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SMF70AT1G

Onsemi

SMF70AT1G by Onsemi

SMF70AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 81.9V breakdown voltage, and 113V clamping voltage. It is used for transient suppression in applications requiring unidirectional polarity protection and a max repetitive peak reverse voltage of 70V.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 18,000 parts In-Stock

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PC Components Company LLC

USA . 11,993 parts In-Stock

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Bristol Electronics

USA . 11,993 parts In-Stock

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Vyrian

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Digiode

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AZTECH Wire

Italy . 1,068 parts In-Stock

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Kulean Microsystems

USA . 5,634 parts In-Stock

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SupplyDigital Components

Austria . 5,382 parts In-Stock

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TANS Electronics

Latvia . 3,251 parts In-Stock

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Problanco Electronics

Mexico . 3,243 parts In-Stock

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Corphita

USA . 2,385 parts In-Stock

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Corohmni

South Africa . 340 parts In-Stock

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Overview

Experience superior quality and unmatched reliability with the SMF70AT1G transient suppression device from Onsemi. As a leading manufacturer in the industry, Onsemi sets the standard for excellence in protecting electronic circuits from voltage spikes. Ideal for a wide range of applications, this product offers customers peace of mind knowing their valuable equipment is safeguarded. Trust in the value, benefits, and advantages that Onsemi's SMF70AT1G provides, ensuring optimal performance and protection for your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the device lightweight and durable, which is ideal for applications where weight and durability are important factors.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on PCBs, saving time and space in the design.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

With a high power dissipation rating, this device can handle surges and transient events effectively, ensuring reliable protection for the circuit it is connected to.

Nominal Breakdown Voltage: 81.9 V

The nominal breakdown voltage of 81.9V provides efficient protection against overvoltage events, safeguarding sensitive components in the circuit.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures fast response times and low clamping voltages, effectively suppressing transient events and providing robust protection for the circuit.

Technical Specifications

Transient Suppression Devices SMF70AT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

86 V

Minimum Breakdown Voltage:

77.8 V

Nominal Breakdown Voltage:

81.9 V

Maximum Clamping Voltage:

113 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.385 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

SMF70AT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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