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ESDA6V1M6

STMicroelectronics

ESDA6V1M6 by STMicroelectronics

ESDA6V1M6 by STMicroelectronics is a transient suppression device with 4 common anode elements. It has a max non-repetitive peak reverse power dissipation of 100W and breakdown voltage of 6.65V. Ideal for protecting sensitive electronics from voltage spikes in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 36,500 parts In-Stock

1+ parts

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36,500

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Vyrian

USA . 3,013 parts In-Stock

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3,013

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Digiode

USA . 2,390 parts In-Stock

1+ parts

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2,390

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Anansix

USA . 2,343 parts In-Stock

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2,343

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

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500

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A2Z Electronics, Inc.

USA . 25 parts In-Stock

1+ parts

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25

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Bristol Electronics

USA . 25 parts In-Stock

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25

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 983 parts In-Stock

1+ parts

$0.014

100+ parts

-

1k+ parts

$0.012

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983

$0.014

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$0.012

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MKK Technologies

India . 2,361 parts In-Stock

1+ parts

$0.026

100+ parts

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2,361

$0.026

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DigiPath Technology Company

USA . 2,361 parts In-Stock

1+ parts

$0.026

100+ parts

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2,361

$0.026

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Ampacity Inc.

Singapore . 895 parts In-Stock

1+ parts

$2.010

100+ parts

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895

$2.010

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AZTECH Wire

Italy . 394 parts In-Stock

1+ parts

$13.622

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394

$13.622

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Corphita

USA . 1,687 parts In-Stock

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1,687

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Parana Technologies

USA . 1,415 parts In-Stock

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$0.016

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1,415

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$0.016

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Bastille Electronics

Australia . 800 parts In-Stock

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800

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Overview

Protect your electronic devices with the reliable ESDA6V1M6 by STMicroelectronics. As a leading manufacturer in transient suppression devices, STMicroelectronics guarantees top-notch quality and performance. This small outline device with common anode configuration is designed for various applications where protection against voltage transients is crucial. With a nominal breakdown voltage of 6.65 V and maximum non-repetitive peak reverse power dissipation of 100 W, this product offers unmatched value, benefits, and advantages to customers looking for superior protection and peace of mind. Trust STMicroelectronics for all your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum Non Repetitive Peak Reverse Power Dissipation: 100 W

Capable of handling high power surges, making it suitable for applications where transient suppression is crucial.

Nominal Breakdown Voltage: 6.65 V

Provides effective protection by clamping voltage spikes to a safe level, protecting downstream components.

Surface Mount: YES

Easily mountable on PCBs, saving space and simplifying the assembly process.

Package Shape: RECTANGULAR

Convenient shape for easy placement on circuit boards and integration into existing designs.

Technology: AVALANCHE

Utilizes avalanche breakdown for enhanced clamping performance and reliability in suppressing transient voltage spikes.

Diode Element Material: SILICON

Silicon diodes are known for their high efficiency and fast response times, making them ideal for transient suppression applications.

Technical Specifications

Transient Suppression Devices ESDA6V1M6 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

6.1 V

Nominal Breakdown Voltage:

6.65 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

100 W

No. of Elements:

4

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESDA6V1M6 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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