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EEPROM EEPROM 641

EEPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
M95160-MN6T by STMicroelectronics

M95160-MN6T

STMicroelectronics

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Position: DUAL;

MINIMUM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

SPI

.00001 Amp

EEPROMs

4 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE/SOFTWARE

M24C02-MN6T by STMicroelectronics

M24C02-MN6T

STMicroelectronics

The STMicroelectronics M24C02-MN6T is an EEPROM with 256x8 organization, I2C control byte 1010DDDR, and 2048-bit memory density. It operates in industrial temperature range (-40 to 85 °C) with a max clock frequency of 0.4 MHz. Ideal for applications requiring serial communication and write protection features.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.9 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24C04-MN6T by STMicroelectronics

M24C04-MN6T

STMicroelectronics

STMicroelectronics' M24C04-MN6T is an EEPROM with 512x8 organization, operating at 5V. It features I2C control byte 1010DDMR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage with a small footprint.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e0

4.9 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24C04-MN6 by STMicroelectronics

M24C04-MN6

STMicroelectronics

STMicroelectronics' M24C04-MN6 is a 4096-bit EEPROM with 512x8 organization, operating at 5V. It features I2C control byte for synchronous operation and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory in a small outline package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e0

4.9 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M95256-WBN6 by STMicroelectronics

M95256-WBN6

STMicroelectronics

M95256-WBN6 by STMicroelectronics is a 32Kx8 EEPROM with SPI serial bus, 262144-bit memory density, and 100000 write/erase cycles. It operates at a max clock frequency of 5 MHz and has a temperature range of -40 to 85°C. Ideal for industrial applications requiring reliable non-volatile memory storage.

100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

5 MHz

40

100000 Write/Erase Cycles

R-PDIP-T8

e0

9.27 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

SPI

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

3.3

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

M95128-WMN6T by STMicroelectronics

M95128-WMN6T

STMicroelectronics

M95128-WMN6T by STMicroelectronics is a 16KX8 EEPROM with SPI serial bus, 131072 bit memory density, and 100000 write/erase cycles. It operates at -40 to 85 °C with a clock frequency of up to 5 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage.

100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

5 MHz

40

100000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

131072 bit

EEPROM

8

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

SPI

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

25LC512-M/SN by Microchip Technology

25LC512-M/SN

Microchip Technology

25LC512-M/SN by Microchip is a serial EEPROM with 64KX8 organization, operating at up to 10 MHz. It has a MILITARY temperature grade and offers 1000000 Write/Erase cycles. Ideal for applications requiring reliable non-volatile memory in harsh environments.

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

524288 bit

EEPROM

8

1

1

1

8

65536 words

64K

SYNCHRONOUS

125 Cel

-55 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

TS 16949

1.75 mm

SPI

.00002 Amp

10 mA

5.5 V

2.5 V

5

YES

CMOS

MILITARY

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

25LC512T-M/SN by Microchip Technology

25LC512T-M/SN

Microchip Technology

25LC512T-M/SN by Microchip Technology is a 64KX8 EEPROM with SPI serial bus type, operating at 5V. It offers 1000000 write/erase cycles, -55 to 125 °C temperature range, and synchronous operation. Ideal for applications requiring small outline package style and high endurance memory.

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

524288 bit

EEPROM

8

3

1

1

8

65536 words

64K

SYNCHRONOUS

125 Cel

-55 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

5

TS 16949

1.75 mm

SPI

.00002 Amp

10 mA

5.5 V

2.5 V

5

YES

CMOS

MILITARY

MATTE TIN

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

AT28BV256-20SC by Atmel

AT28BV256-20SC

Atmel

AT28BV256-20SC by Atmel is a 32Kx8 EEPROM with 262144-bit memory density. It operates at 3V, has a max access time of 200ns, and supports asynchronous mode. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

200 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDSO-G28

e0

17.9 mm

262144 bit

EEPROM

8

2

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.4

RECTANGULAR

SMALL OUTLINE

64

PARALLEL

240

3/3.3

3

Not Qualified

2.65 mm

.00002 Amp

EEPROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

YES

7.5 mm

10 ms

AT28BV256-20SI by Atmel

AT28BV256-20SI

Atmel

Atmel's AT28BV256-20SI is a 32Kx8 EEPROM with 3V nominal voltage, operating in industrial temperature range. It offers 10,000 write/erase cycles, 200ns access time, and supports hardware/software write protection. Ideal for applications requiring reliable non-volatile memory storage in compact designs.

