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NSQA6V8AW5T2

Onsemi

NSQA6V8AW5T2 by Onsemi

NSQA6V8AW5T2 by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 4 ELEMENTS in COMMON ANODE config. It has a 6.8V Breakdown Voltage and can handle up to 20W of Max Non Repetitive Peak Reverse Power Dissipation. This device, with a max clamping voltage of 13V, is ideal for transient suppression applications in electronics.

Median Price

$0.089

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 482,422 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

482,422

-

$0.092

$0.077

$0.068

Verical

USA . 389,750 parts In-Stock

1+ parts

-

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-

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10k+ parts

$0.086

389,750

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-

-

$0.086

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,584 parts In-Stock

1+ parts

$0.072

100+ parts

-

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1,584

$0.072

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Chip Stock

USA . 72,500 parts In-Stock

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72,500

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Vyrian

USA . 2,983 parts In-Stock

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2,983

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,456 parts In-Stock

1+ parts

$0.068

100+ parts

-

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1,456

$0.068

-

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Corohmni

South Africa . 166 parts In-Stock

1+ parts

$0.072

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166

$0.072

-

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Component Stockers USA

USA . 513,584 parts In-Stock

1+ parts

$0.080

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

$0.070

513,584

$0.080

$0.070

$0.070

$0.070

AZTECH Wire

Italy . 454 parts In-Stock

1+ parts

$10.140

100+ parts

-

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454

$10.140

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Continental Prestige Electronics

USA . 482,672 parts In-Stock

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$0.065

10k+ parts

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482,672

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$0.065

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Authorized Procurement Solutions

USA . 120,000 parts In-Stock

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120,000

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TANS Electronics

Latvia . 6,507 parts In-Stock

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6,507

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Problanco Electronics

Mexico . 6,366 parts In-Stock

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6,366

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SupplyDigital Components

Austria . 4,832 parts In-Stock

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4,832

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Kulean Microsystems

USA . 4,391 parts In-Stock

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4,391

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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1,800

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Kepictronics

USA . 1,250 parts In-Stock

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1,250

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UHIMA Technologies

Türkiye . 884 parts In-Stock

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884

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Overview

Enhance your electronic devices with the NSQA6V8AW5T2 by Onsemi, a top-of-the-line transient suppression device designed to protect against voltage spikes. Manufactured by Onsemi, a trusted name in the industry, this product offers unparalleled quality and reliability. Ideal for a wide range of applications, this common anode device with 4 elements provides peace of mind by safeguarding your equipment from potential damage. Experience the value and benefits of enhanced protection with the NSQA6V8AW5T2, ensuring optimal performance and longevity for your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the device suitable for various applications while offering protection against transient overvoltages.

Maximum Non Repetitive Peak Reverse Power Dissipation: 20 W

High power dissipation capability ensures the device can withstand sudden high voltage spikes without getting damaged.

Nominal Breakdown Voltage: 6.8 V

The breakdown voltage is within an optimal range for protecting sensitive electronic components against voltage surges.

No. of Terminals: 5

Having more terminals allows for better connectivity and potentially more effective transient suppression.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type of diode specifically designed for transient suppression, providing efficient and reliable protection.

Technical Specifications

Transient Suppression Devices NSQA6V8AW5T2 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE, LOW LEAKAGE CURRENT

Maximum Breakdown Voltage:

7.1 V

Minimum Breakdown Voltage:

6.4 V

Nominal Breakdown Voltage:

6.8 V

Maximum Clamping Voltage:

13 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

20 W

No. of Elements:

4

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.38 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Trade Compliance

NSQA6V8AW5T2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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