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VARIABLE CAPACITANCE DIODE Varactor Diodes 155

Varactor Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Diode Cap Tolerance Minimum Diode Capacitance Ratio Nominal Diode Capacitance Diode Element Material Diode Type Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Minimum Quality Factor Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Variable Capacitance Diode Classification
BB179,135 by NXP Semiconductors

BB179,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

SINGLE

8.45

19.74 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

35 V

Varactors

YES

TIN

FLAT

DUAL

BB179B,115 by NXP Semiconductors

BB179B,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

4.66 %

8.45

19.11 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

35 V

Varactors

YES

TIN

FLAT

DUAL

BB182,115 by NXP Semiconductors

BB182,115

NXP Semiconductors

BB182,115 by NXP Semiconductors is a varactor diode with a capacitance ratio of 20.6 and breakdown voltage of 32V. It operates in the very high frequency band, suitable for applications requiring variable capacitance like tuning circuits. This single-configured diode comes in a small outline package with dual terminals and can withstand temperatures from -55 to 125°C.

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

8.77 %

20.6

57 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

35 V

Varactors

YES

TIN

FLAT

DUAL

BB187,115 by NXP Semiconductors

BB187,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

11

29.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

35 V

Varactors

YES

TIN

FLAT

DUAL

BB200,215 by NXP Semiconductors

BB200,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

18 V

COMMON CATHODE, 2 ELEMENTS

6 %

5

70 pF

SILICON

VARIABLE CAPACITANCE DIODE

TO-236AB

R-PDSO-G3

e3

2

3

85 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

TIN

GULL WING

DUAL

BB804,215 by NXP Semiconductors

BB804,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

18 V

COMMON CATHODE, 2 ELEMENTS

5.08 %

1.65

44.25 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

18 V

.02 uA

16 V

Varactors

YES

MATTE TIN

GULL WING

DUAL

BBY31,215 by NXP Semiconductors

BBY31,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

30 V

SINGLE

11.11 %

16.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G3

e3

1

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

.01 uA

28 V

YES

TIN

GULL WING

DUAL

NOT SPECIFIED

BB208-03,135 by NXP Semiconductors

BB208-03,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

3.7

10.1 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

TIN

GULL WING

DUAL

30

BB208-03,115 by NXP Semiconductors

BB208-03,115

NXP Semiconductors

BB208-03,115 by NXP Semiconductors is a varactor diode with a capacitance ratio of 3.7 and a max reverse voltage of 10V. It operates b/w -55°C to 125°C, has a nominal capacitance of 10.1pF, and is designed for applications requiring variable capacitance diodes in small outline packages.

SINGLE

3.7

10.1 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

TIN

GULL WING

DUAL

30

BB208-02,135 by NXP Semiconductors

BB208-02,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

3.7

10.1 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

TIN

FLAT

DUAL

30

BB207,235 by NXP Semiconductors

BB207,235

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON CATHODE, 2 ELEMENTS

6.17 %

2.6

81 pF

SILICON

VARIABLE CAPACITANCE DIODE

TO-236AB

R-PDSO-G3

e3

1

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

15 V

Varactors

YES

TIN

GULL WING

DUAL

30

BB202LX,315 by NXP Semiconductors

BB202LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

8.59 %

2.5

30.85 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PBCC-N2

e3

1

2

85 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

Not Qualified

6 V

Varactors

YES

TIN

NO LEAD

BOTTOM

BB184,135 by NXP Semiconductors

BB184,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 5 DIODES ARE AVAILABLE

13 V

SINGLE

9.29 %

6

14 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

13 V

Varactors

YES

TIN

FLAT

DUAL

BB184,115 by NXP Semiconductors

BB184,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 5 DIODES ARE AVAILABLE

13 V

SINGLE

9.29 %

6

14 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

13 V

Varactors

YES

TIN

FLAT

DUAL

BB179LX,315 by NXP Semiconductors

BB179LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

7.848 %

8.45

19.75 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-N2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

30 V

Varactors

YES

TIN

NO LEAD

DUAL

BB178LX,315 by NXP Semiconductors

BB178LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

10 %

13.5

38.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PBCC-N2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

Not Qualified

32 V

Varactors

YES

TIN

NO LEAD

BOTTOM

MMBV109LT1G by Onsemi

MMBV109LT1G

Onsemi

MMBV109LT1G by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and breakdown voltage of 30 V. It is ideal for very high frequency applications due to its hyperabrupt variable capacitance diode classification and small outline package style.

