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Onsemi Transient Suppression Devices 194

Transient Suppression Devices
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Maximum Breakdown Voltage Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Minimum Diode Capacitance Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Reverse Power Dissipation No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Reference Standard Nominal Reference Voltage Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Tolerance Working Test Current
SMF60AT1G by Onsemi

SMF60AT1G

Onsemi

SMF60AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 70.2V breakdown voltage, and 96.8V clamping voltage. It is used for transient suppression in applications requiring unidirectional polarity protection in surface-mount configurations.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

73.7 V

66.7 V

70.2 V

96.8 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

60 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF64AT1G by Onsemi

SMF64AT1G

Onsemi

SMF64AT1G by Onsemi is a Zener diode with 64V max repetitive peak reverse voltage, 1000W non-repetitive peak power dissipation, and 103V max clamping voltage. It is used for transient suppression in electronic circuits.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

78.6 V

71.1 V

74.85 V

103 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

64 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF70AT1G by Onsemi

SMF70AT1G

Onsemi

SMF70AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 81.9V breakdown voltage, and 113V clamping voltage. It is used for transient suppression in applications requiring unidirectional polarity protection and a max repetitive peak reverse voltage of 70V.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

86 V

77.8 V

81.9 V

113 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

70 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF75AT1G by Onsemi

SMF75AT1G

Onsemi

SMF75AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 87.7V breakdown voltage, and 121V clamping voltage. It is used for transient suppression in applications requiring unidirectional polarity protection and a max repetitive peak reverse voltage of 75V.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

92.1 V

83.3 V

87.7 V

121 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

75 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF78AT1G by Onsemi

SMF78AT1G

Onsemi

SMF78AT1G by Onsemi is a Zener diode with 78V peak reverse voltage, 1000W power dissipation, and 126V clamping voltage. It is used for transient suppression in electronic circuits.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

95.8 V

86.7 V

91.25 V

126 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

78 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF85AT1G by Onsemi

SMF85AT1G

Onsemi

SMF85AT1G by Onsemi is a Zener diode with 85V peak reverse voltage and 1000W non-repetitive power dissipation. It is a unidirectional transient suppression device in a small outline package, ideal for protecting electronic circuits from voltage spikes in applications like power supplies and communication systems.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

104 V

94.4 V

99.2 V

137 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

85 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF90AT1G by Onsemi

SMF90AT1G

Onsemi

SMF90AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 105.5V breakdown voltage, and 146V clamping voltage. It is used for transient suppression in applications requiring protection against voltage spikes in electronic circuits.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

111 V

100 V

105.5 V

146 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

90 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

NSQA12VAW5T2 by Onsemi

NSQA12VAW5T2

Onsemi

NSQA12VAW5T2 by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 4 ELEMENTS in COMMON ANODE config. It has a Breakdown Voltage of 12V and Max Clamping Voltage of 23V. Ideal for transient suppression applications due to its AVALANCHE technology and max power dissipation of 0.38W.

LOW CAPACITANCE, LOW LEAKAGE CURRENT

12.7 V

11.4 V

12 V

23 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G5

e0

20 W

4

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

UNIDIRECTIONAL

.38 W

Not Qualified

5 V

Transient Suppressors

YES

AVALANCHE

Tin/Lead (Sn/Pb)

GULL WING

DUAL

NZQA5V6XV5T3 by Onsemi

NZQA5V6XV5T3

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 5; Surface Mount: YES; Package Shape: RECTANGULAR;

5.88 V

5.32 V

5.6 V

10.5 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F5

e3

100 W

4

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.3 W

Not Qualified

3 V

Transient Suppressors

YES

AVALANCHE

TIN

FLAT

DUAL

NUP1105LT3G by Onsemi

NUP1105LT3G

Onsemi

NUP1105LT3G by Onsemi is a Trans Voltage Suppressor Diode with 2 elements, offering bidirectional polarity and a max clamping voltage of 44V. It has a common cathode configuration, small outline package style, and is suitable for transient suppression applications requiring a breakdown voltage range of 25.7V to 28.4V.