200 ns

AUTOMATIC WRITE

NO

YES

10

10000 Write/Erase Cycles

R-PDSO-G28

e0

17.9 mm

262144 bit

EEPROM

8

2

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.4

RECTANGULAR

SMALL OUTLINE

64

PARALLEL

240

3/3.3

3

Not Qualified

2.65 mm

.00005 Amp

EEPROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

YES

7.5 mm

10 ms

HARDWARE/SOFTWARE

AT28BV256-20TI by Atmel

AT28BV256-20TI

Atmel

AT28BV256-20TI by Atmel is a 32Kx8 EEPROM with 262144-bit memory density. It operates at 3V, has a max access time of 200ns, and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factors.

200 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDSO-G28

e0

11.8 mm

262144 bit

EEPROM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

64

PARALLEL

240

3/3.3

3

Not Qualified

1.2 mm

.00005 Amp

EEPROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.55 mm

DUAL

YES

8 mm

10 ms

FM93CS56LN by Fairchild Semiconductor

FM93CS56LN

Fairchild Semiconductor

FM93CS56LN by Fairchild Semiconductor is a 2048-bit EEPROM with 128x16 organization. It operates at 0.25 MHz clock frequency and has a max write cycle time of 15 ms. Suitable for applications requiring low power consumption and reliable non-volatile memory storage.

.25 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e0

9.817 mm

2048 bit

EEPROM

16

1

8

128 words

128

SYNCHRONOUS

70 Cel

0 Cel

128X16

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.08 mm

MICROWIRE

.00001 Amp

EEPROMs

1 mA

5.5 V

2.7 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

15 ms

HARDWARE/SOFTWARE

M34C02-LDW6T by STMicroelectronics

M34C02-LDW6T

STMicroelectronics

M34C02-LDW6T by STMicroelectronics is a compact EEPROM with a 256x8 organization, operating at 2.5V to 5.5V and featuring I2C control for easy integration. It supports up to 1M write/erase cycles and operates in temperatures from -40 °C to 85°C. Ideal for industrial applications requiring reliable data retention and low power consumption.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.4 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2.5/5

Not Qualified

1.2 mm

I2C

.0000005 Amp

EEPROMs

2 mA

5.5 V

2.2 V

2.5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.65 mm

DUAL

3 mm

10 ms

HARDWARE/SOFTWARE

24AA128-I/SM by Microchip Technology

24AA128-I/SM

Microchip Technology

24AA128-I/SM by Microchip Technology is an EEPROM with 16KX8 organization, I2C serial bus type, and 1000000 Write/Erase Cycles endurance. It operates at a max clock frequency of 0.4 MHz and is ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.26 mm

131072 bit

EEPROM

8

1

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

2.03 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

24AA64T-I/SM by Microchip Technology

24AA64T-I/SM

Microchip Technology

24AA64T-I/SM by Microchip Tech is an EEPROM with 8KX8 organization, 65536-bit memory density, and 1000000 write/erase cycles. It operates at -40 to 85 °C, has a max clock frequency of 0.4 MHz, and uses I2C serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage.

DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.245 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

4.5

Not Qualified

AEC-Q100

2.03 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

24LC64-E/SM by Microchip Technology

24LC64-E/SM

Microchip Technology

24LC64-E/SM by Microchip Technology is an EEPROM with 8KX8 organization, operating at 4.5V and -40 to 125 °C temperature range. It features I2C control byte 1010DDDR, offers 1000000 Write/Erase cycles endurance, and is ideal for automotive applications due to AEC-Q100 screening level.

DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.245 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

4.5

Not Qualified

AEC-Q100

2.03 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

24LC64T-E/SM by Microchip Technology

24LC64T-E/SM

Microchip Technology

24LC64T-E/SM by Microchip Technology is an EEPROM with 8KX8 organization, 65536 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates in synchronous mode at a max clock frequency of 0.4 MHz and is ideal for automotive applications requiring reliable non-volatile memory storage.

DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.245 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

4.5

Not Qualified

AEC-Q100

2.03 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

M24128-BWDW6T by STMicroelectronics

M24128-BWDW6T

STMicroelectronics

M24128-BWDW6T by STMicroelectronics is a 16Kx8 EEPROM with a synchronous operating mode and I2C interface. It features a wide supply voltage range (2.5V-5.5V), operates in -40 °C to 85°C, and supports 1M write/erase cycles, ideal for industrial applications. Its compact SOIC package ensures efficient space utilization in electronic designs.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.4 mm

131072 bit

EEPROM

8

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

3/5

Not Qualified

1.2 mm

I2C

.000005 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

M24128-BWMN6 by STMicroelectronics

M24128-BWMN6

STMicroelectronics

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Power Supplies (V): 3/5;

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.9 mm

131072 bit

EEPROM

8

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24256-BWMN6T by STMicroelectronics

M24256-BWMN6T

STMicroelectronics

M24256-BWMN6T by STMicroelectronics is a 32Kx8 EEPROM with I2C interface, ideal for industrial applications. It operates at 2.5-5.5V and supports up to 100k write/erase cycles, ensuring reliability in harsh environments. Its compact SOIC package allows easy surface mounting.

