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NSQA12VAW5T2G

Onsemi

NSQA12VAW5T2G by Onsemi

NSQA12VAW5T2G by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 4 ELEMENTS in COMMON ANODE config. It has a Breakdown Voltage of 12V, Max Clamping Voltage of 23V, and Max Power Dissipation of 0.38W. Ideal for transient suppression applications due to its UNIDIRECTIONAL polarity and AVALANCHE technology.

Median Price

$0.098

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 108,269 parts In-Stock

1+ parts

-

100+ parts

$0.106

1k+ parts

$0.088

10k+ parts

$0.078

108,269

-

$0.106

$0.088

$0.078

DigiKey

USA . 108,269 parts In-Stock

1+ parts

-

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$0.090

108,269

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$0.090

Verical

USA . 78,000 parts In-Stock

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$0.098

78,000

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$0.098

Distributors (In-Stock)

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Vyrian

USA . 2,093 parts In-Stock

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$0.082

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2,093

$0.082

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Digiode

USA . 2,096 parts In-Stock

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$0.083

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2,096

$0.083

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Kiltronic GmbH

Germany . 299 parts In-Stock

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299

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Distributors (Availability)

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.048

100+ parts

$0.044

1k+ parts

$0.039

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-

10

$0.048

$0.044

$0.039

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Corphita

USA . 746 parts In-Stock

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$0.078

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746

$0.078

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Corohmni

South Africa . 145 parts In-Stock

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$0.082

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145

$0.082

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Continental Prestige Electronics

USA . 108,269 parts In-Stock

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$0.104

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Metaverse IC Inc.

Canada . 99,000 parts In-Stock

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Kepictronics

USA . 39,000 parts In-Stock

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Kulean Microsystems

USA . 8,237 parts In-Stock

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Perfect Parts

USA . 7,806 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Problanco Electronics

Mexico . 5,570 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,775 parts In-Stock

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TANS Electronics

Latvia . 2,848 parts In-Stock

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SupplyDigital Components

Austria . 1,452 parts In-Stock

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UHIMA Technologies

Türkiye . 886 parts In-Stock

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886

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Overview

Experience the superior quality and reliability of the NSQA12VAW5T2G transient suppression device by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch products that provide exceptional protection against voltage spikes and surges. Ideal for a variety of applications, this product offers peace of mind knowing your electronics are safeguarded. With its common anode configuration and small outline package style, customers can trust in the value and benefits that this product brings to their projects. Choose Onsemi for trusted performance and protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the internal components of the device, making it durable and reliable.

Maximum Non Repetitive Peak Reverse Power Dissipation: 20 W

High power dissipation capability ensures that the device can handle transient surges effectively without getting damaged.

Nominal Breakdown Voltage: 12 V

A breakdown voltage of 12 V indicates that the device can effectively suppress transient voltages above this level, protecting the connected circuitry.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows the device to function effectively in a wide range of environmental conditions.

Reverse Test Voltage: 9 V

A reverse test voltage of 9 V ensures that the device can withstand reverse voltages up to this level, providing added protection for the circuit.

Reference Standard: IEC-61000-4-2

Compliance with international standards ensures that the device meets quality and safety requirements for transient suppression applications.

Technical Specifications

Transient Suppression Devices NSQA12VAW5T2G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE, LOW LEAKAGE CURRENT

Maximum Breakdown Voltage:

12.7 V

Minimum Breakdown Voltage:

11.4 V

Nominal Breakdown Voltage:

12 V

Maximum Clamping Voltage:

23 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

20 W

No. of Elements:

4

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.38 W

Qualification:

Not Qualified

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

5 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

9 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

NSQA12VAW5T2G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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