28.4 V

25.7 V

27.05 V

44 V

COMMON CATHODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

TO-236AB

R-PDSO-G3

e3

1

350 W

2

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

Not Qualified

24 V

Transient Suppressors

YES

AVALANCHE

Tin (Sn)

GULL WING

DUAL

40

SD12CT1 by Onsemi

SD12CT1

Onsemi

The Onsemi SD12CT1 is a single bidirectional avalanche diode with 12V max repetitive peak reverse voltage and 350W non-repetitive peak power dissipation. It comes in a small outline package suitable for surface mount applications, providing transient suppression for electronic circuits.

13.3 V

19 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G2

e0

1

350 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

BIDIRECTIONAL

Not Qualified

12 V

Transient Suppressors

YES

AVALANCHE

TIN LEAD

GULL WING

DUAL

ICTE-36RL4G by Onsemi

ICTE-36RL4G

Onsemi

ICTE-36RL4G by Onsemi is a Zener technology Transient Suppression Device with 1500W peak power dissipation and 36V max reverse voltage. It features unidirectional polarity, 65.2V clamping voltage, and is ideal for protecting sensitive electronics from voltage spikes in various applications.

HIGH RELIABILITY

42.4 V

ISOLATED

65.2 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

O-PALF-W2

e3

1500 W

1

2

PLASTIC/EPOXY

ROUND

LONG FORM

260

UNIDIRECTIONAL

5 W

Not Qualified

36 V

Transient Suppressors

NO

ZENER

TIN

WIRE

AXIAL

P6KE200BRLG by Onsemi

P6KE200BRLG

Onsemi

P6KE200BRLG by Onsemi is a 600W Trans Voltage Suppressor Diode with 200V breakdown voltage. It has unidirectional polarity, 171V max repetitive peak reverse voltage, and 274V max clamping voltage. Ideal for transient suppression in electronic circuits.

210 V

190 V

200 V

ISOLATED

274 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-41

O-PALF-W2

e3

600 W

1

2

PLASTIC/EPOXY

ROUND

LONG FORM

260

UNIDIRECTIONAL

5 W

Not Qualified

171 V

Transient Suppressors

NO

AVALANCHE

TIN

WIRE

AXIAL

MR2835SKG by Onsemi

MR2835SKG

Onsemi

MR2835SKG by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 28V breakdown voltage. It features GULL WING terminal form and AVALANCHE technology, suitable for transient suppression applications in small outline packages.

32 V

24 V

28 V

CATHODE

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

O-XXSO-G1

e3

1

1

1

UNSPECIFIED

ROUND

SMALL OUTLINE

260

UNIDIRECTIONAL

Not Qualified

23 V

Transient Suppressors

YES

AVALANCHE

TIN

GULL WING

UNSPECIFIED

NZL6V8AXV3T3G by Onsemi

NZL6V8AXV3T3G

Onsemi

NZL6V8AXV3T3G by Onsemi is a Zener diode with 6.8V nominal reference voltage and 7.14V max breakdown voltage. It has a common anode configuration, 2 elements, and works at a max operating temperature of 150 °C. Ideal for transient suppression in electronic circuits requiring protection against voltage spikes.

7.14 V

6.46 V

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

15 ohm

R-PDSO-F3

e3

1

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.24 W

Not Qualified

6.8 V

5 V

Voltage Reference Diodes

YES

ZENER

TIN

FLAT

DUAL

30

5 %

5 mA

ESD8351XV2T5G by Onsemi

ESD8351XV2T5G

Onsemi

ESD8351XV2T5G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 7.8V max breakdown voltage, ideal for transient suppression applications. It has a small outline package style, matte tin terminal finish, and operates b/w -55 °C to 125°C. Compliant with IEC-61000-4-2 standard, it offers low reverse current of 0.5uA and clamps at 11.2V peak voltage.

ULTRA LOW CAPACITANCE

7.8 V

5.5 V

7 V

11.2 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-2

3.3 V

.5 uA

3.3 V

YES

AVALANCHE

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SZESD8351XV2T5G by Onsemi

SZESD8351XV2T5G

Onsemi

SZESD8351XV2T5G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a 7.8V max breakdown voltage and 11.2V clamping voltage, suitable for transient suppression applications. It features a small outline package style, matte tin terminal finish, and operates b/w -55 to 125 °C temperature range. Ideal for protecting sensitive electronics from voltage spikes in automotive and industrial environments.

