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SN65220YZBR

Texas Instruments

SN65220YZBR by Texas Instruments

SN65220YZBR by Texas Instruments is a complex transient suppression device with 60W peak power dissipation. It features a 6.5V min breakdown voltage and 8V max breakdown voltage, making it ideal for protecting sensitive electronics from voltage spikes. This square package with grid array style and ball terminals is suitable for surface mount applications in various electronic circuits.

Median Price

$0.331

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

$0.331

1k+ parts

$0.275

10k+ parts

$0.245

39,000

-

$0.331

$0.275

$0.245

DigiKey

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.410

10k+ parts

-

39,000

-

-

$0.410

-

Verical

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.306

39,000

-

-

-

$0.306

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 382 parts In-Stock

1+ parts

$0.257

100+ parts

-

1k+ parts

-

10k+ parts

-

382

$0.257

-

-

-

Vyrian

USA . 4,991 parts In-Stock

1+ parts

$0.271

100+ parts

-

1k+ parts

-

10k+ parts

-

4,991

$0.271

-

-

-

ComSIT Distribution GmbH

Germany . 29,975 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

29,975

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.116

100+ parts

$0.106

1k+ parts

$0.095

10k+ parts

-

350

$0.116

$0.106

$0.095

-

Parana Technologies

USA . 1,239 parts In-Stock

1+ parts

$0.120

100+ parts

-

1k+ parts

$1.471

10k+ parts

-

1,239

$0.120

-

$1.471

-

DigiPath Technology Company

USA . 452 parts In-Stock

1+ parts

$0.132

100+ parts

$0.122

1k+ parts

-

10k+ parts

-

452

$0.132

$0.122

-

-

IDEA Electronic Components Group

UK . 2,329 parts In-Stock

1+ parts

$0.135

100+ parts

-

1k+ parts

$0.122

10k+ parts

-

2,329

$0.135

-

$0.122

-

ChromeModa Solutions

Germany . 1,161 parts In-Stock

1+ parts

$0.135

100+ parts

$0.111

1k+ parts

-

10k+ parts

-

1,161

$0.135

$0.111

-

-

Corphita

USA . 3,318 parts In-Stock

1+ parts

$0.244

100+ parts

-

1k+ parts

-

10k+ parts

-

3,318

$0.244

-

-

-

A-Z Elektronik GmbH

Germany . 3,879 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,879

-

-

-

-

Overview

Enhance your electronic devices with the SN65220YZBR by Texas Instruments, a top-quality transient suppression device that offers unmatched protection against power surges and voltage spikes. Manufactured by industry leader Texas Instruments, this complex configuration diode type device is designed for surface mount applications with a square package shape and a grid array style. With a minimum breakdown voltage of 6.5V and maximum power dissipation of 0.385W, this device ensures reliable performance in various electronic systems. Invest in the SN65220YZBR for peace of mind and safeguard your valuable equipment from unexpected electrical disturbances.

Feature Benefit Bullets

Maximum Non Repetitive Peak Reverse Power Dissipation: 60 W

This high power dissipation capability allows for protection against sudden spikes in voltage, ensuring the device can handle transient surges effectively.

Package Shape: SQUARE

The square package shape provides a compact and efficient design, making it easier to integrate into different electronic circuits.

Minimum Breakdown Voltage: 6.5 V

The low breakdown voltage ensures that the device activates quickly when voltage surpasses the specified level, providing rapid protection against surges.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures efficient regulation of voltage spikes, enhancing the overall effectiveness of the transient suppression device.

Technology: AVALANCHE

The avalanche technology used in this device allows for quick response to transient surges, providing reliable protection for sensitive electronic components.

Technical Specifications

Transient Suppression Devices SN65220YZBR attributes and parameters. Explore more Transient Suppression Devices devices from Texas Instruments

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

8 V

Minimum Breakdown Voltage:

6.5 V

Config:

COMPLEX

Diode Element Material:

SILICON

JESD-30 Code:

S-XBGA-B4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

60 W

No. of Elements:

2

No. of Terminals:

4

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.385 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

6 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SN65220YZBR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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