.4 MHz

40

100000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.9 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M34D64-WMN6T by STMicroelectronics

M34D64-WMN6T

STMicroelectronics

M34D64-WMN6T by STMicroelectronics is an 8KX8 EEPROM with a memory density of 65536 bit. It operates at a max clock frequency of 0.4 MHz and has an endurance of 1000000 Write/Erase Cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE

M95020-MN6 by STMicroelectronics

M95020-MN6

STMicroelectronics

M95020-MN6 by STMicroelectronics is an EEPROM with 256x8 organization, operating at 5V. It features a max clock frequency of 10MHz and SPI serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage.

10 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

2048 bit

EEPROM

8

1

8

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

SPI

.000002 Amp

EEPROMs

5 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

M95040-WMN6 by STMicroelectronics

M95040-WMN6

STMicroelectronics

M95040-WMN6 by STMicroelectronics is a 4096-bit EEPROM with 512x8 organization, operating at 5 MHz clock frequency. It features hardware/software write protection and SPI serial bus type, suitable for industrial applications requiring reliable non-volatile memory storage. With a small outline package style and low standby current of 0.000002 Amp, it offers endurance of 1,000,000 Write/Erase cycles.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

4096 bit

EEPROM

8

1

8

512 words

512

ASYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

24LC16B-E/ST by Microchip Technology

24LC16B-E/ST

Microchip Technology

24LC16B-E/ST by Microchip Tech is a 2Kx8 EEPROM with 1000000 Write/Erase Cycles. Operating at -40 to 125 °C, it has a Serial I2C interface and supports up to 0.4 MHz clock frequency. Ideal for automotive applications due to AEC-Q100 screening level.

.4 MHz

200

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G8

e3

4.4 mm

16384 bit

EEPROM

8

1

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

5

Not Qualified

AEC-Q100

1.2 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

24LC64XT-E/ST by Microchip Technology

24LC64XT-E/ST

Microchip Technology

24LC64XT-E/ST by Microchip Tech is an EEPROM with 8KX8 organization, 65536-bit memory density, and 1000000 write/erase cycles. Operating in automotive grade at -40 to 125 °C, it uses I2C serial bus for applications requiring reliable non-volatile memory storage.

DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.4 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

4.5

Not Qualified

AEC-Q100

1.2 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

M24128S-FCU6T/T by STMicroelectronics

M24128S-FCU6T/T

STMicroelectronics

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 4; Package Code: VFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

1 MHz

S-PBGA-B4

.833 mm

131072 bit

EEPROM

8

1

4

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

.3 mm

I2C

5.5 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.4 mm

BOTTOM

NOT SPECIFIED

.833 mm

5 ms

M24256-BWMW6T by STMicroelectronics

M24256-BWMW6T

STMicroelectronics

M24256-BWMW6T by STMicroelectronics is a 32KX8 EEPROM with synchronous operation and I2C control byte. It has 262144 bit memory density, 100000 write/erase cycles endurance, and operates at -40 to 85 °C. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

40

100000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

5.3 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

2.03 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

5.25 mm

5 ms

HARDWARE

24VL014/SN by Microchip Technology

24VL014/SN

Microchip Technology

24VL014/SN by Microchip Tech is an EEPROM with 128x8 organization, operating at 2.5V, and featuring I2C control byte 1010DDDR. It has a max clock frequency of 0.4 MHz and is ideal for applications requiring low power consumption and small footprint in automotive electronics.

