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SZNS6A30AFT3G

Onsemi

SZNS6A30AFT3G by Onsemi

SZNS6A30AFT3G by Onsemi is a Zener diode with 500W power dissipation, 35.05V breakdown voltage, and 5uA reverse current. Ideal for transient suppression in automotive electronics due to AEC-Q101 compliance and unidirectional polarity.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,814 parts In-Stock

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Vyrian

USA . 67 parts In-Stock

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Problanco Electronics

Mexico . 8,026 parts In-Stock

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SupplyDigital Components

Austria . 7,475 parts In-Stock

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Kulean Microsystems

USA . 5,902 parts In-Stock

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TANS Electronics

Latvia . 1,686 parts In-Stock

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Corphita

USA . 1,350 parts In-Stock

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UHIMA Technologies

Türkiye . 897 parts In-Stock

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Corohmni

South Africa . 269 parts In-Stock

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Overview

Experience superior protection against transient voltage spikes with the SZNS6A30AFT3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Transient Suppression Devices that offer reliable safeguarding for a wide range of applications. From automotive to industrial uses, this product stands out for its value, benefits, and advantages it provides to customers. Trust Onsemi for peace of mind knowing your electronic systems are well-protected with the SZNS6A30AFT3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the device lightweight and durable, ideal for applications where weight and size are important.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

With a high peak power dissipation capacity, the device can effectively handle transient surges and protect sensitive components in a circuit.

Nominal Breakdown Voltage: 35.05 V

The precise breakdown voltage ensures reliable protection against overvoltage conditions, safeguarding connected devices.

Maximum Reverse Current: 5 uA

The low reverse current helps in minimizing power losses and ensuring efficient operation of the device.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the device to function effectively in various environmental conditions without compromising on performance.

Technical Specifications

Transient Suppression Devices SZNS6A30AFT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE

Maximum Breakdown Voltage:

36.8 V

Minimum Breakdown Voltage:

33.3 V

Nominal Breakdown Voltage:

35.05 V

Maximum Clamping Voltage:

48.4 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

30 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZNS6A30AFT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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