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SZESD7102BT1G

Onsemi

SZESD7102BT1G by Onsemi

SZESD7102BT1G by Onsemi is a Transient Suppression Device with 2 common anode elements. It has a reverse test voltage of 5V, max clamping voltage of 55V, and operates b/w -55 to 150 °C. Ideal for applications requiring protection against transient voltage spikes in electronic circuits.

Median Price

$0.144

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 255,000 parts In-Stock

1+ parts

-

100+ parts

$0.156

1k+ parts

$0.130

10k+ parts

$0.116

255,000

-

$0.156

$0.130

$0.116

Farnell

UK . 255,000 parts In-Stock

1+ parts

-

100+ parts

$0.109

1k+ parts

-

10k+ parts

-

255,000

-

$0.109

-

-

Verical

USA . 225,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.144

225,000

-

-

-

$0.144

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 543 parts In-Stock

1+ parts

$0.127

100+ parts

-

1k+ parts

-

10k+ parts

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543

$0.127

-

-

-

Forefront Electronics and Design

USA . 4 parts In-Stock

1+ parts

$0.490

100+ parts

-

1k+ parts

-

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-

4

$0.490

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-

Chip Stock

USA . 76,000 parts In-Stock

1+ parts

-

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76,000

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-

-

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Vyrian

USA . 4,639 parts In-Stock

1+ parts

-

100+ parts

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4,639

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-

-

-

Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

1+ parts

-

100+ parts

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3,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 130 parts In-Stock

1+ parts

$0.109

100+ parts

-

1k+ parts

-

10k+ parts

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130

$0.109

-

-

-

Corphita

USA . 1,427 parts In-Stock

1+ parts

$0.121

100+ parts

-

1k+ parts

-

10k+ parts

-

1,427

$0.121

-

-

-

Component Stockers USA

USA . 41,026 parts In-Stock

1+ parts

$0.140

100+ parts

$0.130

1k+ parts

$0.120

10k+ parts

$0.120

41,026

$0.140

$0.130

$0.120

$0.120

Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$0.230

100+ parts

$0.209

1k+ parts

$0.189

10k+ parts

-

270

$0.230

$0.209

$0.189

-

AZTECH Wire

Italy . 468 parts In-Stock

1+ parts

$8.010

100+ parts

-

1k+ parts

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468

$8.010

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Perfect Parts

USA . 103,311 parts In-Stock

1+ parts

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103,311

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Authorized Procurement Solutions

USA . 36,000 parts In-Stock

1+ parts

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100+ parts

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36,000

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Continental Prestige Electronics

USA . 30,000 parts In-Stock

1+ parts

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100+ parts

$0.109

1k+ parts

-

10k+ parts

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30,000

-

$0.109

-

-

TANS Electronics

Latvia . 5,867 parts In-Stock

1+ parts

-

100+ parts

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5,867

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-

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SupplyDigital Components

Austria . 4,925 parts In-Stock

1+ parts

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4,925

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-

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Kulean Microsystems

USA . 4,472 parts In-Stock

1+ parts

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100+ parts

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4,472

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-

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Problanco Electronics

Mexico . 2,004 parts In-Stock

1+ parts

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100+ parts

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2,004

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UHIMA Technologies

Türkiye . 362 parts In-Stock

1+ parts

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100+ parts

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362

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Overview

Discover the Onsemi SZESD7102BT1G, a high-quality transient suppression device designed to protect your electronics from voltage spikes. Manufactured by Onsemi, a trusted name in the industry, this common anode device offers dual elements for added protection. Ideal for a wide range of applications, from industrial machinery to consumer electronics, this small outline package provides peace of mind with its maximum clamping voltage of 55V. Ensure the longevity of your electronic devices with the reliable performance and value that the Onsemi SZESD7102BT1G brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the components inside, making this product long-lasting and reliable.

Maximum Reverse Current: 1 uA

Low maximum reverse current ensures efficient operation and minimal power loss in the circuit, making this product energy-efficient.

Minimum Breakdown Voltage: 16.5 V

High minimum breakdown voltage ensures effective transient suppression and protection against voltage spikes, making this product reliable in safeguarding sensitive electronics.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for proper soldering and assembly processes, ensuring a strong and reliable connection in the circuit.

Reference Standard: AEC-Q101; IEC-61000-4-2

Compliance with industry standards ensures quality and reliability of the product, making it suitable for a wide range of applications.

Technical Specifications

Transient Suppression Devices SZESD7102BT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

16.5 V

Maximum Clamping Voltage:

55 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

16 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZESD7102BT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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