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Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.

Transient Suppression Devices

Available Parts 2,400+

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Maximum Breakdown Voltage Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Minimum Diode Capacitance Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Reference Standard Nominal Reference Voltage Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Tolerance Working Test Current
SMF110AT1G by Onsemi

SMF110AT1G

Onsemi

SMF110AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 128.5V breakdown voltage, and 177V clamping voltage. It is used in transient suppression applications due to its unidirectional polarity and silicon diode element material.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

135 V

122 V

128.5 V

177 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

110 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF130AT1G by Onsemi

SMF130AT1G

Onsemi

SMF130AT1G by Onsemi is a Zener diode with 130V peak reverse voltage, 1000W power dissipation, and 151.5V breakdown voltage. Ideal for transient suppression in electronics due to its unidirectional polarity and max clamping voltage of 209V.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

159 V

144 V

151.5 V

209 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

130 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF150AT1G by Onsemi

SMF150AT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

185 V

167 V

176 V

243 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

150 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF160AT1G by Onsemi

SMF160AT1G

Onsemi

SMF160AT1G by Onsemi is a Zener diode with a max power dissipation of 0.385W and a breakdown voltage range of 178-197V, ideal for transient suppression in electronic circuits. With a peak clamping voltage of 259V and unidirectional polarity, it offers protection against voltage spikes during operation. This single-configured device comes in a small outline package suitable for surface mount applications.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

197 V

178 V

187.5 V

259 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

160 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF16AT1G by Onsemi

SMF16AT1G

Onsemi

SMF16AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 18.75V breakdown voltage, and 26V clamping voltage. Ideal for transient suppression in electronic circuits due to its unidirectional polarity and silicon material.

LOW IMPEDANCE, EXCELLENT CLAMPING CAPABILITY

19.7 V

17.8 V

18.75 V

26 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

16 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF170AT1G by Onsemi

SMF170AT1G

Onsemi

SMF170AT1G by Onsemi is a Zener diode with 170V peak reverse voltage, 1000W power dissipation, and 275V clamping voltage. It is used for transient suppression in electronic circuits.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

209 V

189 V

199 V

275 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

170 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF17AT1G by Onsemi

SMF17AT1G

Onsemi

SMF17AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 19.9V breakdown voltage, and 27.6V clamping voltage. It is used in transient suppression applications due to its unidirectional polarity and silicon diode element material, making it suitable for protecting electronic circuits from voltage spikes during operation.

LOW IMPEDANCE, EXCELLENT CLAMPING CAPABILITY

20.9 V

18.9 V

19.9 V

27.6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

17 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF40AT1G by Onsemi

SMF40AT1G

Onsemi

SMF40AT1G by Onsemi is a Zener diode with 40V max repetitive peak reverse voltage, 1000W non-repetitive peak power dissipation, and 64.5V max clamping voltage. Ideal for transient suppression in electronic circuits requiring protection against voltage spikes.

LOW IMPEDANCE, EXCELLENT CLAMPING CAPABILITY

49.1 V

44.4 V

46.8 V

64.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

40 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF43AT1G by Onsemi

SMF43AT1G

Onsemi

SMF43AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 50.3V breakdown voltage, and 69.4V clamping voltage. Ideal for transient suppression in electronic circuits due to its unidirectional polarity and high breakdown voltages.

LOW IMPEDANCE, EXCELLENT CLAMPING CAPABILITY

52.8 V

47.8 V

50.3 V

69.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

43 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF45AT1G by Onsemi

SMF45AT1G

Onsemi

SMF45AT1G by Onsemi is a Zener diode with 45V peak reverse voltage, 1000W power dissipation, and 52.65V breakdown voltage. It is used for transient suppression in applications requiring unidirectional polarity protection and a max clamping voltage of 72.7V.

LOW IMPEDANCE, EXCELLENT CLAMPING CAPABILITY

55.3 V

50 V

52.65 V

72.7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

45 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF54AT1G by Onsemi

SMF54AT1G

Onsemi

SMF54AT1G by Onsemi is a Zener diode with 54V peak reverse voltage, 1000W power dissipation, and 87.1V clamping voltage. It is used for transient suppression in electronic circuits.

