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SZNSQA6V8AW5T2G

Onsemi

SZNSQA6V8AW5T2G by Onsemi

SZNSQA6V8AW5T2G by Onsemi is a Transient Suppression Device with 4 common anode elements. It has a max power dissipation of 20W, breakdown voltage of 6.8V, and unidirectional polarity. Ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

$0.398

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 15,912 parts In-Stock

1+ parts

$0.660

100+ parts

$0.259

1k+ parts

$0.175

10k+ parts

-

15,912

$0.660

$0.259

$0.175

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Flip Electronics (Authorized)

USA . 2,900 parts In-Stock

1+ parts

-

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2,900

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Rochester

USA . 86 parts In-Stock

1+ parts

-

100+ parts

$0.136

1k+ parts

$0.113

10k+ parts

$0.101

86

-

$0.136

$0.113

$0.101

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,196 parts In-Stock

1+ parts

$0.105

100+ parts

-

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1,196

$0.105

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Nova Conductors

Japan . 75 parts In-Stock

1+ parts

$0.153

100+ parts

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75

$0.153

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Chip Stock

USA . 61,000 parts In-Stock

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61,000

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NAC Semi

USA . 12,000 parts In-Stock

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$0.144

12,000

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-

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$0.144

Vyrian

USA . 8,033 parts In-Stock

1+ parts

-

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8,033

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Flip Electronics

USA . 2,900 parts In-Stock

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2,900

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 288 parts In-Stock

1+ parts

$0.080

100+ parts

-

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288

$0.080

-

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Semicontronic

India . 7,905 parts In-Stock

1+ parts

$0.094

100+ parts

$0.092

1k+ parts

$0.091

10k+ parts

-

7,905

$0.094

$0.092

$0.091

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Ampacity Inc.

Singapore . 7,876 parts In-Stock

1+ parts

$0.094

100+ parts

-

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7,876

$0.094

-

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Corphita

USA . 1,849 parts In-Stock

1+ parts

$0.100

100+ parts

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1,849

$0.100

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.106

100+ parts

$0.096

1k+ parts

$0.087

10k+ parts

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500

$0.106

$0.096

$0.087

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Corohmni

South Africa . 378 parts In-Stock

1+ parts

$0.111

100+ parts

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378

$0.111

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.150

100+ parts

-

1k+ parts

$0.144

10k+ parts

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100

$0.150

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$0.144

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Continental Prestige Electronics

USA . 2,890 parts In-Stock

1+ parts

$0.153

100+ parts

-

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$0.150

2,890

$0.153

-

-

$0.150

Argo Parts USA

USA . 967 parts In-Stock

1+ parts

$0.153

100+ parts

-

1k+ parts

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10k+ parts

$0.148

967

$0.153

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$0.148

Infinite Electronics LLP (Excess)

. 81,010 parts In-Stock

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81,010

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Kulean Microsystems

USA . 8,391 parts In-Stock

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8,391

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GreenTree Electronics

Israel . 6,000 parts In-Stock

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6,000

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Problanco Electronics

Mexico . 4,129 parts In-Stock

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4,129

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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$0.150

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3,000

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$0.150

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SupplyDigital Components

Austria . 2,801 parts In-Stock

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2,801

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UHIMA Technologies

Türkiye . 953 parts In-Stock

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953

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TANS Electronics

Latvia . 952 parts In-Stock

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952

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Overview

Looking for reliable transient suppression devices? Look no further than the SZNSQA6V8AW5T2G by Onsemi. With a reputation for high-quality manufacturing, this product offers unmatched protection against voltage spikes and surges. Ideal for a wide range of applications, this common anode device with four elements is designed to provide peace of mind for your electronic systems. Trust Onsemi to deliver the value, benefits, and advantages you need for your next project.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the device, making it suitable for various environments.

Config:

COMMON ANODE, 4 ELEMENTS - This configuration allows for efficient suppression of transient voltages across the four elements, ensuring reliable performance.

Surface Mount:

YES - The surface mount feature makes installation easy and saves space on the PCB, ideal for compact electronic designs.

Maximum Non Repetitive Peak Reverse Power Dissipation:

20 W - With a high power dissipation capability, this device can effectively handle sudden voltage spikes without damage.

Nominal Breakdown Voltage:

6.8 V - The breakdown voltage ensures that the device activates at the specified voltage, providing protection against excessive voltages.

Maximum Reverse Current:

1 uA - The low reverse current minimizes power loss and improves efficiency in suppressing transient voltage spikes.

Package Shape:

RECTANGULAR - The rectangular shape allows for easy integration into electronic circuits, optimizing space usage.

Reverse Test Voltage:

5 V - The reverse test voltage ensures that the device meets specifications for reliable performance under specified conditions.

No. of Terminals:

5 - Having five terminals provides flexibility in connection options, allowing for versatile application possibilities.

Package Style (Meter):

SMALL OUTLINE - The small outline package style saves space and makes the device suitable for compact electronic devices.

Maximum Operating Temperature:

125 °C - With a high operating temperature range, this device can withstand harsh environmental conditions without compromising performance.

Minimum Operating Temperature:

40 °C - The low minimum operating temperature allows the device to function effectively in cold environments.

Terminal Finish:

MATTE TIN - The matte tin finish on the terminals provides good conductivity and corrosion resistance for long-lasting performance.

Terminal Position:

DUAL - The dual terminal position offers stability and reliability in connecting the device to the circuit.

Maximum Power Dissipation:

0.38 W - This device has a low power dissipation, making it energy-efficient and suitable for battery-powered applications.

Minimum Breakdown Voltage:

6.4 V - The minimum breakdown voltage ensures reliable activation of the device at the specified voltage threshold.

Maximum Time At Peak Reflow Temperature (s):

30 - The defined reflow temperature and time ensure proper soldering of the device during installation, preventing damage.

Peak Reflow Temperature °C:

260 - The peak reflow temperature allows for safe and effective soldering of the device onto the PCB.

Maximum Breakdown Voltage:

7.1 V - The high breakdown voltage provides increased protection against transient voltage spikes, enhancing the device's reliability.

Reference Standard:

IEC-61000-4-2 - This device meets international standards for transient suppression, ensuring quality and performance.

Diode Type:

TRANS VOLTAGE SUPPRESSOR DIODE - This diode type is specifically designed for transient voltage suppression, making it an ideal choice for protection applications.

Technology:

AVALANCHE - The avalanche technology used in this device allows for rapid response to transient voltage spikes, effectively suppressing them.

Terminal Form:

GULL WING - The gull wing terminal form provides secure connectivity and ease of soldering during installation.

No. of Elements:

4 - With four elements, this device can efficiently suppress transient voltages across multiple paths, improving overall protection.

Maximum Repetitive Peak Reverse Voltage:

5 V - The high repetitive peak reverse voltage rating ensures that the device can handle repeated voltage spikes without failure.

Polarity:

UNIDIRECTIONAL - The unidirectional polarity ensures that the device only conducts in one direction, providing effective transient voltage suppression.

Maximum Clamping Voltage:

13 V - With a maximum clamping voltage of 13 V, this device can limit transient voltages to safe levels, protecting sensitive components.

Diode Element Material:

SILICON - The silicon material used in the diode element provides high reliability and performance in transient suppression applications.

Technical Specifications

Transient Suppression Devices SZNSQA6V8AW5T2G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.1 V

Minimum Breakdown Voltage:

6.4 V

Nominal Breakdown Voltage:

6.8 V

Maximum Clamping Voltage:

13 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

20 W

No. of Elements:

4

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.38 W

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

5 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZNSQA6V8AW5T2G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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