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SZNSP4201MR6T1G

Onsemi

SZNSP4201MR6T1G by Onsemi

SZNSP4201MR6T1G by Onsemi is a unidirectional avalanche diode with 500W peak power dissipation and 1uA reverse current. Ideal for transient suppression in automotive electronics, it has a max clamping voltage of 12V and operates b/w -40 to 125°C. AEC-Q100 and IEC-61000-4 certified for reliability in harsh environments.

Median Price

$0.202

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 100 parts In-Stock

1+ parts

$0.159

100+ parts

$0.151

1k+ parts

-

10k+ parts

-

100

$0.159

$0.151

-

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Chip1Stop

Japan . 2,725 parts In-Stock

1+ parts

-

100+ parts

$0.245

1k+ parts

$0.236

10k+ parts

$0.208

2,725

-

$0.245

$0.236

$0.208

Verical

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.151

1k+ parts

-

10k+ parts

-

100

-

$0.151

-

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Rochester

USA . 10 parts In-Stock

1+ parts

-

100+ parts

$0.326

1k+ parts

$0.271

10k+ parts

$0.241

10

-

$0.326

$0.271

$0.241

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,679 parts In-Stock

1+ parts

$0.254

100+ parts

-

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1,679

$0.254

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.375

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$0.375

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Chip Stock

USA . 135,500 parts In-Stock

1+ parts

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135,500

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Flip Electronics

USA . 30,000 parts In-Stock

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30,000

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NAC Semi

USA . 18,000 parts In-Stock

1+ parts

-

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$0.392

18,000

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$0.392

Vyrian

USA . 3,293 parts In-Stock

1+ parts

-

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3,293

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,578 parts In-Stock

1+ parts

$0.120

100+ parts

-

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1,578

$0.120

-

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Ampacity Inc.

Singapore . 3,674 parts In-Stock

1+ parts

$0.191

100+ parts

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3,674

$0.191

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Semicontronic

India . 3,567 parts In-Stock

1+ parts

$0.191

100+ parts

$0.186

1k+ parts

$0.185

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3,567

$0.191

$0.186

$0.185

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Corohmni

South Africa . 480 parts In-Stock

1+ parts

$0.226

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480

$0.226

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Corphita

USA . 1,362 parts In-Stock

1+ parts

$0.240

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1,362

$0.240

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Advanced Electronics

New Zealand . 89 parts In-Stock

1+ parts

$0.314

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$0.314

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$0.314

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89

$0.314

$0.314

$0.314

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Argo Parts USA

USA . 2,382 parts In-Stock

1+ parts

$0.329

100+ parts

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$0.320

2,382

$0.329

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$0.320

Continental Prestige Electronics

USA . 71 parts In-Stock

1+ parts

$0.329

100+ parts

-

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10k+ parts

$0.323

71

$0.329

-

-

$0.323

Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

$0.375

100+ parts

$0.356

1k+ parts

$0.338

10k+ parts

$0.334

100

$0.375

$0.356

$0.338

$0.334

Kulean Microsystems

USA . 6,570 parts In-Stock

1+ parts

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6,570

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TANS Electronics

Latvia . 3,683 parts In-Stock

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3,683

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Problanco Electronics

Mexico . 3,400 parts In-Stock

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3,400

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Futuretech Components

Singapore . 3,000 parts In-Stock

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3,000

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SupplyDigital Components

Austria . 987 parts In-Stock

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987

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UHIMA Technologies

Türkiye . 196 parts In-Stock

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196

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Overview

Elevate your electronics with the SZNSP4201MR6T1G by Onsemi, a top-of-the-line Transient Suppression Device that guarantees quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this product offers superior protection against voltage spikes and surges. Perfect for a wide range of applications, this device ensures the safety and longevity of your electronic devices. Experience peace of mind knowing that your equipment is safeguarded with the SZNSP4201MR6T1G by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

Can handle high levels of power to protect against transient surges.

Maximum Reverse Current: 1 uA

Low reverse current ensures minimal leakage and efficient operation.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for various environments.

Minimum Operating Temperature: -40 °C

Can function in cold temperatures, providing reliability in different conditions.

Polarity: UNIDIRECTIONAL

Specific polarity ensures protection in one direction, preventing damage.

Technology: AVALANCHE

Avalanche technology allows for rapid response to over-voltage conditions.

Technical Specifications

Transient Suppression Devices SZNSP4201MR6T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

6 V

Maximum Clamping Voltage:

12 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q100; IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

5 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZNSP4201MR6T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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