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NUP1105LT3G

Onsemi

NUP1105LT3G by Onsemi

NUP1105LT3G by Onsemi is a Trans Voltage Suppressor Diode with 2 elements, offering bidirectional polarity and a max clamping voltage of 44V. It has a common cathode configuration, small outline package style, and is suitable for transient suppression applications requiring a breakdown voltage range of 25.7V to 28.4V.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 67,000 parts In-Stock

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Vyrian

USA . 8,609 parts In-Stock

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Digiode

USA . 1,637 parts In-Stock

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AZTECH Wire

Italy . 579 parts In-Stock

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Kepictronics

USA . 51,000 parts In-Stock

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TANS Electronics

Latvia . 8,020 parts In-Stock

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Kulean Microsystems

USA . 6,841 parts In-Stock

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Metaverse IC Inc.

Canada . 6,529 parts In-Stock

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Problanco Electronics

Mexico . 2,641 parts In-Stock

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SupplyDigital Components

Austria . 2,617 parts In-Stock

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Corphita

USA . 1,964 parts In-Stock

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UHIMA Technologies

Türkiye . 428 parts In-Stock

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Corohmni

South Africa . 372 parts In-Stock

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Overview

Discover the superior protection of the NUP1105LT3G by Onsemi, a leading manufacturer in the industry. This Transient Suppression Device offers unbeatable quality and reliability, ensuring your electronics are safeguarded against voltage spikes. With its common cathode configuration and bidirectional polarity, this product is versatile and suitable for a wide range of applications. Experience peace of mind knowing that your devices are safe with the NUP1105LT3G, providing optimal clamping voltage and maximum breakdown voltage. Trust Onsemi for unparalleled performance and protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides good insulation and protection for the components inside, making the product durable and reliable.

Nominal Breakdown Voltage: 27.05 V

The high breakdown voltage ensures effective protection against transient surges, making it suitable for various applications where protection is critical.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

The high power dissipation capability allows the device to handle large surge currents without getting damaged, ensuring long-term protection for the connected equipment.

Surface Mount: YES

Being surface mountable makes installation easy and facilitates compact designs, making it ideal for space-constrained applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures efficient and fast clamping of voltage transients, providing superior protection for sensitive electronics.

Technical Specifications

Transient Suppression Devices NUP1105LT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

28.4 V

Minimum Breakdown Voltage:

25.7 V

Nominal Breakdown Voltage:

27.05 V

Maximum Clamping Voltage:

44 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

24 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

NUP1105LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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