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NSQA12VAW5T2

Onsemi

NSQA12VAW5T2 by Onsemi

NSQA12VAW5T2 by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 4 ELEMENTS in COMMON ANODE config. It has a Breakdown Voltage of 12V and Max Clamping Voltage of 23V. Ideal for transient suppression applications due to its AVALANCHE technology and max power dissipation of 0.38W.

Median Price

$0.089

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 99,000 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

99,000

-

$0.092

$0.077

$0.068

Verical

USA . 99,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.086

99,000

-

-

-

$0.086

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,098 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

10k+ parts

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1,098

$0.072

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Chip Stock

USA . 58,000 parts In-Stock

1+ parts

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58,000

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-

-

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Vyrian

USA . 7,735 parts In-Stock

1+ parts

-

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7,735

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 675 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

10k+ parts

-

675

$0.068

-

-

-

Corohmni

South Africa . 306 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

10k+ parts

-

306

$0.072

-

-

-

Component Stockers USA

USA . 65,774 parts In-Stock

1+ parts

$0.080

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

$0.070

65,774

$0.080

$0.070

$0.070

$0.070

AZTECH Wire

Italy . 186 parts In-Stock

1+ parts

$16.210

100+ parts

-

1k+ parts

-

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186

$16.210

-

-

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Continental Prestige Electronics

USA . 99,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.065

10k+ parts

-

99,000

-

-

$0.065

-

Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

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100+ parts

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25,000

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SupplyDigital Components

Austria . 4,205 parts In-Stock

1+ parts

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4,205

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TANS Electronics

Latvia . 3,655 parts In-Stock

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3,655

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Problanco Electronics

Mexico . 3,399 parts In-Stock

1+ parts

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3,399

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Kulean Microsystems

USA . 1,732 parts In-Stock

1+ parts

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1,732

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UHIMA Technologies

Türkiye . 389 parts In-Stock

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389

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Overview

Get ready to experience superior protection with the NSQA12VAW5T2 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Transient Suppression Devices designed to safeguard your electronics from voltage spikes and surges. With its common anode configuration and small outline package style, this device is perfect for a wide range of applications. Trust in Onsemi to provide reliable products that offer peace of mind and protection for your valuable electronics. Choose the NSQA12VAW5T2 for unmatched quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the device, making it suitable for various applications.

Config: COMMON ANODE, 4 ELEMENTS

With a common anode configuration and 4 elements, this product offers efficient transient suppression capabilities for enhanced protection.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards, saving space and simplifying assembly processes.

Maximum Non Repetitive Peak Reverse Power Dissipation: 20 W

The high maximum non repetitive peak reverse power dissipation rating ensures that the device can handle sudden high-power surges effectively, increasing reliability.

Nominal Breakdown Voltage: 12 V

The nominal breakdown voltage of 12 V indicates the level at which the device starts conducting, offering protection against overvoltage conditions.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into circuit designs and provides a compact form factor for space-constrained applications.

No. of Terminals: 5

Having 5 terminals enables easy connectivity and ensures proper placement on the circuit board for effective transient suppression.

Package Style: SMALL OUTLINE

The small outline package style makes the device suitable for applications where size and weight are critical factors, offering versatility in design.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and ensures reliable electrical connections, enhancing the overall performance of the device.

Terminal Position: DUAL

The dual terminal position allows for flexibility in circuit board layout and enables easy connection to other components, improving overall system efficiency.

Maximum Power Dissipation: 0.38 W

The low maximum power dissipation indicates efficient energy handling capabilities, reducing the risk of overheating and improving device longevity.

Minimum Breakdown Voltage: 11.4 V

The minimum breakdown voltage ensures reliable operation within a specified range, offering consistent performance under varying voltage conditions.

Peak Reflow Temperature °C: 235

The high peak reflow temperature tolerance of 235 °C allows for safe and effective soldering processes, ensuring proper device installation on circuit boards.

Maximum Breakdown Voltage: 12.7 V

The maximum breakdown voltage indicates the level at which the device reliably conducts, providing protection against voltage spikes and transients.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures effective suppression of transient voltage spikes, safeguarding sensitive electronic components.

Technology: AVALANCHE

The avalanche technology employed in the device enables rapid response to voltage surges, ensuring quick suppression and protection of connected equipment.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical stability and easy soldering during assembly, enhancing the overall reliability of the device.

No. of Elements: 4

Having 4 elements allows for efficient suppression of transient voltage spikes across multiple channels, providing comprehensive protection for electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 5 V

The maximum repetitive peak reverse voltage rating ensures reliable performance under continuous voltage stress, offering long-term protection for connected devices.

Polarity: UNIDIRECTIONAL

The unidirectional polarity of the device ensures that transient voltage spikes are suppressed in one direction only, safeguarding the circuit from reverse surges.

Maximum Clamping Voltage: 23 V

The maximum clamping voltage specification indicates the level at which the device limits voltage spikes, protecting downstream components from damage.

Diode Element Material: SILICON

The use of silicon diode element material provides high efficiency in suppressing transient voltage spikes, offering reliable performance in demanding environments.

Technical Specifications

Transient Suppression Devices NSQA12VAW5T2 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE, LOW LEAKAGE CURRENT

Maximum Breakdown Voltage:

12.7 V

Minimum Breakdown Voltage:

11.4 V

Nominal Breakdown Voltage:

12 V

Maximum Clamping Voltage:

23 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

20 W

No. of Elements:

4

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.38 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Trade Compliance

NSQA12VAW5T2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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