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SZESD5Z6.0T1G

Onsemi

SZESD5Z6.0T1G by Onsemi

SZESD5Z6.0T1G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a 6.8V breakdown voltage and 12.4V clamping voltage, ideal for transient suppression applications. It has a max power dissipation of 181W, operates b/w -55 to 150 °C, and meets AEC-Q101; IEC-61000-4-2, 4-4 standards.

Median Price

$0.176

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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NAC Semi

USA . 36,000 parts In-Stock

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Digiode

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Semicontronic

India . 50,860 parts In-Stock

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$0.010

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$0.010

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Aztec Data Supply Inc.

USA . 3,897 parts In-Stock

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$0.030

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Advanced Electronics

New Zealand . 70 parts In-Stock

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Ampacity Inc.

Singapore . 44,862 parts In-Stock

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$1.010

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Eastek

USA . 21,000 parts In-Stock

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Perfect Parts

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Lixinc

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Problanco Electronics

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Lucentia Tech

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South Africa . 423 parts In-Stock

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Overview

Discover the ultimate protection for your electronics with the SZESD5Z6.0T1G by Onsemi. As a leading manufacturer in transient suppression devices, Onsemi delivers top-quality products that ensure your devices are safeguarded against power surges and voltage spikes. Ideal for a wide range of applications, this single-configured device offers maximum non-repetitive peak reverse power dissipation of 181 W and a nominal breakdown voltage of 6.8 V. With its small outline package style and dual terminal position, the SZESD5Z6.0T1G provides reliable and efficient protection while maintaining high performance levels. Trust Onsemi to keep your devices safe and secure.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent durability and protection for the electronic components within the package.

Config: SINGLE

Simplified design and installation process with only one configuration needed.

Surface Mount: YES

Easily mounted on circuit boards for efficient integration into electronic systems.

Maximum Non Repetitive Peak Reverse Power Dissipation: 181 W

High power dissipation capability ensures protection against sudden spikes in voltage.

Nominal Breakdown Voltage: 6.8 V

Precise breakdown voltage specification ensures targeted protection for sensitive electronic components.

Maximum Clamping Voltage: 12.4 V

Efficiently clamps voltage spikes to a safe level, protecting downstream components.

Technical Specifications

Transient Suppression Devices SZESD5Z6.0T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Minimum Breakdown Voltage:

6.8 V

Nominal Breakdown Voltage:

6.8 V

Maximum Clamping Voltage:

12.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

181 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Reference Standard:

AEC-Q101; IEC-61000-4-2, 4-4

Maximum Repetitive Peak Reverse Voltage:

6 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZESD5Z6.0T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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