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LNBTVS3-220

STMicroelectronics

LNBTVS3-220 by STMicroelectronics

LNBTVS3-220 by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust protection. It features a max reverse power dissipation of 1500 W, breakdown voltage of 23.1 V, and clamping voltage up to 35 V. Ideal for safeguarding sensitive electronics from voltage spikes.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,935 parts In-Stock

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7,935

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Digiode

USA . 4,651 parts In-Stock

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4,651

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ComSIT Distribution GmbH

Germany . 2,300 parts In-Stock

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2,300

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Anansix

USA . 711 parts In-Stock

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711

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 262 parts In-Stock

1+ parts

$0.131

100+ parts

-

1k+ parts

$0.118

10k+ parts

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262

$0.131

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$0.118

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MKK Technologies

India . 713 parts In-Stock

1+ parts

$0.246

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713

$0.246

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DigiPath Technology Company

USA . 713 parts In-Stock

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$0.246

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713

$0.246

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AZTECH Wire

Italy . 178 parts In-Stock

1+ parts

$9.770

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178

$9.770

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Component Stockers USA

USA . 478 parts In-Stock

1+ parts

$99.990

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478

$99.990

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Kepictronics

USA . 5,400 parts In-Stock

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5,400

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Parana Technologies

USA . 2,205 parts In-Stock

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$0.156

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2,205

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$0.156

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Corphita

USA . 463 parts In-Stock

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463

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Overview

Elevate your circuit protection with the LNBTVS3-220 from STMicroelectronics, a leader in semiconductor innovation. This robust transient suppression device ensures superior safety and reliability in applications ranging from telecommunications to automotive systems. With its exceptional power dissipation capabilities and UL recognition, you gain peace of mind knowing your electronics are shielded against voltage spikes. Trust in STMicroelectronics for quality that enhances performance and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resilience against environmental factors, making it suitable for a wide range of applications.

Config: SINGLE

The single configuration simplifies integration into circuits, allowing for straightforward implementation in various designs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high power dissipation capability, this device effectively protects against sudden voltage spikes, enhancing the reliability of connected components.

Nominal Breakdown Voltage: 23.1 V

A well-defined nominal breakdown voltage allows for predictable operation in transient suppression applications, providing peace of mind for circuit protection.

Package Shape: ROUND

The round package shape facilitates easy mounting and integration into existing systems while ensuring reliable electrical performance.

No. of Terminals: 2

Having two terminals simplifies the design and connection process, making it user-friendly for engineers and designers alike.

Package Style (Meter): LONG FORM

The long form package style allows for better thermal management and space saving in PCB layouts, optimizing overall design efficiency.

Terminal Finish: MATTE TIN

A matte tin finish improves solderability and enhances overall reliability in electrical connections, crucial for long-term performance.

Terminal Position: AXIAL

Axial terminal positioning aids in flexible installation options and provides a convenient pathway for circuit design and assembly.

Case Connection: ISOLATED

An isolated case connection minimizes the risk of unwanted electrical interference, thereby enhancing circuit reliability and safety.

Maximum Power Dissipation: 5 W

This device's ability to dissipate power effectively ensures longevity and consistent performance under varying load conditions.

Minimum Breakdown Voltage: 22 V

The minimum breakdown voltage provides a reliable threshold for operation, ensuring timely protection against transients.

Maximum Breakdown Voltage: 24.2 V

A carefully defined maximum breakdown voltage enhances safety by preventing excessive voltage from damaging sensitive components.

Reference Standard: UL RECOGNIZED

Being UL recognized reflects adherence to high safety and performance standards, ensuring trust and confidence in the product.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This specific diode type is engineered for effective voltage suppression, making it ideal for protecting sensitive electronics from transient events.

Technology: AVALANCHE

Avalanche technology ensures rapid response times to voltage spikes, providing superior protection for electronic circuits.

Terminal Form: WIRE

Wire terminal form enables flexibility in connection options, allowing for easier installation in a wide variety of applications.

Maximum Repetitive Peak Reverse Voltage: 20 V

With a defined maximum repetitive peak reverse voltage, this device can handle repeated transients reliably, ensuring ongoing circuit protection.

Polarity: UNIDIRECTIONAL

The unidirectional nature of this device ensures effective suppression of voltage spikes in one direction, optimizing it for specific application requirements.

Maximum Clamping Voltage: 35 V

The maximum clamping voltage reinforces protection by ensuring that transients are held below damaging levels, safeguarding connected devices.

Diode Element Material: SILICON

Silicon as the diode element material enhances performance due to its inherent electrical characteristics, ensuring efficient operation during transient events.

Technical Specifications

Transient Suppression Devices LNBTVS3-220 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

24.2 V

Minimum Breakdown Voltage:

22 V

Nominal Breakdown Voltage:

23.1 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

35 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-201

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

LNBTVS3-220 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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