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LNBTVS3-220U

STMicroelectronics

LNBTVS3-220U by STMicroelectronics

LNBTVS3-220U by STMicroelectronics is a unidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 1500 W, breakdown voltage range of 22-24.2 V, and operates up to 150 °C. Perfect for surface mount applications in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Pegasus Components GmbH

Germany . 4,950 parts In-Stock

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4,950

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Digiode

USA . 4,244 parts In-Stock

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4,244

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Vyrian

USA . 2,730 parts In-Stock

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2,730

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Flip Electronics

USA . 2,500 parts In-Stock

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2,500

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Anansix

USA . 422 parts In-Stock

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422

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Netsource Technology, Inc.

USA . 163 parts In-Stock

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163

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Prism Electronics

USA . 68 parts In-Stock

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68

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Speed Components Ltd

Israel . 57 parts In-Stock

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57

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Distributors (Availability)

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Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$0.122

100+ parts

$0.111

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$0.100

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70

$0.122

$0.111

$0.100

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IDEA Electronic Components Group

UK . 980 parts In-Stock

1+ parts

$0.176

100+ parts

-

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$0.158

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980

$0.176

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$0.158

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MKK Technologies

India . 1,658 parts In-Stock

1+ parts

$0.330

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1,658

$0.330

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DigiPath Technology Company

USA . 1,658 parts In-Stock

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$0.330

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1,658

$0.330

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AZTECH Wire

Italy . 166 parts In-Stock

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$22.190

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166

$22.190

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Kepictronics

USA . 25,000 parts In-Stock

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Perfect Parts

USA . 23,522 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,035 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,690 parts In-Stock

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Corphita

USA . 4,428 parts In-Stock

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4,428

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Speed Components Ltd (Excess)

Israel . 2,286 parts In-Stock

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2,286

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Parana Technologies

USA . 405 parts In-Stock

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$0.210

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405

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$0.210

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Cyclops Electronics Ltd (Excess)

UK . 99 parts In-Stock

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99

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Overview

Elevate your circuit protection with the LNBTVS3-220U from STMicroelectronics, a trusted leader in semiconductor innovation. This advanced transient suppression device ensures robust reliability and exceptional performance, safeguarding your electronics against voltage spikes. With its compact design and high power dissipation capabilities, it’s perfect for automotive, industrial, and consumer applications. Experience peace of mind knowing you’re backed by ST's commitment to quality and excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy as the package body material provides excellent environmental protection and mechanical strength, making the device reliable in various operating conditions.

Config: SINGLE

A single configuration simplifies circuit design and layout, making it easier to integrate into various applications without requiring complex arrangements.

Surface Mount: YES

The surface mount capability allows for compact designs and automated assembly processes, enhancing manufacturing efficiency and saving board space.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a peak power dissipation of 1500 W, this device can effectively handle short-duration high-energy voltage transients, making it suitable for harsh and demanding environments.

Nominal Breakdown Voltage: 23.1 V

The nominal breakdown voltage of 23.1 V ensures reliable performance in protecting sensitive components against overvoltage conditions.

Package Shape: RECTANGULAR

The rectangular package shape is efficient for surface mounting, providing stability and versatility in PCB design.

No. of Terminals: 2

Featuring two terminals, this design simplifies connections and integration into electronic circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to reduced PCB footprint while maintaining high performance, making it ideal for space-constrained applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this device can function effectively in high-temperature environments, ensuring reliability in various applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish enhances solderability and corrosion resistance, contributing to improved overall device longevity.

Terminal Position: DUAL

The dual terminal position allows for flexible mounting options, enhancing the adaptability of the device in different designs.

Maximum Power Dissipation: 5 W

A maximum power dissipation of 5 W allows this device to accommodate normal operating conditions while providing robust protection against voltage spikes.

Minimum Breakdown Voltage: 22 V

The minimum breakdown voltage of 22 V ensures effective clamping during overvoltage transients, protecting downstream components effectively.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this device can withstand standard soldering processes without compromising quality, ensuring reliability in production.

Peak Reflow Temperature °C: 260

The ability to endure a peak reflow temperature of 260 °C makes it compatible with modern soldering techniques, ensuring reliable performance and longevity.

Maximum Breakdown Voltage: 24.2 V

The maximum breakdown voltage of 24.2 V offers additional protection for sensitive components, effectively clamping transient voltages.

Reference Standard: UL RECOGNIZED

Being UL Recognized assures users of compliance with safety standards, instilling confidence in the reliability and safety of the device.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, this device is specifically designed to protect against voltage spikes, making it a vital component in safeguarding circuits.

Technology: AVALANCHE

Utilizing avalanche technology ensures rapid response and efficient voltage clamping, providing robust protection against transient overvoltage conditions.

Terminal Form: C BEND

The C bend terminal form enhances mechanical stability and ensures secure connections for optimal electrical performance.

Maximum Repetitive Peak Reverse Voltage: 20 V

With a maximum repetitive peak reverse voltage of 20 V, this device effectively protects against recurring overvoltage conditions.

Polarity: UNIDIRECTIONAL

Being unidirectional simplifies the circuit design and reduces the risk of incorrect connections, ensuring reliability in various applications.

Maximum Clamping Voltage: 35 V

A maximum clamping voltage of 35 V provides effective protection by limiting voltage spikes to safe levels, ensuring the integrity of sensitive components.

Diode Element Material: SILICON

Using silicon as the diode element material ensures excellent thermal stability and performance, making it suitable for a wide range of applications.

Technical Specifications

Transient Suppression Devices LNBTVS3-220U attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

24.2 V

Minimum Breakdown Voltage:

22 V

Nominal Breakdown Voltage:

23.1 V

Maximum Clamping Voltage:

35 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

LNBTVS3-220U Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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