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SZNS6A11AFT3G

Onsemi

SZNS6A11AFT3G by Onsemi

SZNS6A11AFT3G by Onsemi is a Zener diode with 500W peak power dissipation, 12.85V breakdown voltage, and 5uA reverse current. Ideal for transient suppression in automotive electronics due to AEC-Q101 compliance and unidirectional polarity.

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Corphita

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Overview

Enhance your electronic devices with the SZNS6A11AFT3G by Onsemi, a top-tier Transient Suppression Device designed to protect against voltage spikes and surges. Manufactured by Onsemi, a trusted industry leader, this device offers superior quality and reliability. Ideal for a wide range of applications, this single-configured product provides maximum protection with its high breakdown voltage and low reverse current. With Onsemi's commitment to excellence, rest assured that your electronics are safeguarded while experiencing peak performance. Choose the SZNS6A11AFT3G for unrivaled value, benefits, and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures lightweight and durable construction, making it ideal for various applications.

Config: SINGLE

The single configuration simplifies installation and reduces complexity in the circuit design.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

High power dissipation capability ensures protection against transient voltage spikes and surges, increasing reliability.

Nominal Breakdown Voltage: 12.85 V

The nominal breakdown voltage ensures effective suppression of overvoltage conditions to protect sensitive electronics.

Maximum Reverse Current: 5 uA

Low reverse current helps minimize power loss and improves overall efficiency of the transient suppression device.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into various electronic devices and equipment.

Reverse Test Voltage: 11 V

The reverse test voltage indicates the maximum voltage that can be applied in the reverse direction without causing damage to the device.

No. of Terminals: 2

Dual terminals provide easy connectivity and installation in the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact design in electronic applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance in various environmental conditions.

Minimum Operating Temperature: -65 °C

Wide operating temperature range allows for use in extreme temperature conditions without compromising performance.

Terminal Position: DUAL

Dual terminal positions provide flexibility in mounting and installation options.

Maximum Power Dissipation: 0.5 W

Efficient power dissipation capability ensures protection against transient voltage spikes while minimizing power loss.

Minimum Breakdown Voltage: 12.2 V

The minimum breakdown voltage ensures reliable overvoltage protection for connected devices.

Maximum Breakdown Voltage: 13.5 V

The maximum breakdown voltage indicates the upper limit of voltage protection offered by the device.

Reference Standard: AEC-Q101; IEC-61000-4-2

Compliance with industry standards ensures quality and reliability of the transient suppression device.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The type of diode used ensures effective suppression of transient voltages and surges, protecting connected devices.

Maximum Forward Voltage (VF): 3.5 V

Low forward voltage ensures minimal voltage drop during normal operation, improving overall efficiency.

Technology: ZENER

Zener technology offers precise voltage regulation and protection against overvoltage conditions.

Terminal Form: FLAT

Flat terminal form provides secure and reliable connections in the circuit.

Maximum Repetitive Peak Reverse Voltage: 11 V

The maximum repetitive peak reverse voltage indicates the maximum voltage that can be applied in the reverse direction repeatedly without damage.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures protection in a specific direction, safeguarding against transient voltages effectively.

Maximum Clamping Voltage: 18.2 V

High clamping voltage capability ensures effective suppression of transient voltage spikes to protect sensitive electronics.

Diode Element Material: SILICON

Silicon diode element material offers superior performance and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices SZNS6A11AFT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE

Maximum Breakdown Voltage:

13.5 V

Minimum Breakdown Voltage:

12.2 V

Nominal Breakdown Voltage:

12.85 V

Maximum Clamping Voltage:

18.2 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JESD-30 Code:

R-PDSO-F2

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

11 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

11 V

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SZNS6A11AFT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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