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NUP1301U,135

NXP Semiconductors

NUP1301U,135 by NXP Semiconductors

NUP1301U,135 by NXP Semiconductors is a transient suppression device designed for effective voltage clamping. It features a max reverse power dissipation of 200W, operates up to 150 °C, and has a breakdown voltage of 100V. Ideal for protecting sensitive electronics from voltage spikes.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,581 parts In-Stock

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2,581

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Digiode

USA . 2,486 parts In-Stock

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2,486

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Anansix

USA . 2,370 parts In-Stock

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2,370

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One Stop Electronics

USA . 832 parts In-Stock

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$0.010

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832

$0.010

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AZTECH Wire

Italy . 12,875 parts In-Stock

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$6.510

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12,875

$6.510

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Corphita

USA . 3,120 parts In-Stock

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3,120

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UNI Independent Distributors

Spain . 1,469 parts In-Stock

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1,469

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Supply Digital

USA . 133 parts In-Stock

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Overview

Unlock unparalleled protection for your electronic designs with the NUP1301U,135 from NXP Semiconductors. Renowned for their commitment to quality and innovation, NXP delivers robust transient suppression solutions that enhance device reliability and longevity. Perfect for automotive and industrial applications, this diode not only safeguards your circuits but also simplifies your design process, ensuring peace of mind in every project. Elevate your technology with NXP’s trusted expertise!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers excellent durability and resistance to environmental factors, making the device suitable for various applications.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

The series connected configuration with a center tap allows for effective voltage management and provides flexibility in circuit integration.

Surface Mount: YES

Surface mount capability enables easy integration into compact circuit designs, saving space and improving assembly efficiency.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

A high maximum power dissipation rating allows the device to handle substantial transient events without failure, ensuring reliable performance.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient PCB layout and component placement, optimizing space utilization.

No. of Terminals: 3

The three terminals provide ease of installation and integration into existing circuits, enhancing versatility.

Package Style (Meter): SMALL OUTLINE

The small outline style contributes to a compact footprint, making it ideal for space-constrained applications.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C signifies robustness and makes the device suitable for high-temperature environments.

Terminal Position: DUAL

Dual terminal positioning supports flexible orientation on the circuit board, simplifying the assembly process.

Maximum Power Dissipation: 0.2 W

The power dissipation capability, while lower, indicates the device is designed for use in low-power applications, ensuring efficient operation.

Minimum Breakdown Voltage: 100 V

A minimum breakdown voltage of 100V provides strong protection against voltage spikes, enhancing device longevity.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, this device effectively protects circuits against voltage transients, improving circuit reliability.

Technology: AVALANCHE

The avalanche technology enhances the diode’s ability to clamp voltage spikes, providing superior transient protection.

Terminal Form: GULL WING

Gull wing terminals improve solder joint reliability and facilitate automated assembly processes.

No. of Elements: 2

Having two elements allows for better voltage handling and improved efficiency in clamp and safety ratings.

Polarity: UNIDIRECTIONAL

Unidirectional operation ensures effective voltage clamping in one polarity, optimizing circuit protection against reverse voltage spikes.

Diode Element Material: SILICON

Silicon as the diode element material provides exceptional electrical properties and performance, enhancing overall reliability.

Technical Specifications

Transient Suppression Devices NUP1301U,135 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

100 V

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

NUP1301U,135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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