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SZESD9L3.3ST5G

Onsemi

SZESD9L3.3ST5G by Onsemi

SZESD9L3.3ST5G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 3.3V reverse test voltage, 1uA max reverse current, and 9V max clamping voltage. It is used for transient suppression in electronics applications requiring protection against voltage spikes and surges.

Median Price

$0.173

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 136,000 parts In-Stock

1+ parts

-

100+ parts

$0.187

1k+ parts

$0.155

10k+ parts

$0.138

136,000

-

$0.187

$0.155

$0.138

Verical

USA . 136,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.173

136,000

-

-

-

$0.173

DigiKey

USA . 128,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.110

128,000

-

-

-

$0.110

Flip Electronics (Authorized)

USA . 128,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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128,000

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,596 parts In-Stock

1+ parts

$0.145

100+ parts

-

1k+ parts

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1,596

$0.145

-

-

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.199

100+ parts

-

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50

$0.199

-

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Vyrian

USA . 130,354 parts In-Stock

1+ parts

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130,354

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Flip Electronics

USA . 128,000 parts In-Stock

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-

100+ parts

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128,000

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Chip Stock

USA . 77,000 parts In-Stock

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77,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 83 parts In-Stock

1+ parts

$0.075

100+ parts

$0.071

1k+ parts

$0.071

10k+ parts

-

83

$0.075

$0.071

$0.071

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Aztec Data Supply Inc.

USA . 4,149 parts In-Stock

1+ parts

$0.110

100+ parts

-

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4,149

$0.110

-

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Semicontronic

India . 130,379 parts In-Stock

1+ parts

$0.130

100+ parts

$0.127

1k+ parts

$0.126

10k+ parts

-

130,379

$0.130

$0.127

$0.126

-

Corphita

USA . 1,692 parts In-Stock

1+ parts

$0.138

100+ parts

-

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1,692

$0.138

-

-

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Corohmni

South Africa . 375 parts In-Stock

1+ parts

$0.191

100+ parts

-

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375

$0.191

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Argo Parts USA

USA . 2,129 parts In-Stock

1+ parts

$0.199

100+ parts

-

1k+ parts

-

10k+ parts

$0.193

2,129

$0.199

-

-

$0.193

Continental Prestige Electronics

USA . 2,055 parts In-Stock

1+ parts

$0.199

100+ parts

-

1k+ parts

-

10k+ parts

$0.195

2,055

$0.199

-

-

$0.195

Component Stockers USA

USA . 503 parts In-Stock

1+ parts

$99.990

100+ parts

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503

$99.990

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Kepictronics

USA . 66,540 parts In-Stock

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66,540

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SupplyDigital Components

Austria . 7,560 parts In-Stock

1+ parts

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7,560

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TANS Electronics

Latvia . 6,792 parts In-Stock

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6,792

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Problanco Electronics

Mexico . 6,463 parts In-Stock

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6,463

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.195

1k+ parts

$0.189

10k+ parts

$0.185

2,000

-

$0.195

$0.189

$0.185

Kulean Microsystems

USA . 1,961 parts In-Stock

1+ parts

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1,961

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UHIMA Technologies

Türkiye . 630 parts In-Stock

1+ parts

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630

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Overview

Discover the cutting-edge technology of the SZESD9L3.3ST5G by Onsemi, a top-tier manufacturer known for providing high-quality Transient Suppression Devices. This innovative product offers unparalleled protection against voltage spikes, ensuring the longevity and reliability of your electronic devices. With its small outline package and dual terminal position, the SZESD9L3.3ST5G is perfect for a wide range of applications. Trust Onsemi to deliver superior performance and peace of mind, all in one compact and efficient solution. Elevate your electronics with the SZESD9L3.3ST5G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package durable and resistant to external elements, ensuring long-lasting protection for the device.

Config: SINGLE

Single configuration simplifies installation and maintenance, reducing complexity in the setup process.

Surface Mount: YES

Surface mount capability allows for easy and convenient placement on circuit boards, saving space and improving overall circuit layout.

Maximum Reverse Current: 1 uA

Low maximum reverse current ensures efficient operation and minimal power loss in the circuit.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard mounting procedures and facilitates easy integration into existing setups.

No. of Terminals: 2

Having only two terminals simplifies connection and reduces the risk of error during installation.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability and performance even in harsh environmental conditions.

Minimum Operating Temperature: -55 °C

Wide range of operating temperatures allows for use in diverse environments without compromising performance.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability, enhancing the overall performance of the device.

Maximum Power Dissipation: 0.15 W

Low maximum power dissipation reduces heat generation and improves energy efficiency of the device.

Minimum Breakdown Voltage: 4.8 V

High minimum breakdown voltage ensures reliable protection against voltage surges and spikes in the circuit.

Reference Standard: AEC-Q101; IEC-61000-4-2

Compliance with industry standards ensures quality and reliability of the product, making it a trustworthy choice for applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type provides efficient protection against voltage transients, ensuring the safety of the circuit components.

Maximum Forward Voltage (VF): 1 V

Low maximum forward voltage minimizes power loss and ensures efficient operation of the diode.

Technology: AVALANCHE

Avalanche technology enhances the diode's performance and reliability under high-energy transient conditions.

Maximum Clamping Voltage: 9 V

Maximum clamping voltage provides reliable protection against voltage spikes, preventing damage to sensitive components.

Technical Specifications

Transient Suppression Devices SZESD9L3.3ST5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Minimum Breakdown Voltage:

4.8 V

Maximum Clamping Voltage:

9 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.15 W

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZESD9L3.3ST5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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