ULTRA LOW CAPACITANCE

7.8 V

5.5 V

7 V

11.2 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101, IEC-61000-4-2

3.3 V

.5 uA

3.3 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SZNSP8814MTWTAG by Onsemi

SZNSP8814MTWTAG

Onsemi

SZNSP8814MTWTAG by Onsemi is a transient suppression device with common anode configuration, 4 elements, and max clamping voltage of 15V. It is ideal for protecting electronic circuits from voltage spikes in automotive applications. With a breakdown voltage of 3.5V and reverse current of 0.5uA, it ensures reliable performance in temperatures ranging from -55 °C to 125°C.

LOW CAPACITANCE

5 V

3.2 V

3.5 V

15 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1.1 V

R-PDSO-N8

e3

1

4

8

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-2, 4-5; ISO 10605

3 V

.5 uA

3 V

YES

AVALANCHE

MATTE TIN

NO LEAD

DUAL

30

SZNZL6V8AXV3T1G by Onsemi

SZNZL6V8AXV3T1G

Onsemi

SZNZL6V8AXV3T1G by Onsemi is a Trans Voltage Suppressor Diode with 2 elements, common anode config, and 6.8V breakdown voltage. It is used for transient suppression in applications requiring protection against voltage spikes or surges.

7.14 V

6.46 V

6.8 V

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F3

e3

1

2

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.24 W

AEC-Q101, IEC-61000-4-2

4.5 V

1 uA

4.5 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

NUP3125WTT3G by Onsemi

NUP3125WTT3G

Onsemi

NUP3125WTT3G by Onsemi is a Zener technology Trans Voltage Suppressor Diode with 2 bidirectional elements. It has a max clamping voltage of 60V and breakdown voltage of 39V, making it ideal for transient suppression in electronic circuits. With a package style of small outline and common cathode configuration, it operates b/w -55 to 150 °C temperature range.

35.6 V

39 V

60 V

COMMON CATHODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G3

120 W

2

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

BIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5

32 V

.1 uA

32 V

YES

ZENER

GULL WING

DUAL

NOT SPECIFIED

SZNSP8814LMTWTAG by Onsemi

SZNSP8814LMTWTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 10; Surface Mount: YES; Package Shape: RECTANGULAR;

5 V

3.2 V

3.5 V

15 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1.1 V

R-PDSO-N10

e3

1

4

10

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101, IEC-61000-4-2, 4-5

3 V

.5 uA

3 V

YES

AVALANCHE

MATTE TIN

NO LEAD

DUAL

30

ESD8118MUTAG by Onsemi

ESD8118MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 10; Surface Mount: YES; Package Shape: RECTANGULAR;

ULTRA LOW CAPACITANCE

4 V

5 V

11.4 V

COMMON ANODE, 8 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-N10

1

8

10

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-2

3.3 V

1 uA

3.3 V

YES

AVALANCHE

NICKEL GOLD PALLADIUM

NO LEAD

DUAL

30

SZSL24T1G by Onsemi

SZSL24T1G

Onsemi

SZSL24T1G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a max clamping voltage of 55V. It has a breakdown voltage of 27.85V and can handle a max non-repetitive peak reverse power dissipation of 300W. Ideal for transient suppression applications in automotive electronics and industrial equipment due to its AEC-Q101 compliance and avalanche technology.

LOW CAPACITANCE

29 V

26.7 V

27.85 V

55 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

TO-236

R-PDSO-G3

e3

1

300 W

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.225 W

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

24 V

1 uA

24 V

YES

AVALANCHE

TIN

GULL WING

DUAL

30

TVS4201MR6T1G by Onsemi

TVS4201MR6T1G

Onsemi

TVS4201MR6T1G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 500W power dissipation. It operates b/w -40 to 125 °C and has a breakdown voltage of 6V. Ideal for transient suppression in electronic circuits, it meets IEC-61000-4-2, 4-4, 4-5 standards.

6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G6

e3

1

500 W

1

6

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5

5 V

YES

AVALANCHE

MATTE TIN

GULL WING

DUAL

30

ESD5111PFCT5G by Onsemi

ESD5111PFCT5G

Onsemi

ESD5111PFCT5G by Onsemi is a single bidirectional avalanche diode with 5V breakdown voltage. It has a max clamping voltage of 6.5V and operates b/w -55 to 125 °C. Ideal for transient suppression in electronic circuits, meeting IEC-61000-4-2 standards.