LOW IMPEDANCE, EXCELLENT CLAMPING CAPABILITY

66.3 V

60 V

63.15 V

87.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

54 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF60AT1G by Onsemi

SMF60AT1G

Onsemi

SMF60AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 70.2V breakdown voltage, and 96.8V clamping voltage. It is used for transient suppression in applications requiring unidirectional polarity protection in surface-mount configurations.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

73.7 V

66.7 V

70.2 V

96.8 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

60 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF64AT1G by Onsemi

SMF64AT1G

Onsemi

SMF64AT1G by Onsemi is a Zener diode with 64V max repetitive peak reverse voltage, 1000W non-repetitive peak power dissipation, and 103V max clamping voltage. It is used for transient suppression in electronic circuits.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

78.6 V

71.1 V

74.85 V

103 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

64 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF70AT1G by Onsemi

SMF70AT1G

Onsemi

SMF70AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 81.9V breakdown voltage, and 113V clamping voltage. It is used for transient suppression in applications requiring unidirectional polarity protection and a max repetitive peak reverse voltage of 70V.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

86 V

77.8 V

81.9 V

113 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

70 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF75AT1G by Onsemi

SMF75AT1G

Onsemi

SMF75AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 87.7V breakdown voltage, and 121V clamping voltage. It is used for transient suppression in applications requiring unidirectional polarity protection and a max repetitive peak reverse voltage of 75V.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

92.1 V

83.3 V

87.7 V

121 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

75 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF78AT1G by Onsemi

SMF78AT1G

Onsemi

SMF78AT1G by Onsemi is a Zener diode with 78V peak reverse voltage, 1000W power dissipation, and 126V clamping voltage. It is used for transient suppression in electronic circuits.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

95.8 V

86.7 V

91.25 V

126 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

78 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF85AT1G by Onsemi

SMF85AT1G

Onsemi

SMF85AT1G by Onsemi is a Zener diode with 85V peak reverse voltage and 1000W non-repetitive power dissipation. It is a unidirectional transient suppression device in a small outline package, ideal for protecting electronic circuits from voltage spikes in applications like power supplies and communication systems.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

104 V

94.4 V

99.2 V

137 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

85 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF90AT1G by Onsemi

SMF90AT1G

Onsemi

SMF90AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 105.5V breakdown voltage, and 146V clamping voltage. It is used for transient suppression in applications requiring protection against voltage spikes in electronic circuits.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

111 V

100 V

105.5 V

146 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

90 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

CDNBS16-T12C by Bourns

CDNBS16-T12C

Bourns

Bourns CDNBS16-T12C is a Transient Suppression Device with 8 separate elements, each with 500W peak power dissipation. It is a bidirectional Trans Voltage Suppressor Diode operating b/w -55°C to 150°C. Ideal for surge protection in electronics requiring avalanche technology and 12V repetitive peak reverse voltage.

SEPARATE, 8 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G16

e3

1

500 W

8

16

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

BIDIRECTIONAL

Not Qualified

12 V

YES

AVALANCHE

Matte Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

SN65220IDBVRQ1 by Texas Instruments

SN65220IDBVRQ1

Texas Instruments

SN65220IDBVRQ1 by Texas Instruments is a Transient Suppression Device with 6 terminals, operating temperature range of -40 to 85 °C. It features a max power dissipation of 0.385 W and breakdown voltage of 8 V. Ideal for protecting electronic circuits from voltage spikes in various applications.

LOW CAPACITANCE

8 V

6.5 V

COMPLEX

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

MO-178AB

R-PDSO-G6

e4

1

60 W

2

6

85 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

IEC-61000-4-2

6 V

YES

AVALANCHE

NICKEL PALLADIUM GOLD

GULL WING

DUAL

30

SN65240PWRG4 by Texas Instruments

SN65240PWRG4

Texas Instruments

SN65240PWRG4 by Texas Instruments is a Transient Suppression Device with 60W peak power dissipation, 1uA reverse current, and 8V max breakdown voltage. It is used for surge protection in electronic circuits, offering unidirectional polarity and avalanche technology for efficient transient voltage suppression.

