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SZESD5Z12T1G

Onsemi

SZESD5Z12T1G by Onsemi

SZESD5Z12T1G by Onsemi is a unidirectional avalanche diode with a breakdown voltage of 14.1V and max power dissipation of 0.5W. It is designed for transient suppression applications in automotive electronics, meeting AEC-Q101 and IEC-61000-4-2, 4-4 standards.

Median Price

$0.096

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 11 parts In-Stock

1+ parts

$0.018

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$0.018

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$0.018

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11

$0.018

$0.018

$0.018

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DigiKey

USA . 141 parts In-Stock

1+ parts

$0.240

100+ parts

$0.090

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$0.058

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141

$0.240

$0.090

$0.058

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Farnell

UK . 60 parts In-Stock

1+ parts

-

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$0.071

1k+ parts

$0.070

10k+ parts

$0.051

60

-

$0.071

$0.070

$0.051

Element14

Singapore . 20 parts In-Stock

1+ parts

-

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$0.121

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$0.087

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$0.086

20

-

$0.121

$0.087

$0.086

Distributors (In-Stock)

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Digiode

USA . 1,123 parts In-Stock

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$0.037

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1,123

$0.037

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Nova Conductors

Japan . 74 parts In-Stock

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$1.000

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74

$1.000

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Chip Stock

USA . 18,600 parts In-Stock

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18,600

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Vyrian

USA . 13,439 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 12,335 parts In-Stock

1+ parts

$0.015

100+ parts

$0.015

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$0.015

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12,335

$0.015

$0.015

$0.015

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Corphita

USA . 2,331 parts In-Stock

1+ parts

$0.035

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2,331

$0.035

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Corohmni

South Africa . 267 parts In-Stock

1+ parts

$0.039

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-

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267

$0.039

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Ampacity Inc.

Singapore . 12,364 parts In-Stock

1+ parts

$0.080

100+ parts

-

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12,364

$0.080

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Argo Parts USA

USA . 393 parts In-Stock

1+ parts

$0.094

100+ parts

-

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10k+ parts

$0.091

393

$0.094

-

-

$0.091

Aztec Data Supply Inc.

USA . 1,384 parts In-Stock

1+ parts

$0.170

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-

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1,384

$0.170

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Advanced Electronics

New Zealand . 145 parts In-Stock

1+ parts

$0.213

100+ parts

$0.211

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$0.203

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145

$0.213

$0.211

$0.203

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Kepictronics

USA . 66,540 parts In-Stock

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66,540

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Perfect Parts

USA . 43,618 parts In-Stock

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43,618

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Continental Prestige Electronics

USA . 10,916 parts In-Stock

1+ parts

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100+ parts

$0.103

1k+ parts

$0.079

10k+ parts

$0.052

10,916

-

$0.103

$0.079

$0.052

Lixinc

USA . 9,972 parts In-Stock

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9,972

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TANS Electronics

Latvia . 7,023 parts In-Stock

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Problanco Electronics

Mexico . 5,402 parts In-Stock

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5,402

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Kulean Microsystems

USA . 4,216 parts In-Stock

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SupplyDigital Components

Austria . 3,373 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,980 parts In-Stock

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1,980

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UHIMA Technologies

Türkiye . 805 parts In-Stock

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805

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Robosynatics

Brazil . 250 parts In-Stock

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250

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Lucentia Tech

USA . 250 parts In-Stock

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$4.248

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$4.248

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$4.248

250

-

$4.248

$4.248

$4.248

GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Enhance your electronic devices with the SZESD5Z12T1G by Onsemi, a top-quality transient suppression device that guarantees reliable protection against voltage spikes. Manufactured by Onsemi, a trusted name in the industry, this product is designed for various applications where surge protection is essential. With its innovative technology and high-performance capabilities, the SZESD5Z12T1G ensures peace of mind for customers, offering unmatched value and benefits. Upgrade your devices today with this cutting-edge solution from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is durable and reliable, ensuring the longevity of the product.

Config: SINGLE

Single configuration makes installation and usage simple and straightforward.

Surface Mount: YES

Surface mount capability allows for easy integration into existing circuit boards.

Maximum Non Repetitive Peak Reverse Power Dissipation: 240 W

High peak reverse power dissipation rating ensures the device can handle sudden power surges effectively.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to fit the device into various electronic devices and systems.

No. of Terminals: 2

Having 2 terminals makes it simple to connect the device in a circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact designs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures the device can withstand harsh environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature range allows for usage in a wide variety of environments.

Terminal Finish: MATTE TIN

Matte Tin finish provides good conductivity and corrosion resistance for reliable performance.

Terminal Position: DUAL

Dual terminal position allows for flexibility in installation and connection.

Maximum Power Dissipation: 0.5 W

Low power dissipation ensures energy efficiency and helps prevent overheating.

Minimum Breakdown Voltage: 14.1 V

High minimum breakdown voltage helps protect connected devices from electrical surges.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature prevents damage to the device during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and bonding during assembly.

Reference Standard: AEC-Q101; IEC-61000-4-2, 4-4

Compliance with industry standards ensures quality and reliability of the product.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type helps protect sensitive electronics from voltage spikes.

Technology: AVALANCHE

Avalanche technology allows for quick response to overvoltage conditions, providing effective protection.

Terminal Form: FLAT

Flat terminal form ensures easy and secure connections in a circuit.

Maximum Repetitive Peak Reverse Voltage: 12 V

High maximum repetitive peak reverse voltage rating offers reliable protection against reverse voltage.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures consistent voltage protection in one direction.

Diode Element Material: SILICON

Silicon diode element material provides high performance and reliability for voltage suppression.

Technical Specifications

Transient Suppression Devices SZESD5Z12T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Minimum Breakdown Voltage:

14.1 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

240 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Reference Standard:

AEC-Q101; IEC-61000-4-2, 4-4

Maximum Repetitive Peak Reverse Voltage:

12 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZESD5Z12T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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