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SMF16AT1G

Onsemi

SMF16AT1G by Onsemi

SMF16AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 18.75V breakdown voltage, and 26V clamping voltage. Ideal for transient suppression in electronic circuits due to its unidirectional polarity and silicon material.

Median Price

$8.240

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 70 parts In-Stock

1+ parts

$8.240

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70

$8.240

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Distributors (In-Stock)

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Digiode

USA . 750 parts In-Stock

1+ parts

$7.828

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750

$7.828

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Chip Stock

USA . 36,000 parts In-Stock

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36,000

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Vyrian

USA . 8,248 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 774 parts In-Stock

1+ parts

$7.416

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774

$7.416

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Corohmni

South Africa . 289 parts In-Stock

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$8.240

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289

$8.240

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AZTECH Wire

Italy . 652 parts In-Stock

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$14.090

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652

$14.090

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Kepictronics

USA . 50,000 parts In-Stock

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SupplyDigital Components

Austria . 7,765 parts In-Stock

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TANS Electronics

Latvia . 7,442 parts In-Stock

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7,442

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Problanco Electronics

Mexico . 4,572 parts In-Stock

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Kulean Microsystems

USA . 2,230 parts In-Stock

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2,230

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Perfect Parts

USA . 470 parts In-Stock

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470

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UHIMA Technologies

Türkiye . 405 parts In-Stock

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405

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Authorized Procurement Solutions

USA . 70 parts In-Stock

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70

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GreenTree Electronics

Israel . 70 parts In-Stock

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70

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Overview

Enhance your electronic devices with the SMF16AT1G by Onsemi, a top-tier manufacturer of Transient Suppression Devices. This high-quality product offers superior protection against voltage fluctuations, ensuring the longevity and performance of your equipment. Ideal for a wide range of applications, this device is designed to provide peace of mind for both professionals and DIY enthusiasts. Invest in the SMF16AT1G today and experience the unmatched reliability and value that Onsemi delivers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy package provides durability and protection for the device, ensuring long-lasting performance.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

High power dissipation capability allows the device to handle surges and transients effectively, protecting connected components.

Nominal Breakdown Voltage: 18.75 V

The nominal breakdown voltage ensures that the device activates at the specified voltage level, providing reliable protection against over-voltage events.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration into circuit designs and PCB layouts.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance enables hassle-free assembly and soldering processes during manufacturing.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Transistor voltage suppressor diode type ensures effective voltage clamping and transient suppression capabilities.

Technology: ZENER

Zener technology provides stable and reliable breakdown voltage characteristics for consistent protection performance.

Maximum Clamping Voltage: 26 V

High maximum clamping voltage rating ensures that connected equipment is safeguarded against voltage spikes and surges.

Technical Specifications

Transient Suppression Devices SMF16AT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW IMPEDANCE, EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

19.7 V

Minimum Breakdown Voltage:

17.8 V

Nominal Breakdown Voltage:

18.75 V

Maximum Clamping Voltage:

26 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.385 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

SMF16AT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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