LOW CAPACITANCE

8 V

6.5 V

COMPLEX

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

MO-153AA

R-PDSO-G8

e4

1

60 W

2

8

85 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.52 W

Not Qualified

IEC-61000-4-2

6 V

1 uA

YES

AVALANCHE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

NOT SPECIFIED

NSQA12VAW5T2 by Onsemi

NSQA12VAW5T2

Onsemi

NSQA12VAW5T2 by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 4 ELEMENTS in COMMON ANODE config. It has a Breakdown Voltage of 12V and Max Clamping Voltage of 23V. Ideal for transient suppression applications due to its AVALANCHE technology and max power dissipation of 0.38W.

LOW CAPACITANCE, LOW LEAKAGE CURRENT

12.7 V

11.4 V

12 V

23 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G5

e0

20 W

4

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

UNIDIRECTIONAL

.38 W

Not Qualified

5 V

Transient Suppressors

YES

AVALANCHE

Tin/Lead (Sn/Pb)

GULL WING

DUAL

NZQA5V6XV5T3 by Onsemi

NZQA5V6XV5T3

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 5; Surface Mount: YES; Package Shape: RECTANGULAR;

5.88 V

5.32 V

5.6 V

10.5 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F5

e3

100 W

4

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.3 W

Not Qualified

3 V

Transient Suppressors

YES

AVALANCHE

TIN

FLAT

DUAL

SN65220YZBT by Texas Instruments

SN65220YZBT

Texas Instruments

SN65220YZBT by Texas Instruments is a complex transient suppression device with 4 terminals in a square grid array package. It has a max non-repetitive peak reverse power dissipation of 60W and min breakdown voltage of 6.5V. Ideal for protecting electronic circuits from voltage spikes, it features avalanche technology and unidirectional polarity for efficient silicon diode element material usage.

LOW CAPACITANCE

8 V

6.5 V

COMPLEX

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-XBGA-B4

1

60 W

2

4

UNSPECIFIED

SQUARE

GRID ARRAY

260

UNIDIRECTIONAL

.385 W

Not Qualified

6 V

YES

AVALANCHE

BALL

BOTTOM

30

SA180-B by Littelfuse

SA180-B

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EXCELLENT CLAMPING CAPABILITY

238.15 V

194.85 V

216.5 V

ISOLATED

289 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-204AC

O-PALF-W2

e3

1

500 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

260

UNIDIRECTIONAL

3 W

Not Qualified

UL RECOGNIZED

180 V

Transient Suppressors

NO

AVALANCHE

Matte Tin (Sn)

WIRE

AXIAL

30

SA180C-B by Littelfuse

SA180C-B

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EXCELLENT CLAMPING CAPABILITY

238.15 V

194.85 V

216.5 V

ISOLATED

289 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-204AC

O-PALF-W2

e3

1

500 W

1

2

PLASTIC/EPOXY

ROUND

LONG FORM

260

BIDIRECTIONAL

3 W

Not Qualified

UL RECOGNIZED

180 V

Transient Suppressors

NO

AVALANCHE

MATTE TIN

WIRE

AXIAL

40

DFLT6V5A-7 by Diodes Incorporated

DFLT6V5A-7

Diodes Incorporated

DFLT6V5A-7 by Diodes Inc. is a single avalanche diode with 7.6V breakdown voltage, 225W peak power dissipation, and 250uA reverse current. Ideal for transient suppression in electronics, it features a unidirectional polarity and matte tin terminal finish for SMT applications.

