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SN65220IDBVRQ1

Texas Instruments

SN65220IDBVRQ1 by Texas Instruments

SN65220IDBVRQ1 by Texas Instruments is a Transient Suppression Device with 6 terminals, operating temperature range of -40 to 85 °C. It features a max power dissipation of 0.385 W and breakdown voltage of 8 V. Ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

$0.440

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,000 parts In-Stock

1+ parts

$0.440

100+ parts

$0.430

1k+ parts

$0.420

10k+ parts

-

9,000

$0.440

$0.430

$0.420

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,761 parts In-Stock

1+ parts

-

100+ parts

-

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7,761

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-

-

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Digiode

USA . 2,402 parts In-Stock

1+ parts

-

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2,402

-

-

-

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Bristol Electronics

USA . 460 parts In-Stock

1+ parts

-

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460

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 328 parts In-Stock

1+ parts

$0.010

100+ parts

$0.010

1k+ parts

$0.010

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-

328

$0.010

$0.010

$0.010

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Parana Technologies

USA . 312 parts In-Stock

1+ parts

$0.110

100+ parts

-

1k+ parts

$1.465

10k+ parts

-

312

$0.110

-

$1.465

-

DigiPath Technology Company

USA . 903 parts In-Stock

1+ parts

$0.122

100+ parts

$0.112

1k+ parts

-

10k+ parts

-

903

$0.122

$0.112

-

-

ChromeModa Solutions

Germany . 4,908 parts In-Stock

1+ parts

$0.124

100+ parts

$0.102

1k+ parts

-

10k+ parts

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4,908

$0.124

$0.102

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IDEA Electronic Components Group

UK . 569 parts In-Stock

1+ parts

$0.124

100+ parts

-

1k+ parts

$0.112

10k+ parts

-

569

$0.124

-

$0.112

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One Stop Electronics

USA . 1,558 parts In-Stock

1+ parts

$2.010

100+ parts

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1,558

$2.010

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Ampacity Inc.

Singapore . 933 parts In-Stock

1+ parts

$2.010

100+ parts

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933

$2.010

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-

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AZTECH Wire

Italy . 367 parts In-Stock

1+ parts

$14.426

100+ parts

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367

$14.426

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A-Z Elektronik GmbH

Germany . 4,500 parts In-Stock

1+ parts

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4,500

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Kepictronics

USA . 3,240 parts In-Stock

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3,240

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Corphita

USA . 897 parts In-Stock

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897

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Corohmni

South Africa . 361 parts In-Stock

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361

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Overview

Enhance your electronic designs with the SN65220IDBVRQ1 by Texas Instruments, a top-tier manufacturer known for delivering high-quality transient suppression devices. Ideal for protecting sensitive components from voltage spikes, this complex-configured diode offers unmatched reliability and performance. With a wide operating temperature range, small outline package style, and nickel palladium gold finish, this device is perfect for a variety of applications. Trust in Texas Instruments to provide the best solutions for your design needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and long-lasting performance of the product.

Config: COMPLEX

Complex configuration allows the device to effectively suppress transient surges and protect connected equipment.

Surface Mount: YES

Surface mount capability makes installation easier and more efficient.

Maximum Non Repetitive Peak Reverse Power Dissipation: 60 W

High power dissipation capability ensures reliable protection against transient events.

Package Shape: RECTANGULAR

Rectangular shape provides a compact and space-saving design for easy integration into circuits.

No. of Terminals: 6

Having 6 terminals allows for versatile connections and integration in different circuit layouts.

Package Style (Meter): SMALL OUTLINE

Small outline package style makes the device suitable for applications where space is limited.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance in various environmental conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for operation in cold environments without compromising performance.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel palladium gold finish provides excellent conductivity and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Dual terminal position allows for efficient and secure connections in the circuit.

Maximum Power Dissipation: 0.385 W

Efficient power dissipation capability ensures the device operates within safe limits under load conditions.

Minimum Breakdown Voltage: 6.5 V

High minimum breakdown voltage ensures robust protection against transient voltage spikes.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature ensures the device is not damaged during the soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable soldering and integration into circuit boards.

Maximum Breakdown Voltage: 8 V

High maximum breakdown voltage provides additional safety margin for protecting connected equipment.

Reference Standard: IEC-61000-4-2

Compliance with IEC standards ensures the device meets industry requirements for transient suppression devices.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type effectively suppresses transient voltages and protects sensitive components.

Technology: AVALANCHE

Avalanche technology allows for rapid response to transient events and ensures effective suppression of surges.

Terminal Form: GULL WING

Gull wing terminal form provides secure and reliable connections in surface mount applications.

No. of Elements: 2

Having 2 elements enhances the device's ability to suppress transient events and protect connected equipment.

Maximum Repetitive Peak Reverse Voltage: 6 V

High maximum repetitive peak reverse voltage ensures consistent protection against repeated transient events.

Polarity: UNIDIRECTIONAL

Unidirectional polarity allows for effective suppression of transient voltages in a specific direction.

Diode Element Material: SILICON

Silicon diode element material provides high reliability and performance in suppressing transient voltage spikes.

Technical Specifications

Transient Suppression Devices SN65220IDBVRQ1 attributes and parameters. Explore more Transient Suppression Devices devices from Texas Instruments

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

8 V

Minimum Breakdown Voltage:

6.5 V

Config:

COMPLEX

Diode Element Material:

SILICON

JEDEC-95 Code:

MO-178AB

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

60 W

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.385 W

Qualification:

Not Qualified

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

6 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SN65220IDBVRQ1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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