Loading...

SMF64AT1G

Onsemi

SMF64AT1G by Onsemi

SMF64AT1G by Onsemi is a Zener diode with 64V max repetitive peak reverse voltage, 1000W non-repetitive peak power dissipation, and 103V max clamping voltage. It is used for transient suppression in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 72,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

72,000

-

-

-

-

Vyrian

USA . 12,528 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,528

-

-

-

-

Digiode

USA . 1,032 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,032

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 129 parts In-Stock

1+ parts

$8.090

100+ parts

-

1k+ parts

-

10k+ parts

-

129

$8.090

-

-

-

Component Stockers USA

USA . 643 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

643

$99.990

-

-

-

Kulean Microsystems

USA . 4,066 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,066

-

-

-

-

Problanco Electronics

Mexico . 3,627 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,627

-

-

-

-

TANS Electronics

Latvia . 2,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,520

-

-

-

-

Corphita

USA . 1,356 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,356

-

-

-

-

SupplyDigital Components

Austria . 650 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

650

-

-

-

-

UHIMA Technologies

Türkiye . 433 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

433

-

-

-

-

Corohmni

South Africa . 369 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

369

-

-

-

-

Overview

Looking for reliable transient suppression devices? Look no further than the SMF64AT1G by Onsemi! With a reputation for high-quality products, Onsemi delivers top-notch solutions to protect your valuable electronics. Ideal for various applications, this diode offers peace of mind with its maximum non-repetitive peak reverse power dissipation of 1000W and nominal breakdown voltage of 74.85V. Trust Onsemi to provide superior protection for your electronics with the SMF64AT1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product durable and allows for better insulation and protection of the internal components.

Config: SINGLE

The single configuration simplifies the installation process and reduces complexity in setup.

Surface Mount: YES

Being surface mountable makes it easier to integrate this transient suppression device into existing circuit boards or systems.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

The high power dissipation capability ensures reliable protection against transient voltage spikes and surges.

Nominal Breakdown Voltage: 74.85 V

The specific breakdown voltage value ensures optimal protection against overvoltage conditions within the specified range.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement and mounting in a variety of configurations.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and ensures proper functionality.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact integration into the overall system design.

Terminal Finish: TIN

The tin terminal finish provides good solderability and corrosion resistance for long-lasting performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in connection options and enhances versatility in usage.

Maximum Power Dissipation: 0.385 W

The low power dissipation value helps in reducing energy consumption and heat generation during operation.

Minimum Breakdown Voltage: 71.1 V

The minimum breakdown voltage ensures protection against lower level transient voltage spikes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability allows for reliable soldering and assembly processes.

Maximum Breakdown Voltage: 78.6 V

The maximum breakdown voltage provides protection against higher level transient voltage spikes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode ensures effective transient voltage suppression and surge protection.

Technology: ZENER

The Zener technology offers stable and reliable voltage clamping performance under transient conditions.

Terminal Form: FLAT

The flat terminal form facilitates easy and secure connections during installation.

Maximum Repetitive Peak Reverse Voltage: 64 V

The maximum repetitive peak reverse voltage rating ensures protection against repeated transient voltage events.

Polarity: UNIDIRECTIONAL

The unidirectional polarity design ensures that the device only conducts in one direction, providing effective protection against voltage spikes.

Maximum Clamping Voltage: 103 V

The maximum clamping voltage value limits the voltage level across the device during transient events, protecting downstream components.

Diode Element Material: SILICON

The use of silicon diode element material offers high reliability and fast response time for transient voltage suppression.

Technical Specifications

Transient Suppression Devices SMF64AT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

78.6 V

Minimum Breakdown Voltage:

71.1 V

Nominal Breakdown Voltage:

74.85 V

Maximum Clamping Voltage:

103 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.385 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

64 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

SMF64AT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20