HIGH RELIABILITY

30 V

SINGLE

10.34 %

5

29 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

200

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

HYPERABRUPT

MMBV409LT1G by Onsemi

MMBV409LT1G

Onsemi

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH Q, HIGH RELIABILITY

20 V

SINGLE

10.34 %

1.5

29 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

200

20 V

Varactors

YES

TIN

GULL WING

DUAL

30

HYPERABRUPT

MMBV105GLT1G by Onsemi

MMBV105GLT1G

Onsemi

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH RELIABILITY

30 V

SINGLE

30.23 %

4

2.15 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

250

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

HYPERABRUPT

MMBV3102LT1G by Onsemi

MMBV3102LT1G

Onsemi

MMBV3102LT1G by Onsemi is a single hyperabrupt varactor diode with 22pF nominal capacitance, suitable for very high frequency applications. It has a min breakdown voltage of 30V and operates at a max temperature of 125 °C. This small outline diode in gull wing terminal form is surface mountable and has a power dissipation of 0.225W.

HIGH Q, HIGH RELIABILITY

30 V

SINGLE

11.1 %

4.5

22 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

200

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

HYPERABRUPT

MMBV809LT1G by Onsemi

MMBV809LT1G

Onsemi

MMBV809LT1G by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 75 and nominal capacitance of 5.3 pF. It operates in the ultra high frequency band, suitable for applications requiring variable capacitance such as RF tuning circuits.

HIGH RELIABILITY

20 V

SINGLE

15.09 %

1.8

5.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

75

20 V

Varactors

YES

TIN

GULL WING

DUAL

30

HYPERABRUPT

SMV1763-079LF by Skyworks Solutions

SMV1763-079LF

Skyworks Solutions

SMV1763-079LF by Skyworks Solutions is a single hyperabrupt varactor diode with 6.7pF capacitance, suitable for S band applications. It features a small outline package, matte tin finish, and 10V breakdown voltage, making it ideal for high-frequency circuit designs.

LOW NOISE

10 V

SINGLE

7.46 %

2.3

6.7 pF

SILICON

VARIABLE CAPACITANCE DIODE

S BAND

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

Varactors

YES

Matte Tin (Sn)

FLAT

DUAL

40

HYPERABRUPT

BBY66-02VE6327 by Infineon Technologies

BBY66-02VE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 68.7 pF;

68.7 pF

VARIABLE CAPACITANCE DIODE

1

260

Varactors

YES

MMBV609LT1G by Onsemi

MMBV609LT1G

Onsemi

MMBV609LT1G by Onsemi is a Varactor Diode with 29pF nominal capacitance, 20V breakdown voltage, and 250 min quality factor. It is ideal for Very High Frequency applications due to its Hyperabrupt diode classification and common cathode configuration. The diode's small outline package and gull wing terminal form make it suitable for surface mount designs requiring high-frequency performance.

