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SN65240PWLE

Texas Instruments

SN65240PWLE by Texas Instruments

SN65240PWLE by Texas Instruments is a complex transient suppression device with 4 unidirectional avalanche diodes. It has a max non-repetitive peak reverse power dissipation of 60W and a max power dissipation of 0.52W. This small outline package with gull wing terminals is ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,289 parts In-Stock

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Digiode

USA . 2,360 parts In-Stock

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Semicontronic

India . 761 parts In-Stock

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$0.010

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$0.010

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$0.010

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761

$0.010

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Parana Technologies

USA . 1,800 parts In-Stock

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$0.011

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$1.404

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$0.011

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DigiPath Technology Company

USA . 1,058 parts In-Stock

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$0.012

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ChromeModa Solutions

Germany . 1,660 parts In-Stock

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$0.012

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$0.010

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IDEA Electronic Components Group

UK . 1,432 parts In-Stock

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$0.012

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$0.011

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One Stop Electronics

USA . 253 parts In-Stock

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$1.010

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Ampacity Inc.

Singapore . 1,111 parts In-Stock

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$3.010

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AZTECH Wire

Italy . 399 parts In-Stock

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$17.839

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Corphita

USA . 2,728 parts In-Stock

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Corohmni

South Africa . 305 parts In-Stock

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Overview

Enhance your electronic circuits with the top-of-the-line SN65240PWLE by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and reliability. This Transient Suppression Device is perfect for applications requiring protection against voltage spikes and surges. With its complex configuration and advanced technology, this device offers maximum power dissipation and peak reverse power to keep your electronics safe and running smoothly. Upgrade your projects with the SN65240PWLE and experience unparalleled performance and protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making this product suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy integration onto circuit boards, saving space and simplifying assembly processes.

Maximum Non Repetitive Peak Reverse Power Dissipation: 60 W

With a high peak reverse power dissipation rating of 60 W, this transient suppression device can handle sudden voltage spikes effectively, protecting downstream components.

Package Shape: RECTANGULAR

The rectangular package shape offers ease of handling and placement on circuit boards, optimizing space utilization.

No. of Terminals: 8

Having 8 terminals allows for versatile connection options, enhancing the flexibility of the device in different circuit configurations.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures efficient suppression of voltage transients, safeguarding sensitive electronic equipment from damage.

Technology: AVALANCHE

The avalanche technology employed in this device enables rapid response to transient events, providing effective protection against voltage spikes.

No. of Elements: 4

Having 4 elements enhances the overall performance of the device in suppressing transients across multiple channels, improving reliability and protection.

Technical Specifications

Transient Suppression Devices SN65240PWLE attributes and parameters. Explore more Transient Suppression Devices devices from Texas Instruments

Specs

Config:

COMPLEX

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G8

Maximum Non Repetitive Peak Reverse Power Dissipation:

60 W

No. of Elements:

4

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.52 W

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

SN65240PWLE Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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