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DFLT6V5A-7

Diodes Incorporated

DFLT6V5A-7 by Diodes Incorporated

DFLT6V5A-7 by Diodes Inc. is a single avalanche diode with 7.6V breakdown voltage, 225W peak power dissipation, and 250uA reverse current. Ideal for transient suppression in electronics, it features a unidirectional polarity and matte tin terminal finish for SMT applications.

Median Price

$0.450

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,186 parts In-Stock

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$0.450

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$0.112

5,186

$0.450

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$0.112

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

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$0.210

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10

$0.210

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Chip Stock

USA . 445,200 parts In-Stock

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445,200

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Vyrian

USA . 6,877 parts In-Stock

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Bristol Electronics

USA . 65 parts In-Stock

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$0.536

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65

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$0.536

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Prism Electronics

USA . 50 parts In-Stock

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50

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Ampacity Inc.

Singapore . 1,085 parts In-Stock

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$0.010

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$0.010

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Aztec Data Supply Inc.

USA . 2,448 parts In-Stock

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$0.096

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2,448

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Corohmni

South Africa . 202 parts In-Stock

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$0.119

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202

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Continental Prestige Electronics

USA . 4,806 parts In-Stock

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$0.210

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$0.206

4,806

$0.210

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$0.206

Argo Parts USA

USA . 1,118 parts In-Stock

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$0.210

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$0.204

1,118

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Netroflash

USA . 500 parts In-Stock

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$0.210

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500

$0.210

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AZTECH Wire

Italy . 639 parts In-Stock

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$8.884

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639

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iodParts Technologies Inc.

India . 110,632 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Lixinc

USA . 17,510 parts In-Stock

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Kepictronics

USA . 7,000 parts In-Stock

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7,000

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Overview

Looking to safeguard your electronics from power surges? Look no further than the DFLT6V5A-7 by Diodes Incorporated. Crafted with top-notch quality and expertise, this Transient Suppression Device offers unparalleled protection for your devices. With a nominal breakdown voltage of 7.6V and maximum clamping voltage of 11.2V, this diode ensures reliable performance even in the face of sudden voltage spikes. Trust Diodes Incorporated to provide you with the peace of mind you deserve.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the device, improving its durability and reliability.

Maximum Non Repetitive Peak Reverse Power Dissipation: 225 W

High power dissipation capability allows the device to handle sudden surges or spikes effectively, protecting the circuit from damage.

Nominal Breakdown Voltage: 7.6 V

The nominal breakdown voltage ensures that the device activates when the voltage exceeds a safe level, providing overvoltage protection for the circuit.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the device to function reliably in different environmental conditions, making it suitable for various applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode is specifically designed for transient voltage suppression, offering efficient protection for sensitive electronic components.

Technical Specifications

Transient Suppression Devices DFLT6V5A-7 attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

7.98 V

Minimum Breakdown Voltage:

7.22 V

Nominal Breakdown Voltage:

7.6 V

Case Connection:

CATHODE

Maximum Clamping Voltage:

11.2 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

225 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

6.5 V

Maximum Reverse Current:

250 uA

Reverse Test Voltage:

6.5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

DFLT6V5A-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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