1.5V TO 1.8V @ 0.1MHz

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

1024 bit

EEPROM

8

1

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-20 Cel

128X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8/3.3

2.5

Not Qualified

TS 16949

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

3.6 V

1.8 V

2.5

YES

CMOS

OTHER

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

M95M01-RMW6G by STMicroelectronics

M95M01-RMW6G

STMicroelectronics

M95M01-RMW6G by STMicroelectronics is an EEPROM with 128KX8 organization, SPI serial bus type, and 1.27 mm terminal pitch. It operates at a max clock frequency of 5 MHz and has a memory density of 1048576 bit. Ideal for industrial applications requiring reliable non-volatile memory storage.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e3

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

2.5 mm

SPI

.000003 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

30

5.62 mm

5 ms

HARDWARE/SOFTWARE

M95M01-RMW6TG by STMicroelectronics

M95M01-RMW6TG

STMicroelectronics

M95M01-RMW6TG by STMicroelectronics is an EEPROM with 128KX8 organization, SPI serial bus type, and 1000000 write/erase cycles endurance. It operates at a max clock frequency of 5 MHz and has a memory density of 1048576 bit. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e3

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

2.5 mm

SPI

.000003 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

5.62 mm

5 ms

HARDWARE/SOFTWARE

M24C32-WBN6P by STMicroelectronics

M24C32-WBN6P

STMicroelectronics

STMicroelectronics M24C32-WBN6P is an EEPROM with 4Kx8 organization, operating at 2.7V, and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz and is suitable for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.27 mm

32768 bit

EEPROM

8

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

AEC-Q100

5.33 mm

I2C

.000002 Amp

EEPROMs

5 mA

5.5 V

2.5 V

2.7

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

DS28E04S-100 by Maxim Integrated

DS28E04S-100

Maxim Integrated

DS28E04S-100 by Maxim Integrated is a 4Kx1 EEPROM with 50000 cycles endurance. Operating at 3V, it supports parallel/serial modes and uses a 1-Wire serial bus. Ideal for industrial applications requiring reliable non-volatile memory in a small outline package.

50000 Write/Erase Cycles

R-PDSO-G16

e0

9.9 mm

4096 bit

EEPROM

1

1

16

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX1

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

3/5

Not Qualified

1.75 mm

1-WIRE

EEPROMs

5.25 V

2.8 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

24LC024-I/STG by Microchip Technology

24LC024-I/STG

Microchip Technology

24LC024-I/STG by Microchip Tech is an EEPROM with 256x8 organization, operating at 4.5V. It has a max clock frequency of 0.4 MHz and can endure 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.4 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

24LC04B-I/SNG by Microchip Technology

24LC04B-I/SNG

Microchip Technology

24LC04B-I/SNG by Microchip Technology is a 4096-bit EEPROM with 512x8 organization, operating at 5V. It features I2C control byte, hardware write protection, and endurance of 1M cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factor.

.4 MHz

200

1000000 Write/Erase Cycles

1010XXMR

R-PDSO-G8

e3

4.9 mm

4096 bit

EEPROM

8

3

1

1

5

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

TS 16949

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

24LC04BT-E/SNG by Microchip Technology

24LC04BT-E/SNG

Microchip Technology

24LC04BT-E/SNG by Microchip Technology is a 512x8 EEPROM with I2C control byte. Operating at 5V, it offers 1000000 write/erase cycles and endurance of 200s. Ideal for automotive applications due to its TS16949 screening level and -40 to 125°C temperature range.

.4 MHz

200

1000000 Write/Erase Cycles

1010XXMR

R-PDSO-G8

e3

4.9 mm

4096 bit

EEPROM

8

3

1

1

5

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

TS 16949

1.75 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

M24C32-FDW5TP by STMicroelectronics

M24C32-FDW5TP

STMicroelectronics

M24C32-FDW5TP by STMicroelectronics is a 32Kb EEPROM with I2C interface, ideal for automotive applications due to its AEC-Q100 screening. It operates at 1.8-5.5V and features a max clock frequency of 400kHz, ensuring efficient data handling. With a robust endurance of 1M write/erase cycles, it's perfect for reliable memory storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.4 mm

32768 bit

EEPROM

8

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-20 Cel

4KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

1.8/5

Not Qualified

AEC-Q100

1.2 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

M24C64-FDW5TP by STMicroelectronics

M24C64-FDW5TP

STMicroelectronics

M24C64-FDW5TP by STMicroelectronics is a 64Kb EEPROM with I2C interface, ideal for low-power applications. It operates at 1.8-5.5V, features a max clock frequency of 400kHz, and supports up to 1M write/erase cycles. Its compact design suits space-constrained devices.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.4 mm

65536 bit

EEPROM

8

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-20 Cel

8KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

1.8/5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

24AA128-I/SNG by Microchip Technology

24AA128-I/SNG

Microchip Technology

24AA128-I/SNG by Microchip Technology is an EEPROM with 16KX8 organization, I2C control byte of 1010DDDR, and max clock frequency of 0.4 MHz. It is used in industrial applications for storing data securely with features like hardware write protection and endurance of 1000000 Write/Erase Cycles.

