Loading...

SZNS6A36AFT3G

Onsemi

SZNS6A36AFT3G by Onsemi

SZNS6A36AFT3G by Onsemi is a Zener diode with 500W peak power dissipation, 42.1V breakdown voltage, and 5uA reverse current. It is used for transient suppression in applications requiring protection against voltage spikes and surges.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,465 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,465

-

-

-

-

Digiode

USA . 137 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

137

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,150 parts In-Stock

1+ parts

$3.010

100+ parts

$2.935

1k+ parts

$2.920

10k+ parts

-

1,150

$3.010

$2.935

$2.920

-

Component Stockers USA

USA . 360 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

360

$99.990

-

-

-

TANS Electronics

Latvia . 7,482 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,482

-

-

-

-

SupplyDigital Components

Austria . 7,135 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,135

-

-

-

-

Kulean Microsystems

USA . 3,610 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,610

-

-

-

-

Problanco Electronics

Mexico . 1,965 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,965

-

-

-

-

Corphita

USA . 1,534 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,534

-

-

-

-

Corohmni

South Africa . 440 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

440

-

-

-

-

UHIMA Technologies

Türkiye . 381 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

381

-

-

-

-

Overview

Looking for reliable transient suppression devices? Look no further than the SZNS6A36AFT3G by Onsemi! As a trusted manufacturer in the industry, Onsemi delivers top-quality products that provide superior protection against voltage spikes. Ideal for a variety of applications, this product offers customers peace of mind knowing their electronics are safeguarded. With a maximum clamping voltage of 58.1V and a maximum power dissipation of 0.5W, the SZNS6A36AFT3G is the perfect solution for your transient suppression needs. Trust Onsemi to keep your devices safe and secure!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and thermal resistance, making it ideal for long-term use in various environments.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

The high power dissipation capability ensures that the device can handle sudden surges and spikes in electrical currents without being damaged, providing reliable transient suppression.

Nominal Breakdown Voltage: 42.1 V

The breakdown voltage of 42.1 V ensures that the device can effectively suppress excess voltage levels and protect connected circuits or components.

Maximum Reverse Current: 5 uA

The low reverse current of 5 uA indicates minimal leakage and current flow in the reverse direction, enhancing overall efficiency and performance of the transient suppression device.

Technology: ZENER

The Zener technology used in this device enables precise voltage regulation and reliable transient suppression, ensuring consistent and effective protection against overvoltage conditions.

Maximum Clamping Voltage: 58.1 V

The high clamping voltage capability of 58.1 V ensures that excessive voltage spikes are limited to a safe level, preventing damage to sensitive components or circuits during transient events.

Technical Specifications

Transient Suppression Devices SZNS6A36AFT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE

Maximum Breakdown Voltage:

44.2 V

Minimum Breakdown Voltage:

40 V

Nominal Breakdown Voltage:

42.1 V

Maximum Clamping Voltage:

58.1 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

36 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

36 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZNS6A36AFT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19