HIGH Q

20 V

COMMON CATHODE, 2 ELEMENTS

10.34 %

1.8

29 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

2

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

250

20 V

Varactors

YES

TIN

GULL WING

DUAL

30

HYPERABRUPT

BBY51-02LE6327 by Infineon Technologies

BBY51-02LE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

7 V

SINGLE

6.48 %

1.55

5.4 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-XBCC-N2

e3

1

2

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

7 V

Varactors

YES

MATTE TIN

NO LEAD

BOTTOM

HYPERABRUPT

BBY51-02WE6327 by Infineon Technologies

BBY51-02WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

7 V

SINGLE

6.48 %

1.55

5.4 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

7 V

Varactors

YES

MATTE TIN

FLAT

DUAL

HYPERABRUPT

BBY55-02VE6327 by Infineon Technologies

BBY55-02VE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

16 V

SINGLE

5.66 %

2

18.6 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

16 V

Varactors

YES

MATTE TIN

FLAT

DUAL

HYPERABRUPT

BBY55-02WE6327 by Infineon Technologies

BBY55-02WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

16 V

SINGLE

5.66 %

2

18.6 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

16 V

Varactors

YES

MATTE TIN

FLAT

DUAL

HYPERABRUPT

BBY59-02VE6327 by Infineon Technologies

BBY59-02VE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

15 V

SINGLE

4.32 %

3.4

27.8 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

15 V

Varactors

YES

MATTE TIN

FLAT

DUAL

HYPERABRUPT

BBY65-02VE6327 by Infineon Technologies

BBY65-02VE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

15 V

SINGLE

4.41 %

10

29.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

15 V

Varactors

YES

MATTE TIN

FLAT

DUAL

HYPERABRUPT

MMBV109LT3G by Onsemi

MMBV109LT3G

Onsemi

MMBV109LT3G by Onsemi is a Varactor Diode with a Min Quality Factor of 200, Nominal Capacitance of 29 pF, and Breakdown Voltage of 30 V. Ideal for Very High Frequency applications due to its Variable Capacitance nature and small outline package style.

HIGH RELIABILITY

30 V

SINGLE

10.34 %

5

29 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

200

30 V

Varactors

YES

TIN

GULL WING

DUAL

MMBV2101LT1G by Onsemi

MMBV2101LT1G

Onsemi

MMBV2101LT1G by Onsemi is a Varactor Diode with 6.8pF capacitance, 30V breakdown voltage, and 450 min quality factor. Ideal for high frequency to ultra-high frequency applications due to its abrupt variable capacitance diode classification. It comes in a small outline package with gull wing terminals for surface mount assembly.

HIGH Q, HIGH RELIABILITY

30 V

SINGLE

10 %

2.5

6.8 pF

SILICON

VARIABLE CAPACITANCE DIODE

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

450

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

ABRUPT

MMBV2107LT1G by Onsemi

MMBV2107LT1G

Onsemi

MMBV2107LT1G by Onsemi is a varactor diode with a min quality factor of 350, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 22 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations.

HIGH Q, HIGH RELIABILITY

30 V

SINGLE

10 %

2.5

22 pF

SILICON

VARIABLE CAPACITANCE DIODE

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

350

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

ABRUPT

MMBV2108LT1G by Onsemi

MMBV2108LT1G

Onsemi

MMBV2108LT1G by Onsemi is a varactor diode with a min quality factor of 300, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 27 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations.

HIGH Q, HIGH RELIABILITY

30 V

SINGLE

10 %

2.5

27 pF

SILICON

VARIABLE CAPACITANCE DIODE

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

300

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

ABRUPT

MMBV432LT1G by Onsemi

MMBV432LT1G

Onsemi

MMBV432LT1G by Onsemi is a varactor diode with common cathode, 2 elements configuration. It has a min quality factor of 100 and nominal capacitance of 45.55 pF, suitable for very high frequency applications like RF tuning circuits.

HIGH Q, 1% MATCHING GUARANTEED

14 V

COMMON CATHODE, 2 ELEMENTS

5.6 %

1.5

45.55 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

2

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

100

14 V

Varactors

YES

TIN

GULL WING

DUAL

30

ABRUPT

MMBV809LT3G by Onsemi

MMBV809LT3G

Onsemi

MMBV809LT3G by Onsemi is a varactor diode with a min quality factor of 75, ideal for ultra high frequency applications. It features a nominal capacitance of 5.3 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations. The diode's hyperabrupt variable capacitance classification and gull wing terminal form enhance its performance in high-frequency circuits.

HIGH RELIABILITY

20 V

SINGLE

15.09 %

1.8

5.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

75

20 V

Varactors

YES

TIN

GULL WING

DUAL

HYPERABRUPT

MMVL109T1G by Onsemi

MMVL109T1G

Onsemi

MMVL109T1G by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and breakdown voltage of 30 V. It is designed for very high frequency applications in small outline packages, suitable for surface mount assembly.

HIGH RELIABILITY

30 V

SINGLE

10.34 %

5

29 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

200

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

MMVL3102T1G by Onsemi

MMVL3102T1G

Onsemi

MMVL3102T1G by Onsemi is a varactor diode with a min quality factor of 200, suitable for very high frequency applications. It has a nominal capacitance of 22 pF and a breakdown voltage of 30 V, making it ideal for small outline packages in surface mount configurations.

HIGH RELIABILITY

30 V

SINGLE

11.11 %

4.5

22 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

200

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

MMVL809T1G by Onsemi

MMVL809T1G

Onsemi

MMVL809T1G by Onsemi is a varactor diode with 5.3pF capacitance, 20V breakdown voltage, and 0.2W power dissipation. Ideal for ultra high frequency applications, it features a small outline package and gull wing terminals for surface mount assembly.