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.5 V

3.68 V

5 V

6.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

BIDIRECTIONAL

IEC-61000-4-2

3.3 V

.1 uA

3.3 V

YES

AVALANCHE

NO LEAD

BOTTOM

30

SZPACDN004SR by Onsemi

SZPACDN004SR

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

13 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

.95 V

R-PDSO-G3

e3

1

1

4

85 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101, IEC-61000-4-2

YES

AVALANCHE

TIN

GULL WING

DUAL

30

NUP2125WTT3G by Onsemi

NUP2125WTT3G

Onsemi

NUP2125WTT3G by Onsemi is a Transient Suppression Device with 2 elements in common anode configuration. It has a breakdown voltage range of 26.2-32V, operates b/w -55 to 150 °C, and meets IEC standards for surge protection. Ideal for applications requiring bidirectional avalanche diodes in compact SMD packages.

32 V

26.2 V

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G3

e3

1

200 W

2

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

BIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5

24 V

YES

AVALANCHE

Matte Tin (Sn) - annealed

GULL WING

DUAL

NOT SPECIFIED

ESD7102BT1G by Onsemi

ESD7102BT1G

Onsemi

ESD7102BT1G by Onsemi is a Transient Suppression Device with 2 ELEMENTS, COMMON ANODE config, and 16V max repetitive peak reverse voltage. It operates b/w -55 to 150 °C and has a max clamping voltage of 55V. Ideal for protecting sensitive electronics from transient voltage spikes in various applications.

16.5 V

55 V

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G3

e3

1

2

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-2

16 V

1 uA

5 V

YES

AVALANCHE

MATTE TIN

GULL WING

DUAL

30

SZESD7102BT1G by Onsemi

SZESD7102BT1G

Onsemi

SZESD7102BT1G by Onsemi is a Transient Suppression Device with 2 common anode elements. It has a reverse test voltage of 5V, max clamping voltage of 55V, and operates b/w -55 to 150 °C. Ideal for applications requiring protection against transient voltage spikes in electronic circuits.

16.5 V

55 V

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G3

e3

1

2

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-2

16 V

1 uA

5 V

YES

AVALANCHE

MATTE TIN

GULL WING

DUAL

30

SZMA3075WALT1G by Onsemi

SZMA3075WALT1G

Onsemi

SZMA3075WALT1G by Onsemi is a Zener diode with 7.5V breakdown voltage, 15W peak power dissipation, and 60uA reverse current. Commonly used in transient suppression applications due to its small outline package and AEC-Q101 reference standard compliance.

LOW CAPACITANCE

7.9 V

7.2 V

7.5 V

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

.9 V

TO-236

R-PDSO-G3

e3

1

15 W

2

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.225 W

AEC-Q101, IEC-61000-4-2

6.5 V

60 uA

6.5 V

YES

ZENER

MATTE TIN

GULL WING

DUAL

30

SZNZL5V6AXV3T1G by Onsemi

SZNZL5V6AXV3T1G

Onsemi

SZNZL5V6AXV3T1G by Onsemi is a Transient Suppression Device with 5.6V Breakdown Voltage, 5uA Reverse Current, and AVALANCHE technology. Commonly used for surge protection in automotive electronics due to its AEC-Q101 compliance and compact SMALL OUTLINE package.

5.88 V

5.32 V

5.6 V

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F3

e3

1

2

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.24 W

AEC-Q101, IEC-61000-4-2

3 V

5 uA

3 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

NSPU3051N2T5G by Onsemi

NSPU3051N2T5G

Onsemi

NSPU3051N2T5G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 5.7V min breakdown voltage and 9.1V max breakdown voltage. It operates b/w -65°C to 150°C, complies with IEC-61000-4-2, 4-5 standards, and is ideal for transient suppression applications.