EXCELLENT CLAMPING CAPABILITY

7.98 V

7.22 V

7.6 V

CATHODE

11.2 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

225 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

Not Qualified

6.5 V

250 uA

6.5 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

DFLT7V0A-7 by Diodes Incorporated

DFLT7V0A-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

8.6 V

7.78 V

8.19 V

CATHODE

12 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

225 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

Not Qualified

7 V

100 uA

7 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

DFLT9V0A-7 by Diodes Incorporated

DFLT9V0A-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

11.1 V

10 V

10.55 V

CATHODE

15.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

225 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

Not Qualified

9 V

5 uA

9 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

ESDA18-1F2 by STMicroelectronics

ESDA18-1F2

STMicroelectronics

ESDA18-1F2 by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for surface mount applications. It features a max reverse power dissipation of 700 W, breakdown voltage of 17 V, and operates up to 125 °C. Ideal for protecting sensitive electronics from voltage spikes.

18 V

16 V

17 V

SEPARATE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-PBGA-B4

700 W

2

4

125 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

NOT SPECIFIED

UNIDIRECTIONAL

Not Qualified

16 V

Transient Suppressors

YES

AVALANCHE

BALL

BOTTOM

NOT SPECIFIED

MAX3208EAUB by Maxim Integrated

MAX3208EAUB

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 10; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW CAPACITANCE

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

.95 V

MO-187BA

R-PDSO-G10

e0

1

1

10

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

.696 W

Not Qualified

Other Diodes

YES

AVALANCHE

TIN LEAD

GULL WING

DUAL

NUP1105LT3G by Onsemi

NUP1105LT3G

Onsemi

NUP1105LT3G by Onsemi is a Trans Voltage Suppressor Diode with 2 elements, offering bidirectional polarity and a max clamping voltage of 44V. It has a common cathode configuration, small outline package style, and is suitable for transient suppression applications requiring a breakdown voltage range of 25.7V to 28.4V.

28.4 V

25.7 V

27.05 V

44 V

COMMON CATHODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

TO-236AB

R-PDSO-G3

e3

1

350 W

2

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

Not Qualified

24 V

Transient Suppressors

YES

AVALANCHE

Tin (Sn)

GULL WING

DUAL

40

SD12CT1 by Onsemi

SD12CT1

Onsemi

The Onsemi SD12CT1 is a single bidirectional avalanche diode with 12V max repetitive peak reverse voltage and 350W non-repetitive peak power dissipation. It comes in a small outline package suitable for surface mount applications, providing transient suppression for electronic circuits.

13.3 V

19 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G2

e0

1

350 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

BIDIRECTIONAL

Not Qualified

12 V

Transient Suppressors

YES

AVALANCHE

TIN LEAD

GULL WING

DUAL

ESDALC6V1P3 by STMicroelectronics

ESDALC6V1P3

STMicroelectronics

ESDALC6V1P3 by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for surface mount applications. It features a breakdown voltage of 6.65 V, max power dissipation of 30 W, and dual-element configuration. Ideal for protecting sensitive electronics from voltage spikes.

LOW CAPACITANCE, LOW LEAKAGE CURRENT

7.2 V

6.1 V

6.65 V

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F3

e3

1

30 W

2

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

Not Qualified

3 V

Transient Suppressors

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

SMA6J18A-E3/5A by Vishay Intertechnology

SMA6J18A-E3/5A

Vishay Intertechnology

Vishay Intertechnology's SMA6J18A-E3/5A is a unidirectional Trans Voltage Suppressor Diode with 600W peak power dissipation, ideal for transient suppression applications. It features a 21.05V breakdown voltage and 22.1V max breakdown voltage, operating b/w -55°C to 150°C. With a compact rectangular package style and matte tin terminal finish, it is designed for surface mount installation in various electronic devices.

