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SZESD7951ST5G

Onsemi

SZESD7951ST5G by Onsemi

SZESD7951ST5G by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with AVALANCHE technology. It has a peak reflow temperature of 260°C and can withstand up to 30s at peak reflow temperature. Ideal for transient suppression applications in various electronic circuits.

Median Price

$0.180

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4 parts In-Stock

1+ parts

-

100+ parts

$0.180

1k+ parts

$0.149

10k+ parts

$0.133

4

-

$0.180

$0.149

$0.133

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,097 parts In-Stock

1+ parts

$0.141

100+ parts

-

1k+ parts

-

10k+ parts

-

1,097

$0.141

-

-

-

Nova Conductors

Japan . 80 parts In-Stock

1+ parts

$0.157

100+ parts

-

1k+ parts

-

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-

80

$0.157

-

-

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Flip Electronics

USA . 312,000 parts In-Stock

1+ parts

-

100+ parts

-

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312,000

-

-

-

-

Chip Stock

USA . 25,000 parts In-Stock

1+ parts

-

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-

1k+ parts

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25,000

-

-

-

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Vyrian

USA . 5,820 parts In-Stock

1+ parts

-

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5,820

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,766 parts In-Stock

1+ parts

$0.070

100+ parts

-

1k+ parts

-

10k+ parts

-

1,766

$0.070

-

-

-

Ampacity Inc.

Singapore . 17,895 parts In-Stock

1+ parts

$0.126

100+ parts

-

1k+ parts

-

10k+ parts

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17,895

$0.126

-

-

-

Semicontronic

India . 3,854 parts In-Stock

1+ parts

$0.126

100+ parts

$0.123

1k+ parts

$0.122

10k+ parts

-

3,854

$0.126

$0.123

$0.122

-

Corphita

USA . 1,568 parts In-Stock

1+ parts

$0.133

100+ parts

-

1k+ parts

-

10k+ parts

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1,568

$0.133

-

-

-

Corohmni

South Africa . 169 parts In-Stock

1+ parts

$0.140

100+ parts

-

1k+ parts

-

10k+ parts

-

169

$0.140

-

-

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Argo Parts USA

USA . 4,832 parts In-Stock

1+ parts

$0.149

100+ parts

-

1k+ parts

-

10k+ parts

$0.145

4,832

$0.149

-

-

$0.145

Continental Prestige Electronics

USA . 4,668 parts In-Stock

1+ parts

$0.149

100+ parts

-

1k+ parts

-

10k+ parts

$0.146

4,668

$0.149

-

-

$0.146

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.157

100+ parts

$0.154

1k+ parts

-

10k+ parts

-

2,000

$0.157

$0.154

-

-

SupplyDigital Components

Austria . 7,269 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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7,269

-

-

-

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TANS Electronics

Latvia . 7,156 parts In-Stock

1+ parts

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100+ parts

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7,156

-

-

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Problanco Electronics

Mexico . 4,429 parts In-Stock

1+ parts

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100+ parts

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4,429

-

-

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UHIMA Technologies

Türkiye . 252 parts In-Stock

1+ parts

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100+ parts

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252

-

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Kulean Microsystems

USA . 31 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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31

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-

-

Overview

Experience superior protection with the Onsemi SZESD7951ST5G Transient Suppression Device. Manufactured by a trusted industry leader, this device offers reliable safeguarding against voltage spikes and transients in a wide range of applications. From industrial equipment to consumer electronics, this diode ensures uninterrupted performance and peace of mind. Trust Onsemi for quality, trust SZESD7951ST5G for unparalleled protection.

Feature Benefit Bullets

Terminal Finish: MATTE TIN

MATTE TIN finish provides excellent solderability and corrosion resistance, ensuring reliable and long-lasting connections.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this product can withstand reflow soldering processes without damage, making it easy to integrate into manufacturing procedures.

Peak Reflow Temperature °C: 260

Capable of withstanding peak reflow temperatures of up to 260°C, ensuring durability during soldering processes and high-temperature environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans Voltage Suppressor diodes provide effective transient voltage suppression, protecting sensitive electronic components from voltage spikes and surges.

Technology: AVALANCHE

Avalanche technology allows for rapid response to overvoltage events, ensuring quick and reliable protection for connected devices.

Diode Element Material: SILICON

Silicon diode elements offer high efficiency and robust performance, making this product suitable for a wide range of applications requiring transient suppression.

Technical Specifications

Transient Suppression Devices SZESD7951ST5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Diode Element Material:

SILICON

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZESD7951ST5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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