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LNBTVS4-220S

STMicroelectronics

LNBTVS4-220S by STMicroelectronics

LNBTVS4-220S by STMicroelectronics is a unidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 1800 W, breakdown voltage range of 22-24.2 V, and operates up to 150 °C. This device is perfect for surface mount applications requiring robust surge protection.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,145 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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6,145

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-

-

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Digiode

USA . 3,388 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,388

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-

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Anansix

USA . 765 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

765

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 275 parts In-Stock

1+ parts

$0.155

100+ parts

-

1k+ parts

$0.140

10k+ parts

-

275

$0.155

-

$0.140

-

MKK Technologies

India . 2,154 parts In-Stock

1+ parts

$0.292

100+ parts

-

1k+ parts

-

10k+ parts

-

2,154

$0.292

-

-

-

DigiPath Technology Company

USA . 2,154 parts In-Stock

1+ parts

$0.292

100+ parts

-

1k+ parts

-

10k+ parts

-

2,154

$0.292

-

-

-

Andel Nordic

Denmark . 578 parts In-Stock

1+ parts

$3.574

100+ parts

-

1k+ parts

$3.431

10k+ parts

$3.431

578

$3.574

-

$3.431

$3.431

AZTECH Wire

Italy . 288 parts In-Stock

1+ parts

$18.840

100+ parts

-

1k+ parts

-

10k+ parts

-

288

$18.840

-

-

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Kepictronics

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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5,000

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Parana Technologies

USA . 1,256 parts In-Stock

1+ parts

-

100+ parts

$0.186

1k+ parts

-

10k+ parts

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1,256

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$0.186

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Corphita

USA . 626 parts In-Stock

1+ parts

-

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626

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Overview

Enhance your electronic designs with the LNBTVS4-220S from STMicroelectronics, a leader in innovative semiconductor solutions. This robust transient suppression device offers unparalleled protection against voltage spikes, ensuring reliability and longevity for your applications. With its compact design and proven performance, it’s ideal for automotive, telecommunications, and industrial uses. Trust STMicroelectronics for quality and performance that boosts your product's value while safeguarding your investments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making this device reliable for long-term applications.

Config: SINGLE

A single configuration minimizes complexity, making it easier to integrate into various designs.

Surface Mount: YES

Surface mount technology allows for compact and efficient use of PCB space, facilitating higher density circuit designs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1800 W

This high power dissipation capability allows the device to handle large transient surges without failing, protecting sensitive components.

Nominal Breakdown Voltage: 23.1 V

A nominal breakdown voltage of 23.1 V indicates optimal performance for applications where voltage regulation is critical.

Package Shape: RECTANGULAR

The rectangular package shape supports efficient placement and orientation on PCBs, which aids in manufacturing and assembly.

No. of Terminals: 2

Having two terminals simplifies connections, making the device easier to integrate into existing circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for space-constrained applications, enabling more compact designs.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows this device to function reliably in environments with elevated thermal conditions.

Terminal Finish: MATTE TIN

A matte tin terminal finish enhances solderability and ensures better electrical connections, improving overall reliability.

Terminal Position: DUAL

Dual terminal positioning offers flexibility in layout design, catering to various board configurations.

Maximum Power Dissipation: 5 W

The ability to dissipate up to 5 W means this device can manage heat effectively, ensuring stability in transient conditions.

Minimum Breakdown Voltage: 22 V

A minimum breakdown voltage of 22 V ensures that the device can withstand a range of voltages, enhancing its protective capability.

Maximum Time At Peak Reflow Temperature (s): 30

Allowing a maximum of 30 seconds at peak reflow temperature ensures compatibility with modern PCB assembly processes.

Peak Reflow Temperature: 260 C

A peak reflow temperature of 260 °C ensures compatibility with various soldering techniques, making it ideal for automated production.

Maximum Breakdown Voltage: 24.2 V

With a maximum breakdown voltage of 24.2 V, this device provides robust protection against over-voltage conditions.

Reference Standard: UL RECOGNIZED

Being UL recognized signifies compliance with stringent safety standards, reassuring users of product reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, it offers excellent protection against voltage spikes, critical for safeguarding electronic components.

Technology: AVALANCHE

Avalanche technology ensures rapid response to over-voltage conditions, enhancing circuit protection and reliability.

Terminal Form: C BEND

C bend terminal form aids in secure mounting while ensuring optimal electrical contact, enhancing stability.

Maximum Repetitive Peak Reverse Voltage: 20 V

With a maximum repetitive peak reverse voltage of 20V, this device can handle a variety of voltage conditions safely.

Polarity: UNIDIRECTIONAL

Unidirectional polarity is ideal for specific applications where the direction of current needs to be controlled, enhancing overall circuit protection.

Maximum Clamping Voltage: 35 V

A maximum clamping voltage of 35 V provides reassurance that the device can effectively limit voltage spikes to safe levels.

Diode Element Material: SILICON

Silicon as a diode element material provides excellent electrical characteristics and reliability in suppression applications.

Technical Specifications

Transient Suppression Devices LNBTVS4-220S attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

24.2 V

Minimum Breakdown Voltage:

22 V

Nominal Breakdown Voltage:

23.1 V

Maximum Clamping Voltage:

35 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1800 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

LNBTVS4-220S Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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