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SZNSP8818MUTAG

Onsemi

SZNSP8818MUTAG by Onsemi

SZNSP8818MUTAG by Onsemi is a transient suppression device with 8 common anode elements. It features a breakdown voltage of 3.5V, max reverse current of 0.5uA, and max clamping voltage of 15V. Ideal for applications requiring protection against voltage transients in automotive and industrial environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 28,000 parts In-Stock

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Vyrian

USA . 5,967 parts In-Stock

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Digiode

USA . 1,761 parts In-Stock

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AZTECH Wire

Italy . 789 parts In-Stock

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$10.410

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Kulean Microsystems

USA . 6,484 parts In-Stock

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Problanco Electronics

Mexico . 6,065 parts In-Stock

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TANS Electronics

Latvia . 5,793 parts In-Stock

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SupplyDigital Components

Austria . 3,255 parts In-Stock

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Corphita

USA . 1,347 parts In-Stock

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Corohmni

South Africa . 480 parts In-Stock

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UHIMA Technologies

Türkiye . 325 parts In-Stock

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Overview

Enhance your electronic devices with the SZNSP8818MUTAG transient suppression device from Onsemi. Designed with top-notch quality and reliability, this product offers superior protection against voltage spikes and surges. Ideal for a wide range of applications, this common anode configuration with 8 elements provides peace of mind for your valuable equipment. With a compact package style and advanced technology, Onsemi ensures that you get the best performance and value out of your investment. Upgrade to the SZNSP8818MUTAG today and safeguard your devices from damaging electrical events.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and resistance to environmental factors, making the device suitable for a wide range of applications.

Nominal Breakdown Voltage: 3.5 V

The high breakdown voltage ensures reliable protection against transient voltage spikes, safeguarding sensitive electronic components in the circuit.

Maximum Reverse Current: 0.5 uA

Low reverse current helps in maintaining efficient operation and prolonging the lifespan of the device.

Maximum Operating Temperature: 125 °C

This wide operating temperature range allows the device to function effectively in harsh environmental conditions.

Technology: AVALANCHE

The avalanche technology ensures fast response time and high surge handling capability, making the device an excellent choice for transient suppression.

Technical Specifications

Transient Suppression Devices SZNSP8818MUTAG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

5 V

Minimum Breakdown Voltage:

3.2 V

Nominal Breakdown Voltage:

3.5 V

Maximum Clamping Voltage:

15 V

Config:

COMMON ANODE, 8 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PDSO-N10

Moisture Sensitivity Level (MSL):

1

No. of Elements:

8

No. of Terminals:

10

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

3 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Trade Compliance

SZNSP8818MUTAG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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