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LNBTVS6-220S

STMicroelectronics

LNBTVS6-220S by STMicroelectronics

LNBTVS6-220S by STMicroelectronics is a unidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 3000 W, breakdown voltage range of 22-24.2 V, and operates up to 150 °C. Its compact design suits surface mount applications in various electronic devices.

Median Price

$0.960

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Future Electronics

Canada . 900 parts In-Stock

1+ parts

$0.960

100+ parts

$0.870

1k+ parts

$0.845

10k+ parts

$0.800

900

$0.960

$0.870

$0.845

$0.800

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,696 parts In-Stock

1+ parts

$1.026

100+ parts

-

1k+ parts

-

10k+ parts

-

4,696

$1.026

-

-

-

IBS Electronics

USA . 900 parts In-Stock

1+ parts

$1.248

100+ parts

$1.131

1k+ parts

$1.099

10k+ parts

$1.040

900

$1.248

$1.131

$1.099

$1.040

Vyrian

USA . 2,429 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,429

-

-

-

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Anansix

USA . 1,946 parts In-Stock

1+ parts

-

100+ parts

-

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1,946

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-

-

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Bristol Electronics

USA . 1,622 parts In-Stock

1+ parts

-

100+ parts

-

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1,622

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-

-

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Dan-Mar Components

USA . 1,622 parts In-Stock

1+ parts

-

100+ parts

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1,622

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 409 parts In-Stock

1+ parts

$0.170

100+ parts

-

1k+ parts

$0.153

10k+ parts

-

409

$0.170

-

$0.153

-

MKK Technologies

India . 1,108 parts In-Stock

1+ parts

$0.320

100+ parts

-

1k+ parts

-

10k+ parts

-

1,108

$0.320

-

-

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DigiPath Technology Company

USA . 1,108 parts In-Stock

1+ parts

$0.320

100+ parts

-

1k+ parts

-

10k+ parts

-

1,108

$0.320

-

-

-

Ampacity Inc.

Singapore . 751 parts In-Stock

1+ parts

$0.920

100+ parts

-

1k+ parts

-

10k+ parts

-

751

$0.920

-

-

-

Corphita

USA . 1,064 parts In-Stock

1+ parts

$0.972

100+ parts

-

1k+ parts

-

10k+ parts

-

1,064

$0.972

-

-

-

AZTECH Wire

Italy . 369 parts In-Stock

1+ parts

$20.450

100+ parts

-

1k+ parts

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10k+ parts

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369

$20.450

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Perfect Parts

USA . 10,148 parts In-Stock

1+ parts

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100+ parts

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10,148

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A-Z Elektronik GmbH

Germany . 5,192 parts In-Stock

1+ parts

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5,192

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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5,000

-

-

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Alle Elektronik GmbH

Germany . 3,461 parts In-Stock

1+ parts

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100+ parts

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3,461

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Kepictronics

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Parana Technologies

USA . 1,308 parts In-Stock

1+ parts

-

100+ parts

$0.204

1k+ parts

-

10k+ parts

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1,308

-

$0.204

-

-

Overview

Elevate your designs with the LNBTVS6-220S from STMicroelectronics, a leader in innovative semiconductor solutions. This robust transient suppression device expertly safeguards your circuits against voltage spikes, ensuring enhanced reliability and performance. Its compact surface-mount design makes integration seamless across various applications, from consumer electronics to industrial systems. Trust in STMicroelectronics for uncompromising quality and peace of mind in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers durability and insulation, making it suitable for various environmental conditions.

Config: SINGLE

A single configuration simplifies design and integration into electronic circuits, making it an efficient choice for space-constrained applications.

Surface Mount: YES

Surface mount capability allows for automated assembly, reducing manufacturing costs and improving reliability.

Maximum Non Repetitive Peak Reverse Power Dissipation: 3000 W

This high power dissipation ensures that the device can handle voltage spikes, protecting sensitive components effectively.

Nominal Breakdown Voltage: 23.1 V

A nominal breakdown voltage of 23.1 V provides reliable performance for voltage regulation and transient suppression.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCBs and allows for efficient thermal management.

No. of Terminals: 2

With only two terminals, installation is straightforward, ensuring a simple and effective connection in circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style is compact, making it ideal for modern electronic devices with limited space.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C ensures reliability in high-temperature environments.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and corrosion resistance, enhancing long-term performance.

Terminal Position: DUAL

Dual terminal positioning allows for flexible mounting options and easier integration into diverse circuit layouts.

Maximum Power Dissipation: 5 W

The ability to dissipate up to 5 W of power further contributes to its effectiveness in managing voltage spikes.

Minimum Breakdown Voltage: 22 V

A minimum breakdown voltage of 22 V ensures the device operates safely within specified voltage limits.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds minimizes thermal stress, ensuring device integrity during assembly.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C allows compatibility with advanced soldering techniques and materials.

Maximum Breakdown Voltage: 24.2 V

The maximum breakdown voltage of 24.2 V provides an effective protection threshold for various electronic applications.

Reference Standard: UL RECOGNIZED

Being UL recognized ensures compliance with safety standards, giving users confidence in product reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, it is specifically designed to protect against voltage spikes.

Technology: AVALANCHE

Avalanche technology ensures rapid response to transients, providing effective protection for sensitive electronics.

Terminal Form: C BEND

C bend terminals facilitate easier soldering and improve mechanical stability within the circuit.

Maximum Repetitive Peak Reverse Voltage: 20 V

A maximum repetitive peak reverse voltage of 20 V defines the operating limits for peak voltage protection.

Polarity: UNIDIRECTIONAL

Unidirectional polarity is advantageous for simplifying circuit design in applications where reverse voltage protection is required.

Maximum Clamping Voltage: 35 V

The maximum clamping voltage of 35 V protects sensitive components from excessive voltage by limiting voltage spikes effectively.

Diode Element Material: SILICON

Silicon material ensures excellent electrical characteristics, providing reliable performance in various applications.

Technical Specifications

Transient Suppression Devices LNBTVS6-220S attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

24.2 V

Minimum Breakdown Voltage:

22 V

Nominal Breakdown Voltage:

23.1 V

Maximum Clamping Voltage:

35 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

3000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

LNBTVS6-220S Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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