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NUP1105LT3

Onsemi

NUP1105LT3 by Onsemi

NUP1105LT3 by Onsemi is a Trans Voltage Suppressor Diode with 2 elements, common cathode configuration, and bidirectional polarity. It has a max clamping voltage of 44V and operates b/w -55 °C to 150°C. Ideal for transient suppression applications requiring a breakdown voltage range of 25.7V to 28.4V in small outline packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,137 parts In-Stock

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Digiode

USA . 1,540 parts In-Stock

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1,540

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SupplyDigital Components

Austria . 4,491 parts In-Stock

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Kulean Microsystems

USA . 2,089 parts In-Stock

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Problanco Electronics

Mexico . 1,930 parts In-Stock

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Corphita

USA . 1,900 parts In-Stock

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TANS Electronics

Latvia . 1,797 parts In-Stock

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UHIMA Technologies

Türkiye . 855 parts In-Stock

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Corohmni

South Africa . 274 parts In-Stock

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Overview

Enhance your electronic devices with the NUP1105LT3 by Onsemi, a top-of-the-line transient suppression device that offers superior quality and reliability. Manufactured by industry leader Onsemi, this product is designed to protect your equipment from voltage spikes and surges, ensuring smooth and uninterrupted operation. Perfect for a wide range of applications, the NUP1105LT3 provides invaluable protection for sensitive electronics, offering peace of mind and longevity for your investments. Upgrade your devices today with the NUP1105LT3 and experience the difference in performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, extending the product's lifespan.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

Can handle high levels of power surges effectively, ensuring protection for connected devices.

Nominal Breakdown Voltage: 27.05 V

Offers reliable protection by activating at a specific voltage level, preventing damage to sensitive electronics.

Maximum Operating Temperature: 150 °C

Capable of operating in high-temperature environments without compromising performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizes diodes that are specifically designed for transient voltage suppression, enhancing the product's effectiveness in protecting against voltage spikes.

Technical Specifications

Transient Suppression Devices NUP1105LT3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

28.4 V

Minimum Breakdown Voltage:

25.7 V

Nominal Breakdown Voltage:

27.05 V

Maximum Clamping Voltage:

44 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

24 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

NUP1105LT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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