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SMF110AT1G

Onsemi

SMF110AT1G by Onsemi

SMF110AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 128.5V breakdown voltage, and 177V clamping voltage. It is used in transient suppression applications due to its unidirectional polarity and silicon diode element material.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 58,000 parts In-Stock

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Vyrian

USA . 9,624 parts In-Stock

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Digiode

USA . 1,726 parts In-Stock

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AZTECH Wire

Italy . 333 parts In-Stock

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$14.050

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SupplyDigital Components

Austria . 7,198 parts In-Stock

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Kulean Microsystems

USA . 6,820 parts In-Stock

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TANS Electronics

Latvia . 6,218 parts In-Stock

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Problanco Electronics

Mexico . 3,374 parts In-Stock

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UHIMA Technologies

Türkiye . 842 parts In-Stock

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Corphita

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Corohmni

South Africa . 299 parts In-Stock

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Overview

Discover the SMF110AT1G by Onsemi, a high-quality Transient Suppression Device designed to protect your electronics from voltage spikes. With Onsemi's reputation for excellence in manufacturing, you can trust that this product will deliver reliable performance. Ideal for a variety of applications, this diode offers peace of mind knowing your devices are safeguarded. Experience the value and benefits of choosing a trusted brand like Onsemi for all your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures durability and protection for the internal components of the transient suppression device.

Surface Mount: YES

Being surface mountable allows for easy installation and integration into circuit boards, making it convenient for manufacturers.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

With a high maximum power dissipation rating of 1000W, this transient suppression device can effectively handle surge currents and protect connected components from damage.

Nominal Breakdown Voltage: 128.5 V

The nominal breakdown voltage of 128.5V ensures reliable protection against transient voltage spikes, safeguarding sensitive electronics.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of TRANS VOLTAGE SUPPRESSOR DIODE ensures efficient suppression of transient overvoltages, providing reliable protection for connected devices.

Maximum Clamping Voltage: 177 V

The maximum clamping voltage of 177V indicates the level at which the transient suppression device will limit excess voltage, safeguarding connected equipment.

Technical Specifications

Transient Suppression Devices SMF110AT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

135 V

Minimum Breakdown Voltage:

122 V

Nominal Breakdown Voltage:

128.5 V

Maximum Clamping Voltage:

177 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.385 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

110 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

SMF110AT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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