EXCELLENT CLAMPING CAPABILITY

22.1 V

20 V

21.05 V

28.3 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AC

R-PDSO-C2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

4 W

Not Qualified

18 V

Transient Suppressors

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SMA6J18A-E3/61 by Vishay Intertechnology

SMA6J18A-E3/61

Vishay Intertechnology

Vishay Intertechnology's SMA6J18A-E3/61 is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 21.05V Breakdown Voltage, ideal for transient suppression applications. With a UNIDIRECTIONAL polarity and 28.3V Clamping Voltage, it operates b/w -55°C to 150°C, making it suitable for various electronic devices requiring surge protection in compact designs.

EXCELLENT CLAMPING CAPABILITY

22.1 V

20 V

21.05 V

28.3 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AC

R-PDSO-C2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

4 W

Not Qualified

18 V

Transient Suppressors

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

ESDA14V2-4BF3 by STMicroelectronics

ESDA14V2-4BF3

STMicroelectronics

ESDA14V2-4BF3 by STMicroelectronics is a transient suppression device with common anode configuration and 5 elements. It has a max non-repetitive peak reverse power dissipation of 50W, breakdown voltage of 16.1V, and operates at temperatures up to 125°C. Ideal for protecting electronic circuits from electrostatic discharge in various applications.

18 V

14.2 V

16.1 V

COMMON ANODE, 5 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-PBGA-B5

50 W

5

5

125 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

NOT SPECIFIED

BIDIRECTIONAL

Not Qualified

12 V

Transient Suppressors

YES

AVALANCHE

BALL

BOTTOM

NOT SPECIFIED

ESDA6V1M6 by STMicroelectronics

ESDA6V1M6

STMicroelectronics

ESDA6V1M6 by STMicroelectronics is a transient suppression device with 4 common anode elements. It has a max non-repetitive peak reverse power dissipation of 100W and breakdown voltage of 6.65V. Ideal for protecting sensitive electronics from voltage spikes in various applications.

7.2 V

6.1 V

6.65 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-N6

e4

1

100 W

4

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

Not Qualified

Transient Suppressors

YES

AVALANCHE

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

DUAL

30

ESDALC6V1M6 by STMicroelectronics

ESDALC6V1M6

STMicroelectronics

ESDALC6V1M6 by STMicroelectronics is a transient suppression device with 4 common anode elements. It has a max non-repetitive peak reverse power dissipation of 30W and breakdown voltage of 6.65V. Ideal for protecting electronic circuits from electrostatic discharge in various applications.

7.2 V

6.1 V

6.65 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-N6

e4

1

30 W

4

6

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

Not Qualified

Transient Suppressors

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

LNBTVS3-220U by STMicroelectronics

LNBTVS3-220U

STMicroelectronics

LNBTVS3-220U by STMicroelectronics is a unidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 1500 W, breakdown voltage range of 22-24.2 V, and operates up to 150 °C. Perfect for surface mount applications in compact designs.

24.2 V

22 V

23.1 V

35 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

1500 W

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

5 W

Not Qualified

UL RECOGNIZED

20 V

Transient Suppressors

YES

AVALANCHE

Matte Tin (Sn) - annealed

C BEND

DUAL

30

LNBTVS3-220 by STMicroelectronics

LNBTVS3-220

STMicroelectronics

LNBTVS3-220 by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust protection. It features a max reverse power dissipation of 1500 W, breakdown voltage of 23.1 V, and clamping voltage up to 35 V. Ideal for safeguarding sensitive electronics from voltage spikes.

24.2 V

22 V

23.1 V

ISOLATED

35 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-201

O-PALF-W2

e3

1500 W

1

2

PLASTIC/EPOXY

ROUND

LONG FORM

UNIDIRECTIONAL

5 W

Not Qualified

UL RECOGNIZED

20 V

Transient Suppressors

NO

AVALANCHE

MATTE TIN

WIRE

AXIAL

LNBTVS4-220S by STMicroelectronics

LNBTVS4-220S

STMicroelectronics

LNBTVS4-220S by STMicroelectronics is a unidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 1800 W, breakdown voltage range of 22-24.2 V, and operates up to 150 °C. This device is perfect for surface mount applications requiring robust surge protection.

