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SZNS6A18AFT3G

Onsemi

SZNS6A18AFT3G by Onsemi

SZNS6A18AFT3G by Onsemi is a Zener diode with 500W peak power dissipation, 21.05V breakdown voltage, and 5uA reverse current. Ideal for transient suppression in automotive electronics due to AEC-Q101 compliance and unidirectional polarity.

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Kulean Microsystems

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TANS Electronics

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UHIMA Technologies

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Overview

Discover the superior protection offered by the Onsemi SZNS6A18AFT3G Transient Suppression Device. Manufactured by Onsemi, a leader in electronic components, this product ensures high-quality performance and reliability. Ideal for a wide range of applications, this single-config, surface-mount device provides unmatched value and benefits to customers. With its advanced technology and maximum operating temperature of 150 °C, the SZNS6A18AFT3G offers peace of mind and protection against transient voltage spikes. Trust Onsemi for top-of-the-line solutions that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the device lightweight and durable, suitable for various applications.

Config: SINGLE

The single configuration simplifies installation and reduces complexity in circuit design.

Surface Mount: YES

Being surface mountable allows for easy integration onto PCBs, saving space and improving efficiency.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

The high power dissipation capability ensures the device can handle surges and spikes effectively, protecting connected electronics.

Nominal Breakdown Voltage: 21.05 V

The precise breakdown voltage helps in accurately suppressing excess voltage, preventing damage to sensitive components.

Maximum Reverse Current: 5 uA

The low reverse current ensures minimal leakage and efficient operation of the transient suppression device.

Package Shape: RECTANGULAR

The rectangular shape provides a compact form factor, making it easy to fit into various system designs.

Reverse Test Voltage: 18 V

The reverse test voltage rating indicates the maximum voltage the device can withstand in the reverse direction, ensuring reliable performance.

No. of Terminals: 2

Having two terminals simplifies the connections and enhances ease of installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and facilitates high-density mounting.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the device to function effectively in various environments and applications.

Minimum Operating Temperature: -65 °C

The wide operating temperature range ensures the device remains operational even in harsh conditions or extreme temperatures.

Terminal Position: DUAL

The dual terminal position offers flexibility in connecting the device to the circuit, catering to different installation requirements.

Maximum Power Dissipation: 0.5 W

The low power dissipation helps in efficient energy management and prevents overheating of the device.

Minimum Breakdown Voltage: 20 V

The minimum breakdown voltage sets the threshold for effective voltage suppression, safeguarding connected equipment.

Maximum Breakdown Voltage: 22.1 V

The high maximum breakdown voltage ensures reliable protection against voltage surges and spikes.

Reference Standard: AEC-Q101; IEC-61000-4-2

Compliance with industry standards ensures the device meets quality requirements and performs reliably in demanding applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The type of diode used enables efficient voltage suppression and protection of electronic components from transient events.

Maximum Forward Voltage (VF): 3.5 V

The low forward voltage drop minimizes power loss and ensures efficient operation of the transient suppression device.

Technology: ZENER

Utilizing Zener technology provides accurate voltage regulation and effective transient suppression capabilities.

Terminal Form: FLAT

The flat terminal form simplifies soldering and connection of the device, enhancing ease of installation.

Maximum Repetitive Peak Reverse Voltage: 18 V

The high repetitive peak reverse voltage rating ensures long-term reliability and continuous protection against reverse voltage.

Polarity: UNIDIRECTIONAL

The unidirectional polarity of the device allows for effective suppression of voltage spikes in one direction, safeguarding the circuit.

Maximum Clamping Voltage: 29.2 V

The maximum clamping voltage level provides a threshold for limiting voltage spikes and maintaining the safe operating range of electronic devices.

Diode Element Material: SILICON

The use of silicon material in the diode element ensures high performance, reliability, and longevity of the transient suppression device.

Technical Specifications

Transient Suppression Devices SZNS6A18AFT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE

Maximum Breakdown Voltage:

22.1 V

Minimum Breakdown Voltage:

20 V

Nominal Breakdown Voltage:

21.05 V

Maximum Clamping Voltage:

29.2 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JESD-30 Code:

R-PDSO-F2

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

18 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

18 V

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SZNS6A18AFT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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