EXCELLENT CLAMPING CAPABILITY

9.1 V

5.7 V

9.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

e4

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

UNIDIRECTIONAL

IEC-61000-4-2, 4-5

5.5 V

1 uA

5.5 V

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

NSP8814MUTAG by Onsemi

NSP8814MUTAG

Onsemi

NSP8814MUTAG by Onsemi is a transient suppression device with 4 common anode elements. It has a breakdown voltage of 3.5V, reverse current of 0.5uA, and operates b/w -55 to 125 °C. Ideal for applications requiring protection against voltage transients as per IEC-61000-4-2 and 4-5 standards.

LOW CAPACITANCE

5 V

3.2 V

3.5 V

15 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1.1 V

R-PDSO-N8

e4

1

4

8

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-2, 4-5

3 V

.5 uA

3 V

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

NSP8818MUTAG by Onsemi

NSP8818MUTAG

Onsemi

NSP8818MUTAG by Onsemi is a Trans Voltage Suppressor Diode with 8 elements in common anode configuration. It has a breakdown voltage of 3.5V, reverse current of 0.5uA, and clamping voltage of 15V. Ideal for transient suppression applications meeting IEC-61000-4-2, 4-5 standards.

LOW CAPACITANCE

5 V

3.2 V

3.5 V

15 V

COMMON ANODE, 8 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1.1 V

R-PDSO-N10

e4

1

8

10

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-2, 4-5

3 V

.5 uA

3 V

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

ESD7361XV2T5G by Onsemi

ESD7361XV2T5G

Onsemi

ESD7361XV2T5G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 16V max repetitive peak reverse voltage and 34V max clamping voltage. It operates b/w -55 to 125 °C, complies with IEC-61000-4-2, 4-4, 4-5 standards, and is ideal for transient suppression in electronic circuits.

LOW CAPACITANCE, ULTRA LOW CAPACITANCE

16.5 V

34 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5; ISO 10605

16 V

1 uA

15 V

YES

AVALANCHE

Matte Tin (Sn) - annealed

FLAT

DUAL

30

ESDM3032MXT5G by Onsemi

ESDM3032MXT5G

Onsemi

ESDM3032MXT5G by Onsemi is a single bidirectional avalanche diode with 4.9V breakdown voltage, 0.1uA reverse current, and 8.5V clamping voltage. It is used for transient suppression in applications requiring protection against voltage spikes and surges.

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

5.7 V

4.1 V

4.9 V

8.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

.25 W

IEC-61000-4-2, 4-5

3.3 V

.1 uA

3.3 V

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

SZESD7351XV2T5G by Onsemi

SZESD7351XV2T5G

Onsemi

SZESD7351XV2T5G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 3.3V reverse test voltage and 10V max clamping voltage. It is designed for transient suppression applications in automotive electronics, meeting AEC-Q101 and IEC-61000-4-2, 4-5 standards. The device operates b/w -55 to 150 °C with a small outline package style suitable for surface mount assembly.

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

5 V

10 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.15 W

AEC-Q101; IEC-61000-4-2, 4-5

3.3 V

.05 uA

3.3 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SZESD7361XV2T5G by Onsemi

SZESD7361XV2T5G

Onsemi

SZESD7361XV2T5G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a max reverse current of 1 uA and a min breakdown voltage of 16.5 V. It is designed for transient suppression applications in electronics, offering high reliability with an operating temperature range from -55 to 125 °C.

LOW CAPACITANCE, ULTRA LOW CAPACITANCE

16.5 V

34 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-2, 4-4, 4-5; ISO 10605

16 V

1 uA

15 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SZESD7371XV2T5G by Onsemi

SZESD7371XV2T5G

Onsemi

SZESD7371XV2T5G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a max clamping voltage of 20V. It operates in temperatures ranging from -55 to 150 °C and has a reverse test voltage of 5.3V. Ideal for transient suppression applications, this device meets AEC-Q101 and IEC-61000-4-2, 4-5 standards.

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

7 V

20 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.3 W

AEC-Q101; IEC-61000-4-2, 4-5

5.3 V

.05 uA

5.3 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

NUP1128WTT1G by Onsemi

NUP1128WTT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

35.5 V

27.5 V

31 V

55 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G3

e3

1

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

165 W

IEC-61000-4-2, 4-4, 4-5; ISO 7637-1, -3

26.5 V

.1 uA

26.5 V

YES

AVALANCHE

MATTE TIN

GULL WING

DUAL

30

NUP2128WTT1G by Onsemi

NUP2128WTT1G

Onsemi

NUP2128WTT1G by Onsemi is a Transient Suppression Device with 2 bidirectional elements. It has a breakdown voltage of 31V, clamping voltage of 55V, and can handle up to 165W power dissipation. Ideal for surge protection in automotive electronics due to its avalanche technology and compliance with IEC and ISO standards.

