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SN65220YZBT

Texas Instruments

SN65220YZBT by Texas Instruments

SN65220YZBT by Texas Instruments is a complex transient suppression device with 4 terminals in a square grid array package. It has a max non-repetitive peak reverse power dissipation of 60W and min breakdown voltage of 6.5V. Ideal for protecting electronic circuits from voltage spikes, it features avalanche technology and unidirectional polarity for efficient silicon diode element material usage.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,909 parts In-Stock

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Digiode

USA . 2,662 parts In-Stock

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Bristol Electronics

USA . 1,240 parts In-Stock

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Atlantic Semiconductor

USA . 1,240 parts In-Stock

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Prism Electronics

USA . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,269 parts In-Stock

1+ parts

$0.126

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$1.475

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$0.126

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$1.475

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DigiPath Technology Company

USA . 155 parts In-Stock

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$0.139

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$0.128

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155

$0.139

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IDEA Electronic Components Group

UK . 2,155 parts In-Stock

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$0.142

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$0.128

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$0.142

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ChromeModa Solutions

Germany . 637 parts In-Stock

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$0.142

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$0.116

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One Stop Electronics

USA . 734 parts In-Stock

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$1.010

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AZTECH Wire

Italy . 245 parts In-Stock

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$6.507

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Corphita

USA . 663 parts In-Stock

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Overview

Looking for reliable transient suppression devices? Look no further than the Texas Instruments SN65220YZBT. With a reputation for quality and innovation, Texas Instruments delivers top-notch products that meet the highest industry standards. The SN65220YZBT is perfect for applications requiring complex configurations and offers excellent protection against voltage spikes. Trust in Texas Instruments to provide you with the best solutions for your electronic needs. Experience the value and benefits of the SN65220YZBT today!

Feature Benefit Bullets

Maximum Non Repetitive Peak Reverse Power Dissipation: 60 W

High power dissipation capability ensures protection against sudden power surges.

Package Shape: SQUARE

Square shape allows for efficient space utilization and easy placement on circuit boards.

Minimum Breakdown Voltage: 6.5 V

Provides reliable protection by kicking in at a low voltage threshold.

Peak Reflow Temperature: 260C

Can withstand high temperatures during soldering processes without damage.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizes trans voltage suppressor diodes for effective transient suppression.

Technology: AVALANCHE

Uses avalanche technology for robust and stable performance in suppressing transients.

Technical Specifications

Transient Suppression Devices SN65220YZBT attributes and parameters. Explore more Transient Suppression Devices devices from Texas Instruments

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

8 V

Minimum Breakdown Voltage:

6.5 V

Config:

COMPLEX

Diode Element Material:

SILICON

JESD-30 Code:

S-XBGA-B4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

60 W

No. of Elements:

2

No. of Terminals:

4

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.385 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

6 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SN65220YZBT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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