24.2 V

22 V

23.1 V

35 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AB

R-PDSO-C2

e3

1

1800 W

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

5 W

Not Qualified

UL RECOGNIZED

20 V

Transient Suppressors

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

LNBTVS4-220 by STMicroelectronics

LNBTVS4-220

STMicroelectronics

LNBTVS4-220 by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust protection. It features a max reverse power dissipation of 1800 W, breakdown voltage of 23.1 V, and operates effectively in electronic circuits to safeguard against voltage spikes. Its compact round package ensures easy integration into various applications.

24.2 V

22 V

23.1 V

ISOLATED

35 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-201

O-PALF-W2

e3

1800 W

1

2

PLASTIC/EPOXY

ROUND

LONG FORM

UNIDIRECTIONAL

5 W

Not Qualified

UL RECOGNIZED

20 V

Transient Suppressors

NO

AVALANCHE

MATTE TIN

WIRE

AXIAL

LNBTVS4-221S by STMicroelectronics

LNBTVS4-221S

STMicroelectronics

STMicroelectronics' LNBTVS4-221S is a single-config transient suppression device with 2000W peak power dissipation and 23.1V breakdown voltage. Ideal for protecting electronic circuits from voltage spikes, it features a unidirectional diode element made of silicon and operates at temperatures up to 150°C.

24.2 V

22 V

23.1 V

32 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AB

R-PDSO-C2

e3

1

2000 W

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

5 W

Not Qualified

UL RECOGNIZED

20 V

Transient Suppressors

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

LNBTVS4-221 by STMicroelectronics

LNBTVS4-221

STMicroelectronics

LNBTVS4-221 by STMicroelectronics is a unidirectional transient voltage suppressor diode with a max reverse power dissipation of 2000 W and a breakdown voltage of 23.1 V. It features an isolated case connection and is ideal for protecting sensitive electronics from voltage spikes. This device ensures reliable performance in various applications, including automotive and industrial systems.

24.2 V

22 V

23.1 V

ISOLATED

32 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-201

O-PALF-W2

e3

2000 W

1

2

PLASTIC/EPOXY

ROUND

LONG FORM

UNIDIRECTIONAL

5 W

Not Qualified

UL RECOGNIZED

20 V

Transient Suppressors

NO

AVALANCHE

MATTE TIN

WIRE

AXIAL

LNBTVS4-222S by STMicroelectronics

LNBTVS4-222S

STMicroelectronics

STMicroelectronics' LNBTVS4-222S is a single-config transient suppression device with 3000W peak power dissipation and 23.1V breakdown voltage. Ideal for protecting electronic circuits from voltage spikes, it features a unidirectional diode element made of silicon and operates at temperatures up to 150°C.

24.2 V

22 V

23.1 V

30 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AB

R-PDSO-C2

e3

1

3000 W

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

5 W

Not Qualified

UL RECOGNIZED

20 V

Transient Suppressors

YES

AVALANCHE

Matte Tin (Sn) - annealed

C BEND

DUAL

30

LNBTVS6-220S by STMicroelectronics

LNBTVS6-220S

STMicroelectronics

LNBTVS6-220S by STMicroelectronics is a unidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 3000 W, breakdown voltage range of 22-24.2 V, and operates up to 150 °C. Its compact design suits surface mount applications in various electronic devices.

24.2 V

22 V

23.1 V

35 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AB

R-PDSO-C2

e3

1

3000 W

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

5 W

Not Qualified

UL RECOGNIZED

20 V

Transient Suppressors

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

LNBTVS6-221S by STMicroelectronics

LNBTVS6-221S

STMicroelectronics

LNBTVS6-221S by STMicroelectronics is a unidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 3000 W, breakdown voltage range of 22-24.2 V, and operates up to 150 °C. This device is perfect for surface mount applications requiring robust surge protection.

24.2 V

22 V

23.1 V

32 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AB

R-PDSO-C2

e3

1

3000 W

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

5 W

Not Qualified

UL RECOGNIZED

20 V

Transient Suppressors

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30