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SN65220DBV

Texas Instruments

SN65220DBV by Texas Instruments

SN65220DBV by Texas Instruments is a Transient Suppression Device with 60W peak power dissipation, 6.5-8V breakdown voltage, and avalanche technology. It has a small outline package with gull wing terminals and is ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,527 parts In-Stock

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8,527

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Sensible Micro Corp

USA . 3,601 parts In-Stock

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3,601

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ComSIT Distribution GmbH

Germany . 2,564 parts In-Stock

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2,564

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Digiode

USA . 930 parts In-Stock

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930

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Nova Conductors

Japan . 300 parts In-Stock

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300

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NPI Materials, Inc.

USA . 80 parts In-Stock

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80

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Legend Electronics Inc.

USA . 14 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 1,411 parts In-Stock

1+ parts

$0.010

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1,411

$0.010

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Parana Technologies

USA . 1,408 parts In-Stock

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$0.031

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$1.418

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1,408

$0.031

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$1.418

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DigiPath Technology Company

USA . 1,014 parts In-Stock

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$0.034

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$0.032

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1,014

$0.034

$0.032

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ChromeModa Solutions

Germany . 5,766 parts In-Stock

1+ parts

$0.035

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$0.029

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5,766

$0.035

$0.029

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IDEA Electronic Components Group

UK . 875 parts In-Stock

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$0.035

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$0.032

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875

$0.035

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$0.032

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Corohmni

South Africa . 213 parts In-Stock

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$0.063

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213

$0.063

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Ampacity Inc.

Singapore . 1,084 parts In-Stock

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$1.010

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$1.010

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Semicontronic

India . 260 parts In-Stock

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$1.010

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$0.985

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$0.980

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260

$1.010

$0.985

$0.980

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AZTECH Wire

Italy . 232 parts In-Stock

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$11.502

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Argo Parts USA

USA . 3,914 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Infinite Electronics LLP (Excess)

. 2,781 parts In-Stock

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2,781

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Formix International (Excess)

India . 2,704 parts In-Stock

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Continental Prestige Electronics

USA . 2,204 parts In-Stock

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Lixinc

USA . 909 parts In-Stock

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Corphita

USA . 470 parts In-Stock

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A-Z Elektronik GmbH

Germany . 195 parts In-Stock

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195

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Bastille Electronics

Australia . 100 parts In-Stock

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100

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Overview

Protect your electronics with the SN65220DBV by Texas Instruments, a high-quality transient suppression device designed to safeguard against voltage spikes. Manufactured by industry leader Texas Instruments, this complex device offers advanced protection in a small outline package, making it ideal for a wide range of applications. With a unidirectional diode element and avalanche technology, this suppressor diode provides reliable performance and peace of mind for your electronic systems. Trust Texas Instruments to deliver superior quality and protection for your valuable equipment.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum Non Repetitive Peak Reverse Power Dissipation: 60 W

Capable of handling high levels of power spikes, making it reliable in transient suppression applications.

Minimum Breakdown Voltage: 6.5 V

Provides protection by clamping voltages above this threshold, preventing damage to sensitive electronic components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, ensuring optimal performance in suppressing voltage spikes.

Technology: AVALANCHE

Utilizes avalanche breakdown for fast response and high power dissipation capabilities, making it effective in protecting against sudden voltage surges.

Technical Specifications

Transient Suppression Devices SN65220DBV attributes and parameters. Explore more Transient Suppression Devices devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

8 V

Minimum Breakdown Voltage:

6.5 V

Config:

COMPLEX

Diode Element Material:

SILICON

JEDEC-95 Code:

MO-178AB

JESD-30 Code:

R-PDSO-G6

Maximum Non Repetitive Peak Reverse Power Dissipation:

60 W

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.385 W

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN65220DBV Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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