1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

131072 bit

EEPROM

8

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

24AA64T-I/SNG by Microchip Technology

24AA64T-I/SNG

Microchip Technology

24AA64T-I/SNG by Microchip Technology is an 8KX8 EEPROM with I2C control byte. Operating at 2.5V, it offers 1000000 write/erase cycles and has a memory density of 65536 bits. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

65536 bit

EEPROM

8

3

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

24LC128-I/PG by Microchip Technology

24LC128-I/PG

Microchip Technology

24LC128-I/PG by Microchip Technology is a CMOS EEPROM with a memory density of 131072 bits. It operates in synchronous mode and has a max clock frequency of 0.4 MHz. This EEPROM is commonly used for industrial applications requiring reliable data storage and retrieval.

1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.271 mm

131072 bit

EEPROM

8

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.334 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

24LC128-I/SNG by Microchip Technology

24LC128-I/SNG

Microchip Technology

24LC128-I/SNG by Microchip Technology is an EEPROM with 16Kx8 organization, operating at 4.5V and 0.4MHz clock frequency. It offers hardware write protection, industrial temperature grade, and 1000000 write/erase cycles. Ideal for applications requiring reliable non-volatile memory storage in compact designs with I2C serial bus interface.

1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

131072 bit

EEPROM

8

3

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

24LC128T-I/SMG by Microchip Technology

24LC128T-I/SMG

Microchip Technology

24LC128T-I/SMG by Microchip Technology is a 16KX8 EEPROM with I2C control byte. Operating at 4.5V, it offers 1000000 write/erase cycles and -40 to 85°C temperature range. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.26 mm

131072 bit

EEPROM

8

1

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

4.5

Not Qualified

TS 16949

2.03 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

24LC16BT-I/OTG by Microchip Technology

24LC16BT-I/OTG

Microchip Technology

24LC16BT-I/OTG by Microchip Technology is a 2Kx8 EEPROM with I2C serial bus, 1000000 write/erase cycles, and 5 ms max write cycle time. It operates at -40 to 85 °C for industrial applications requiring reliable non-volatile memory storage. The small outline package with dual terminal position and hardware write protection makes it suitable for space-constrained designs.

1 MILLION ERASE/WRITE CYCLES

.4 MHz

200

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G5

e3

2.95 mm

16384 bit

EEPROM

8

1

1

5

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

LSSOP

TSOP5/6,.11,37

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

SERIAL

260

2/5

Not Qualified

1.45 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.95 mm

DUAL

1.63 mm

5 ms

HARDWARE

24LC256T-I/SNG by Microchip Technology

24LC256T-I/SNG

Microchip Technology

24LC256T-I/SNG by Microchip Tech is a 32Kx8 EEPROM with I2C control byte. Operating at 3/5V, it offers 1000000 write/erase cycles and -40 to 85°C temp range. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

262144 bit

EEPROM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

NO

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

24LC32AT-I/SNG by Microchip Technology

24LC32AT-I/SNG

Microchip Technology

24LC32AT-I/SNG by Microchip Technology is a small outline EEPROM with 4Kx8 organization, operating at 5V. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

32768 bit

EEPROM

8

1

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

24LC512-I/PG by Microchip Technology

24LC512-I/PG

Microchip Technology

24LC512-I/PG by Microchip Technology is an EEPROM with 64KX8 organization, operating at 0.4 MHz clock frequency. It has a memory density of 524288 bit and can endure up to 1000000 Write/Erase cycles. Ideal for industrial applications requiring reliable data storage with I2C serial bus communication.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.271 mm

524288 bit

EEPROM

8

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.334 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

24LC512T-I/SMG by Microchip Technology

24LC512T-I/SMG

Microchip Technology

24LC512T-I/SMG by Microchip Technology is an EEPROM with 64KX8 organization, 524288 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates in SERIAL mode via I2C bus, suitable for industrial applications requiring reliable non-volatile memory storage. With a small outline package style and low standby current of 0.000001 Amp, it offers secure hardware write protection and a wide operating temperature range from -40 to 85 °C.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.245 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

2.03 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

5.23 mm

5 ms

HARDWARE

M95020-RMB6TG by STMicroelectronics

M95020-RMB6TG

STMicroelectronics

M95020-RMB6TG by STMicroelectronics is a compact EEPROM with a 256x8 organization, operating at 2.5V and supporting SPI communication. It features a max clock frequency of 5 MHz and offers hardware/software write protection. Ideal for industrial applications, it withstands temperatures from -40 °C to 85 °C.

5 MHz

40

1000000 Write/Erase Cycles

R-XDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

UNSPECIFIED

VSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.6 mm

SPI

.000001 Amp

EEPROMs

2 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE/SOFTWARE