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NUP1301ML3T1

Onsemi

NUP1301ML3T1 by Onsemi

NUP1301ML3T1 by Onsemi is a Transient Suppression Device with 70V breakdown voltage, 0.715A output current, and 0.715V forward voltage. It is ideal for protecting electronic circuits from voltage spikes in applications such as power supplies and communication systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 20,590 parts In-Stock

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Vyrian

USA . 1,615 parts In-Stock

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1,615

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Semi Source

USA . 100 parts In-Stock

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100

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Digiode

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91

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SupplyDigital Components

Austria . 8,040 parts In-Stock

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Problanco Electronics

Mexico . 6,800 parts In-Stock

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6,800

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Kulean Microsystems

USA . 4,603 parts In-Stock

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TANS Electronics

Latvia . 1,667 parts In-Stock

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Corphita

USA . 781 parts In-Stock

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UHIMA Technologies

Türkiye . 294 parts In-Stock

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Corohmni

South Africa . 145 parts In-Stock

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Overview

Upgrade your electronic devices with the NUP1301ML3T1 from Onsemi, a leading manufacturer in transient suppression devices. Designed with top-quality materials and advanced technology, this product offers superior protection against voltage spikes and surges, ensuring the longevity and reliability of your equipment. Ideal for a wide range of applications, this series-connected, center tap device is compact, easy to install, and delivers outstanding performance in demanding environments. Trust Onsemi to deliver exceptional value, benefits, and advantages with the NUP1301ML3T1, providing peace of mind for both your devices and your wallet.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides durability and protection for the internal components, making the product reliable and long-lasting.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Series connected configuration with center tap and 2 elements allows for efficient transient suppression, ensuring effective protection against voltage spikes and surges.

Surface Mount: YES

Surface mount capability enables easy and convenient installation on circuit boards, saving time and effort during assembly.

Package Shape: RECTANGULAR

Rectangular package shape is space-saving and fits well in compact electronic devices, making it suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C ensures reliable performance even under challenging environmental conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity, enhancing the overall quality and connectivity of the product.

Minimum Breakdown Voltage: 70 V

Minimum breakdown voltage of 70 V offers effective protection against voltage fluctuations, safeguarding sensitive electronic components in the circuit.

Peak Reflow Temperature °C: 235

High peak reflow temperature of 235 °C ensures secure attachment during the soldering process, preventing potential damage to the device.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type is specifically designed for transient suppression applications, providing superior performance in protecting against voltage spikes.

Maximum Forward Voltage (VF): 0.715 V

Low maximum forward voltage of 0.715 V ensures minimal voltage drop during normal operation, reducing power losses and improving efficiency.

Maximum Output Current: 0.715 A

High maximum output current of 0.715 A allows for effective suppression of transient currents, maintaining the integrity of the circuit.

Technology: AVALANCHE

Avalanche technology offers excellent clamping performance and reliability in suppressing transient voltages, enhancing the overall surge protection capability of the device.

Terminal Form: GULL WING

Gull wing terminal form is suitable for surface mounting and provides secure mechanical attachment, ensuring stability and durability in the circuit.

No. of Elements: 2

Having 2 elements allows for redundancy and backup protection, increasing the reliability and effectiveness of the transient suppression device.

Maximum Repetitive Peak Reverse Voltage: 70 V

High maximum repetitive peak reverse voltage of 70 V offers robust protection against reverse polarity conditions, preventing damage to the device.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that the device only conducts in one direction, providing targeted protection against voltage spikes and surges.

Maximum Non Repetitive Peak Forward Current: 0.5 A

High maximum non-repetitive peak forward current of 0.5 A allows for effective handling of sudden surges in current, safeguarding the circuitry from damage.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability in transient suppression, ensuring superior performance and longevity of the device.

Technical Specifications

Transient Suppression Devices NUP1301ML3T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

70 V

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.715 V

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

.5 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.715 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

NUP1301ML3T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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