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SMF54AT1G

Onsemi

SMF54AT1G by Onsemi

SMF54AT1G by Onsemi is a Zener diode with 54V peak reverse voltage, 1000W power dissipation, and 87.1V clamping voltage. It is used for transient suppression in electronic circuits.

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 76,000 parts In-Stock

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Vyrian

USA . 11,999 parts In-Stock

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Digiode

USA . 797 parts In-Stock

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AZTECH Wire

Italy . 772 parts In-Stock

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$9.500

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Authorized Procurement Solutions

USA . 8,500 parts In-Stock

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TANS Electronics

Latvia . 7,473 parts In-Stock

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Problanco Electronics

Mexico . 3,639 parts In-Stock

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Kulean Microsystems

USA . 3,561 parts In-Stock

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SupplyDigital Components

Austria . 1,960 parts In-Stock

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Corphita

USA . 1,666 parts In-Stock

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Corohmni

South Africa . 180 parts In-Stock

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UHIMA Technologies

Türkiye . 57 parts In-Stock

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Overview

Enhance your electronic devices with the SMF54AT1G by Onsemi, a top-quality transient suppression device that offers exceptional protection against voltage spikes. Manufactured by Onsemi, a trusted name in the industry, this product guarantees reliability and durability. Ideal for a wide range of applications, this diode provides peace of mind by preventing damage from power surges. Trust the SMF54AT1G to safeguard your electronics and ensure uninterrupted performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures the product is lightweight and durable, making it easy to handle and transport.

Config: SINGLE

Single configuration simplifies installation and reduces complexity in the setup process.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and time during assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

High power dissipation capacity provides reliable protection against transient voltage surges, ensuring the safety of the connected components.

Nominal Breakdown Voltage: 63.15 V

Precise breakdown voltage specification ensures accurate protection levels for the connected circuits, preventing damage from overvoltage events.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easy placement and alignment on circuit boards for efficient integration into electronic systems.

No. of Terminals: 2

Having only 2 terminals simplifies the wiring process and reduces the chances of wiring errors during installation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board, allowing for compact designs in electronic systems.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance, ensuring long-term reliability in the connection.

Terminal Position: DUAL

Dual terminal position offers flexibility in wiring configurations, making it easier to connect the device in various circuit layouts.

Maximum Power Dissipation: 0.385 W

Efficient power dissipation capacity helps in maintaining the device's temperature within safe limits, enhancing its reliability and longevity.

Minimum Breakdown Voltage: 60 V

Specify the minimum voltage level at which the device will start conducting properly, ensuring protection from lower voltage transients as well.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance allows for the device to withstand reflow soldering processes during assembly without any degradation in performance.

Maximum Breakdown Voltage: 66.3 V

High maximum breakdown voltage level ensures robust protection against higher voltage transients, safeguarding the connected circuits effectively.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type specializes in clamping excessive voltages quickly, protecting sensitive components from damage due to voltage spikes.

Technology: ZENER

Zener technology provides precise voltage regulation capabilities, ensuring stable and reliable performance under different voltage conditions.

Terminal Form: FLAT

Flat terminal form offers easy soldering and secure connection to the circuit board, enhancing the device's reliability in operation.

Maximum Repetitive Peak Reverse Voltage: 54 V

High maximum repetitive peak reverse voltage capacity allows for continuous protection against voltage surges without compromising the device's performance.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that the device only conducts in one direction, offering efficient protection against voltage spikes in a specific direction.

Maximum Clamping Voltage: 87.1 V

High maximum clamping voltage level ensures that the connected circuits are safeguarded against voltage transients, limiting the voltage to a safe level during surge events.

Diode Element Material: SILICON

Silicon diode element material provides high-performance characteristics, such as fast response time and low forward voltage drop, improving the overall efficiency of the device.

Technical Specifications

Transient Suppression Devices SMF54AT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW IMPEDANCE, EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

66.3 V

Minimum Breakdown Voltage:

60 V

Nominal Breakdown Voltage:

63.15 V

Maximum Clamping Voltage:

87.1 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.385 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

54 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

SMF54AT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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