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NUP1105LT1

Onsemi

NUP1105LT1 by Onsemi

NUP1105LT1 by Onsemi is a Transient Suppression Device with 2 common cathode elements. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 27.05V. Ideal for applications requiring bidirectional protection against transient voltage spikes in compact designs.

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,023 parts In-Stock

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Vyrian

USA . 1,327 parts In-Stock

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TANS Electronics

Latvia . 6,110 parts In-Stock

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Problanco Electronics

Mexico . 4,983 parts In-Stock

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SupplyDigital Components

Austria . 4,652 parts In-Stock

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Kulean Microsystems

USA . 3,738 parts In-Stock

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Corphita

USA . 1,299 parts In-Stock

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UHIMA Technologies

Türkiye . 417 parts In-Stock

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Corohmni

South Africa . 106 parts In-Stock

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Overview

Protect your electronic devices with the NUP1105LT1 by Onsemi, the ultimate solution in transient suppression devices. Manufactured by a trusted industry leader, this product offers unmatched quality and reliability. Ideal for a variety of applications, this common cathode diode provides superior protection against voltage spikes and surges. Ensure the longevity and performance of your electronics with the NUP1105LT1 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and stability to the package body, ensuring the device can withstand various environmental conditions.

Config: COMMON CATHODE, 2 ELEMENTS

Having common cathode configuration with 2 elements allows for efficient transient suppression and protection against voltage spikes.

Surface Mount: YES

Being surface mountable makes installation and integration of the device easier and more convenient.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

High power dissipation capability ensures effective protection of connected circuits from transient events.

Nominal Breakdown Voltage: 27.05 V

The specified breakdown voltage ensures that the device activates at the desired voltage level, providing reliable protection.

Package Shape: RECTANGULAR

Rectangular shape makes the device compatible with standard mounting practices and facilitates efficient use of board space.

No. of Terminals: 3

Having 3 terminals allows for proper connection and secure placement of the device within the circuit.

Terminal Finish: TIN LEAD

Tin lead finish on the terminals provides good conductivity and solderability, ensuring stable electrical connections.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting and connection options in the circuit.

Minimum Breakdown Voltage: 25.7 V

The specified minimum breakdown voltage ensures that the device triggers at the predetermined voltage level, enhancing protection capabilities.

Peak Reflow Temperature °C: 235

High peak reflow temperature tolerance enables the device to withstand reflow processes during assembly without compromising performance.

Maximum Breakdown Voltage: 28.4 V

The maximum breakdown voltage threshold ensures that the device can handle voltage spikes without damage, enhancing reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type of diode is specifically designed for transient voltage suppression, offering effective protection against voltage surges.

Technology: AVALANCHE

Avalanche technology ensures fast response to transient events and reliable suppression of high-energy surges.

Terminal Form: GULL WING

Gull wing terminals provide secure mounting and easy soldering, enhancing the device's durability and reliability.

No. of Elements: 2

Having 2 elements increases the device's capacity to handle transient events and offers redundancy for improved protection.

Maximum Repetitive Peak Reverse Voltage: 24 V

The device's ability to withstand repetitive peak reverse voltages up to 24 V ensures long-term protection and reliability.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows the device to protect against voltage spikes in both directions, providing comprehensive circuit protection.

Maximum Clamping Voltage: 44 V

Having a maximum clamping voltage of 44 V ensures that the device limits voltage spikes to a safe level, preventing damage to connected components.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability in transient suppression applications, making the device a reliable choice for protecting circuits.

Technical Specifications

Transient Suppression Devices NUP1105LT1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

28.4 V

Minimum Breakdown Voltage:

25.7 V

Nominal Breakdown Voltage:

27.05 V

Maximum Clamping Voltage:

44 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

24 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

NUP1105LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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