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LNBTVS4-220

STMicroelectronics

LNBTVS4-220 by STMicroelectronics

LNBTVS4-220 by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust protection. It features a max reverse power dissipation of 1800 W, breakdown voltage of 23.1 V, and operates effectively in electronic circuits to safeguard against voltage spikes. Its compact round package ensures easy integration into various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,440 parts In-Stock

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4,440

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Digiode

USA . 2,794 parts In-Stock

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2,794

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Zilex Electronics Inc.

Canada . 600 parts In-Stock

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600

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Anansix

USA . 397 parts In-Stock

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397

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,699 parts In-Stock

1+ parts

$0.163

100+ parts

-

1k+ parts

$0.147

10k+ parts

-

1,699

$0.163

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$0.147

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MKK Technologies

India . 150 parts In-Stock

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$0.306

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150

$0.306

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DigiPath Technology Company

USA . 150 parts In-Stock

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$0.306

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150

$0.306

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AZTECH Wire

Italy . 1,196 parts In-Stock

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$20.290

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1,196

$20.290

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Corphita

USA . 4,799 parts In-Stock

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4,799

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Kepictronics

USA . 4,100 parts In-Stock

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4,100

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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3,000

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Alle Elektronik GmbH

Germany . 2,000 parts In-Stock

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2,000

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RC Electronics

USA . 1,039 parts In-Stock

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1,039

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Parana Technologies

USA . 62 parts In-Stock

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$0.195

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62

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$0.195

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Perfect Parts

USA . 8 parts In-Stock

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8

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Overview

Safeguard your electronics with the LNBTVS4-220 from STMicroelectronics, a trusted leader in semiconductor innovation. This high-performance transient suppression device ensures superior protection against voltage spikes, enhancing the reliability of your applications—from automotive systems to consumer electronics. With its durable plastic/epoxy package and UL recognition, it reflects ST's commitment to quality and performance, delivering peace of mind for every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and resistance to environmental factors, making this device reliable for long-term use.

Config: SINGLE

A single configuration simplifies integration into circuits, ensuring ease of use and installation.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1800 W

This high power dissipation capacity allows the device to handle brief voltage spikes effectively, protecting sensitive components.

Nominal Breakdown Voltage: 23.1 V

A nominal breakdown voltage of 23.1 V provides effective voltage clamping, safeguarding circuits from over-voltage conditions.

Package Shape: ROUND

The round package shape contributes to a compact footprint, making it suitable for space-constrained applications.

No. of Terminals: 2

With two terminals, this device ensures straightforward connectivity, enhancing ease of integration into various circuit designs.

Package Style (Meter): LONG FORM

The long form of the package style can be advantageous in applications requiring extended mounting configurations.

Terminal Finish: MATTE TIN

The matte tin finish provides reliable conductivity while preventing corrosion, improving the longevity of connections.

Terminal Position: AXIAL

Axial terminal positioning facilitates easy mounting and connection in different circuit assemblies.

Case Connection: ISOLATED

An isolated case connection ensures safe operation by preventing accidental short circuits and protecting the device from external influences.

Maximum Power Dissipation: 5 W

A maximum power dissipation of 5 W allows for effective thermal management under normal operating conditions.

Minimum Breakdown Voltage: 22 V

The minimum breakdown voltage is low enough to ensure early operation during voltage surges, enhancing equipment protection.

Maximum Breakdown Voltage: 24.2 V

This maximum breakdown voltage provides an additional safety margin, ensuring that the device operates efficiently under transient conditions.

Reference Standard: UL RECOGNIZED

Being UL recognized provides assurance of the device's safety and reliability, increasing trust from end-users and compliance with regulations.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a trans voltage suppressor diode, this product is specifically designed for transient voltage suppression, making it optimal for protection in electronic circuits.

Technology: AVALANCHE

The avalanche technology used in this device enables rapid response to voltage spikes, critical for protecting sensitive electronic components.

Terminal Form: WIRE

Wire terminal forms allow for versatile mounting options and ease of connection in various applications.

Maximum Repetitive Peak Reverse Voltage: 20 V

The ability to handle a maximum repetitive peak reverse voltage of 20 V makes it suitable for applications with frequent voltage variations.

Polarity: UNIDIRECTIONAL

A unidirectional polarity means the diode only allows current to flow in one direction, simplifying the circuit design and enhancing protection.

Maximum Clamping Voltage: 35 V

The max clamping voltage of 35 V ensures effective limiting of voltage spikes, safeguarding valuable circuitry from damage.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent thermal and electrical properties, ensuring reliable performance and durability.

Technical Specifications

Transient Suppression Devices LNBTVS4-220 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

24.2 V

Minimum Breakdown Voltage:

22 V

Nominal Breakdown Voltage:

23.1 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

35 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-201

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1800 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

LNBTVS4-220 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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