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LNBTVS4-222S

STMicroelectronics

LNBTVS4-222S by STMicroelectronics

STMicroelectronics' LNBTVS4-222S is a single-config transient suppression device with 3000W peak power dissipation and 23.1V breakdown voltage. Ideal for protecting electronic circuits from voltage spikes, it features a unidirectional diode element made of silicon and operates at temperatures up to 150°C.

Median Price

$0.469

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,171 parts In-Stock

1+ parts

$0.640

100+ parts

$0.515

1k+ parts

$0.413

10k+ parts

$0.337

4,171

$0.640

$0.515

$0.413

$0.337

Mouser Electronics

USA . 1,789 parts In-Stock

1+ parts

$0.640

100+ parts

$0.515

1k+ parts

$0.413

10k+ parts

$0.336

1,789

$0.640

$0.515

$0.413

$0.336

Chip1Stop

Japan . 22,460 parts In-Stock

1+ parts

-

100+ parts

$0.469

1k+ parts

$0.355

10k+ parts

$0.311

22,460

-

$0.469

$0.355

$0.311

Avnet

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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-

5,000

-

-

-

-

Arrow

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.288

2,500

-

-

-

$0.288

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.288

2,500

-

-

-

$0.288

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 638 parts In-Stock

1+ parts

$0.600

100+ parts

-

1k+ parts

-

10k+ parts

-

638

$0.600

-

-

-

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.640

100+ parts

-

1k+ parts

-

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-

150

$0.640

-

-

-

Vyrian

USA . 2,729 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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-

2,729

-

-

-

-

Anansix

USA . 1,065 parts In-Stock

1+ parts

-

100+ parts

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-

1,065

-

-

-

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ACDS - Activité Composants Distribution Service

France . 518 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

518

-

-

-

-

Bristol Electronics

USA . 518 parts In-Stock

1+ parts

-

100+ parts

$0.378

1k+ parts

$0.323

10k+ parts

-

518

-

$0.378

$0.323

-

Dan-Mar Components

USA . 518 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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518

-

-

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LWI Electronics Inc

India . 95 parts In-Stock

1+ parts

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100+ parts

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95

-

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Speed Components Ltd

Israel . 27 parts In-Stock

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27

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.091

100+ parts

$0.083

1k+ parts

$0.075

10k+ parts

-

350

$0.091

$0.083

$0.075

-

IDEA Electronic Components Group

UK . 187 parts In-Stock

1+ parts

$0.157

100+ parts

-

1k+ parts

$0.142

10k+ parts

-

187

$0.157

-

$0.142

-

MKK Technologies

India . 111 parts In-Stock

1+ parts

$0.296

100+ parts

-

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-

111

$0.296

-

-

-

DigiPath Technology Company

USA . 111 parts In-Stock

1+ parts

$0.296

100+ parts

-

1k+ parts

-

10k+ parts

-

111

$0.296

-

-

-

Ampacity Inc.

Singapore . 13,795 parts In-Stock

1+ parts

$0.399

100+ parts

-

1k+ parts

-

10k+ parts

-

13,795

$0.399

-

-

-

Corphita

USA . 137 parts In-Stock

1+ parts

$0.569

100+ parts

-

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137

$0.569

-

-

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Lixinc

USA . 8,922 parts In-Stock

1+ parts

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8,922

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A-Z Elektronik GmbH

Germany . 4,950 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,300 parts In-Stock

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3,300

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Glotronic Ltd.

UK . 2,040 parts In-Stock

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2,040

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-

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Parana Technologies

USA . 1,573 parts In-Stock

1+ parts

-

100+ parts

$0.188

1k+ parts

-

10k+ parts

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1,573

-

$0.188

-

-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

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100+ parts

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500

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Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.628

1k+ parts

$0.608

10k+ parts

$0.596

50

-

$0.628

$0.608

$0.596

Overview

Experience the ultimate protection with the LNBTVS4-222S by STMicroelectronics, a leading manufacturer in transient suppression devices. Designed to safeguard your electronic components from power surges and voltage spikes, this product offers unparalleled reliability and peace of mind. Ideal for a wide range of applications, this single-configured device is surface mountable and features a compact rectangular package style. With a maximum non-repetitive peak reverse power dissipation of 3000W and a nominal breakdown voltage of 23.1V, the LNBTVS4-222S ensures superior performance under extreme conditions. Trust STMicroelectronics to deliver quality products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the device.

Config: SINGLE

Simplified design with a single configuration makes it easy to use and integrate into systems.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, saving space and reducing installation time.

Maximum Non Repetitive Peak Reverse Power Dissipation: 3000 W

High power dissipation capability ensures reliable protection against transient surges.

Nominal Breakdown Voltage: 23.1 V

Provides effective breakdown voltage to protect sensitive electronics from voltage spikes.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and mounting in electronic systems.

No. of Terminals: 2

Simple two-terminal connection for easy integration into circuits.

Package Style (Meter): SMALL OUTLINE

Compact size is space-saving and suitable for small electronic devices.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures performance in various environmental conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Provides corrosion resistance and reliable electrical connections.

Terminal Position: DUAL

Dual terminal positioning for enhanced stability and ease of installation.

Maximum Power Dissipation: 5 W

Sufficient power dissipation capacity for effective transient suppression.

Minimum Breakdown Voltage: 22 V

Minimum breakdown voltage ensures protection of sensitive components from lower voltage spikes.

Maximum Breakdown Voltage: 24.2 V

High maximum breakdown voltage provides extra protection against high voltage surges.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specific diode type designed for transient voltage suppression applications.

Technology: AVALANCHE

Avalanche technology enables fast response and high energy handling capability.

Terminal Form: C BEND

C-bend terminal form for secure and reliable electrical connections.

Maximum Repetitive Peak Reverse Voltage: 20 V

Suitable for handling repetitive peak reverse voltages up to 20V.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures protection against voltage surges in one direction.

Maximum Clamping Voltage: 30 V

Maximum clamping voltage limits transient voltage spikes to a safe level.

Diode Element Material: SILICON

Silicon diode material ensures reliable and consistent performance in transient suppression applications.

Technical Specifications

Transient Suppression Devices LNBTVS4-222S attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

24.2 V

Minimum Breakdown Voltage:

22 V

Nominal Breakdown Voltage:

23.1 V

Maximum Clamping Voltage:

30 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

3000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

LNBTVS4-222S Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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