35.5 V

27.5 V

31 V

55 V

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G3

e3

1

165 W

2

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

165 W

IEC-61000-4-2, 4-4, 4-5; ISO 7637-1, -3

26.5 V

.1 uA

26.5 V

YES

AVALANCHE

MATTE TIN

GULL WING

DUAL

30

SZNUPH1128HT1G by Onsemi

SZNUPH1128HT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

35.5 V

27.5 V

31 V

55 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G2

e3

1

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

165 W

AEC-Q101; IEC-61000-4-2, 4-4, 4-5; ISO 7637-1, -3

26.5 V

.1 uA

26.5 V

YES

AVALANCHE

MATTE TIN

GULL WING

DUAL

30

ESDL1531MX4T5G by Onsemi

ESDL1531MX4T5G

Onsemi

ESDL1531MX4T5G by Onsemi is a single transient suppression device with a breakdown voltage of 7.05V and max reverse current of 1uA. It is used for surge protection in applications requiring bidirectional polarity, such as IEC-61000-4-2, 4-5 compliant systems.

LOW CAPACITANCE

8.6 V

5.5 V

7.05 V

6.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

BIDIRECTIONAL

IEC-61000-4-2, 4-5

3.3 V

1 uA

3.3 V

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

SZMMBZ4252T3G by Onsemi

SZMMBZ4252T3G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;

TRANS VOLTAGE SUPPRESSOR DIODE

e3

1

260

MATTE TIN

30

NUP4114UCLW1T1G by Onsemi

NUP4114UCLW1T1G

Onsemi

NUP4114UCLW1T1G by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 6.5V Breakdown Voltage, 1uA Reverse Current, and 10V Clamping Voltage. Ideal for transient suppression in electronics to protect against voltage spikes. Operates b/w -40°C to 125°C, complies with IEC-61000-4-2 standard, and features GULL WING terminals in a SMALL OUTLINE package.

ULTRA LOW CAPACITANCE

5.5 V

6.5 V

10 V

COMPLEX

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G6

5

6

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-2

5.5 V

1 uA

5.5 V

YES

AVALANCHE

GULL WING

DUAL

10

SZNSP8818MUTAG by Onsemi

SZNSP8818MUTAG

Onsemi

SZNSP8818MUTAG by Onsemi is a transient suppression device with 8 common anode elements. It features a breakdown voltage of 3.5V, max reverse current of 0.5uA, and max clamping voltage of 15V. Ideal for applications requiring protection against voltage transients in automotive and industrial environments.

LOW CAPACITANCE

5 V

3.2 V

3.5 V

15 V

COMMON ANODE, 8 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1.1 V

R-PDSO-N10

1

8

10

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-2, 4-5

3 V

.5 uA

3 V

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SZNSP8814MUTAG by Onsemi

SZNSP8814MUTAG

Onsemi

SZNSP8814MUTAG by Onsemi is a transient suppression device with 4 common anode elements. It has a breakdown voltage of 3.5V and max reverse current of 0.5uA, making it ideal for applications requiring protection against voltage spikes in electronic circuits. With a package style of small outline and surface mount capability, it offers reliable performance in a compact form factor.

LOW CAPACITANCE

5 V

3.2 V

3.5 V

15 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1.1 V

R-PDSO-N8

1

4

8

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-2, 4-5

3 V

.5 uA

3 V

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

NSPM6201MUTBG by Onsemi

NSPM6201MUTBG

Onsemi

NSPM6201MUTBG by Onsemi is a single bidirectional transient suppression device with 20-27V breakdown voltage. It operates b/w -65 to 150 °C and has a max clamping voltage of 39V. Ideal for protecting electronic circuits from voltage spikes in various applications.

27 V

21 V

39 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-PDSO-N3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

BIDIRECTIONAL

IEC-61000-4-2, 4-5

20 V

1 uA

20 V

YES

AVALANCHE

NO LEAD

DUAL