Loading...

LNBTVS4-221

STMicroelectronics

LNBTVS4-221 by STMicroelectronics

LNBTVS4-221 by STMicroelectronics is a unidirectional transient voltage suppressor diode with a max reverse power dissipation of 2000 W and a breakdown voltage of 23.1 V. It features an isolated case connection and is ideal for protecting sensitive electronics from voltage spikes. This device ensures reliable performance in various applications, including automotive and industrial systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,917 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,917

-

-

-

-

Digiode

USA . 2,635 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,635

-

-

-

-

Anansix

USA . 724 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

724

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 165 parts In-Stock

1+ parts

$0.105

100+ parts

-

1k+ parts

$0.094

10k+ parts

-

165

$0.105

-

$0.094

-

MKK Technologies

India . 207 parts In-Stock

1+ parts

$0.197

100+ parts

-

1k+ parts

-

10k+ parts

-

207

$0.197

-

-

-

DigiPath Technology Company

USA . 207 parts In-Stock

1+ parts

$0.197

100+ parts

-

1k+ parts

-

10k+ parts

-

207

$0.197

-

-

-

AZTECH Wire

Italy . 381 parts In-Stock

1+ parts

$19.560

100+ parts

-

1k+ parts

-

10k+ parts

-

381

$19.560

-

-

-

Component Stockers USA

USA . 461 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

461

$99.990

-

-

-

A-Z Elektronik GmbH

Germany . 6,041 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,041

-

-

-

-

Alle Elektronik GmbH

Germany . 4,027 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,027

-

-

-

-

Kepictronics

USA . 3,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,500

-

-

-

-

Corphita

USA . 2,195 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,195

-

-

-

-

Parana Technologies

USA . 845 parts In-Stock

1+ parts

-

100+ parts

$0.125

1k+ parts

-

10k+ parts

-

845

-

$0.125

-

-

Perfect Parts

USA . 87 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

87

-

-

-

-

Overview

Protect your circuits with the LNBTVS4-221 from STMicroelectronics, a trusted leader in transient suppression solutions. This robust device ensures superior voltage protection, enhancing the longevity of your electronics. Ideal for diverse applications, from automotive to industrial, its compact design and reliable performance deliver unmatched value. Choose STMicroelectronics for quality you can count on and safeguard your investments effectively!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides durability and resistance to environmental factors, ensuring long-lasting performance.

Config: SINGLE

A single configuration simplifies integration into circuits, making it a convenient choice for designers.

Maximum Non Repetitive Peak Reverse Power Dissipation: 2000 W

High power dissipation capability allows the device to handle large transients without failure, making it suitable for demanding applications.

Nominal Breakdown Voltage: 23.1 V

A nominal breakdown voltage close to common operating voltages protects sensitive components from voltage spikes.

Package Shape: ROUND

The round package shape allows for efficient space utilization in circuit designs.

No. of Terminals: 2

With two terminals, this diode is easy to connect and integrate into most circuit layouts.

Package Style (Meter): LONG FORM

The long-form package style provides flexibility in positioning and installation within limited spaces.

Terminal Finish: MATTE TIN

Matte tin provides good solderability and corrosion resistance, ensuring reliable connections.

Terminal Position: AXIAL

Axial terminal positioning facilitates efficient and straightforward PCB layout planning.

Case Connection: ISOLATED

Isolated case connection enhances safety by reducing the risk of short circuits and improving performance in sensitive applications.

Maximum Power Dissipation: 5 W

This power dissipation rating indicates the device can handle moderate power levels, suitable for many transient protection scenarios.

Minimum Breakdown Voltage: 22 V

A minimum breakdown voltage ensures that the device reliably activates under necessary conditions to protect components.

Maximum Breakdown Voltage: 24.2 V

This sets a safe operational range, providing effective clamping without unnecessary activation, enhancing device longevity.

Reference Standard: UL RECOGNIZED

Being UL recognized indicates that the device meets strict safety and performance standards, offering peace of mind to users.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, it efficiently protects against voltage spikes, safeguarding sensitive electronic components.

Technology: AVALANCHE

Avalanche technology enables rapid response to voltage spikes, ensuring immediate protection in transient events.

Terminal Form: WIRE

Wire terminals provide flexibility for soldering and connections, accommodating various circuit requirements.

Maximum Repetitive Peak Reverse Voltage: 20 V

A maximum repetitive voltage rating of 20 V keeps it within safe limits, ensuring the protection of downstream devices.

Polarity: UNIDIRECTIONAL

Unidirectional design allows for precise control over voltage clamping in one direction, enhancing protection reliability.

Maximum Clamping Voltage: 32 V

A maximum clamping voltage of 32 V ensures that high spikes are effectively suppressed, protecting sensitive components.

Diode Element Material: SILICON

Silicon provides excellent electrical properties, ensuring efficient operation and reliability in transient suppression.

Technical Specifications

Transient Suppression Devices LNBTVS4-221 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

24.2 V

Minimum Breakdown Voltage:

22 V

Nominal Breakdown Voltage:

23.1 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

32 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-201

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

2000 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

LNBTVS4-221 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 10