HIGH RELIABILITY

20 V

SINGLE

15.09 %

1.8

5.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

20 V

Varactors

YES

TIN

GULL WING

DUAL

30

MV104RLRAG by Onsemi

MV104RLRAG

Onsemi

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: THROUGH-HOLE; No. of Terminals: 3; Surface Mount: NO; Package Shape: ROUND;

1% MATCHING GUARANTEED

32 V

COMMON CATHODE, 2 ELEMENTS

6.33 %

2.5

39.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

TO-92

O-PBCY-T3

e1

2

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

.28 W

Not Qualified

100

32 V

Varactors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

ABRUPT

MV209G by Onsemi

MV209G

Onsemi

MV209G by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 200, ideal for very high frequency applications. Featuring a nominal capacitance of 29 pF and a breakdown voltage of 30 V, this cylindrical diode in plastic/epoxy package is designed for through-hole mounting with tin silver copper finish.

HIGH RELIABILITY

30 V

SINGLE

10.34 %

5

29 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

TO-226AC

O-PBCY-T2

e1

1

2

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

.2 W

Not Qualified

200

30 V

Varactors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

HYPERABRUPT

MV2101G by Onsemi

MV2101G

Onsemi

MV2101G by Onsemi is a varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode's abrupt variable capacitance classification and through-hole terminal form offer precise control over capacitance ratios in electronic designs.

HIGH Q, HIGH RELIABILITY

30 V

SINGLE

10 %

2.5

6.8 pF

SILICON

VARIABLE CAPACITANCE DIODE

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

TO-92

O-PBCY-T2

e1

1

2

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

.28 W

Not Qualified

450

30 V

Varactors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

ABRUPT

MV2109G by Onsemi

MV2109G

Onsemi

MV2109G by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems.

HIGH Q, HIGH RELIABILITY

30 V

SINGLE

10 %

2.5

33 pF

SILICON

VARIABLE CAPACITANCE DIODE

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

TO-92

O-PBCY-T2

e1

1

2

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

.28 W

Not Qualified

200

30 V

Varactors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

ABRUPT

MV2109RLRAG by Onsemi

MV2109RLRAG

Onsemi

MV2109RLRAG by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems.

HIGH RELIABILITY

30 V

SINGLE

10 %

2.5

33 pF

SILICON

VARIABLE CAPACITANCE DIODE

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

TO-92

O-PBCY-T2

e1

1

2

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

.28 W

Not Qualified

200

30 V

Varactors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

ABRUPT

MMBV2105LT1G by Onsemi

MMBV2105LT1G

Onsemi

MMBV2105LT1G by Onsemi is a varactor diode with a min quality factor of 400, nominal capacitance of 15 pF, and max operating temperature of 150 °C. It is used in applications requiring variable capacitance such as RF tuning circuits.

HIGH Q, HIGH RELIABILITY

30 V

SINGLE

10 %

2.5

15 pF

SILICON

VARIABLE CAPACITANCE DIODE

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

400

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

SMV2023-011LF by Skyworks Solutions

SMV2023-011LF

Skyworks Solutions

SMV2023-011LF by Skyworks Solutions is a single hyperabrupt varactor diode with 4.9 pF capacitance, 22 V breakdown voltage, and 500 min quality factor. It's used in RF applications for frequency tuning due to its small outline package and high capacitance ratio.

LOW NOISE

22 V

SINGLE

10.2 %

4.2

4.9 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

500

22 V

Varactors

YES

Matte Tin (Sn)

GULL WING

DUAL

40

HYPERABRUPT

1SV228(TPH3,F) by Toshiba

1SV228(TPH3,F)

Toshiba

The Toshiba 1SV228(TPH3,F) Varactor Diode features a common cathode configuration with 2 elements, suitable for very high frequency applications. With a max operating temperature of 125°C, it offers a nominal capacitance of 30.5 pF and a min breakdown voltage of 15V, making it ideal for small outline surface mount designs.

15 V

COMMON CATHODE, 2 ELEMENTS

6.56 %

2.1

30.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G3

2

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

YES

GULL WING

DUAL

NOT SPECIFIED

ABRUPT

BBY5305WE6327HTSA1 by Infineon Technologies

BBY5305WE6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

COMMON CATHODE, 2 ELEMENTS

9.43 %

1.8

5.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

DUAL

HYPERABRUPT