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SZESD7002WTT1G

Onsemi

SZESD7002WTT1G by Onsemi

SZESD7002WTT1G by Onsemi is a Transient Suppression Device with a common anode configuration and 2 elements. It has a breakdown voltage of 16.5V and can operate in temperatures ranging from -55°C to 125°C. This diode is suitable for applications requiring protection against voltage spikes and transients.

Median Price

$0.667

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Arrow

USA . 15,000 parts In-Stock

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$0.667

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15,000

$0.667

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Mouser Electronics

USA . 120 parts In-Stock

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$0.760

100+ parts

$0.300

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$0.213

10k+ parts

$0.146

120

$0.760

$0.300

$0.213

$0.146

Flip Electronics (Authorized)

USA . 24,454 parts In-Stock

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24,454

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Verical

USA . 3,000 parts In-Stock

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$0.193

3,000

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$0.193

Distributors (In-Stock)

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Digiode

USA . 188 parts In-Stock

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$0.636

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Flip Electronics

USA . 79,000 parts In-Stock

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Chip Stock

USA . 23,080 parts In-Stock

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Vyrian

USA . 7,808 parts In-Stock

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Bristol Electronics

USA . 3,361 parts In-Stock

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3,361

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NAC Semi

USA . 3,000 parts In-Stock

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$0.318

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IBS Electronics

USA . 3,000 parts In-Stock

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$0.148

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Aztec Data Supply Inc.

USA . 112 parts In-Stock

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$0.090

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$0.090

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Ampacity Inc.

Singapore . 11,420 parts In-Stock

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$0.111

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$0.111

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Semicontronic

India . 6,095 parts In-Stock

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$0.164

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$0.160

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$0.159

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6,095

$0.164

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$0.159

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Corohmni

South Africa . 158 parts In-Stock

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$0.193

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Corphita

USA . 2,396 parts In-Stock

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$0.603

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Perfect Parts

USA . 10,380,757 parts In-Stock

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Kepictronics

USA . 33,000 parts In-Stock

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Lixinc

USA . 16,080 parts In-Stock

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SupplyDigital Components

Austria . 8,280 parts In-Stock

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TANS Electronics

Latvia . 7,759 parts In-Stock

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7,759

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Futuretech Components

Singapore . 3,000 parts In-Stock

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Kulean Microsystems

USA . 2,607 parts In-Stock

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Infinite Electronics LLP (Excess)

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Argo Parts USA

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Continental Prestige Electronics

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Problanco Electronics

Mexico . 717 parts In-Stock

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UHIMA Technologies

Türkiye . 414 parts In-Stock

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Overview

Discover the SZESD7002WTT1G by Onsemi, a high-quality Transient Suppression Device that offers unmatched protection for your electronics. With its common anode configuration and small outline package style, this device provides reliable suppression of voltage spikes and surges. Whether you're in automotive, industrial, or consumer electronics, this diode is perfect for applications where protection against transient voltage events is crucial. Trust in the expertise of Onsemi, a renowned manufacturer known for their commitment to excellence. Experience the value and benefits of the SZESD7002WTT1G, keeping your devices safe and ensuring uninterrupted performance. Upgrade your protection today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures a durable and cost-effective design, making it ideal for a wide range of applications.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration with two elements provides effective protection against transient voltage events, making it suitable for high-performance surge protection requirements.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on circuit boards, saving valuable space and enabling high-density designs.

Nominal Breakdown Voltage: 16.5 V

With a high nominal breakdown voltage, this product offers reliable protection by clamping the voltage to a safe level during voltage spikes or transient events.

Package Shape: RECTANGULAR

The rectangular package shape ensures compatibility with various mounting techniques, simplifying assembly and enhancing versatility.

No. of Terminals: 3

Having three terminals allows for secure and reliable connections, ensuring efficient power transfer and reducing the risk of disconnection or damage.

Package Style (Meter): SMALL OUTLINE

The small outline package style provides a compact and space-saving solution, making it suitable for applications with limited board space.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh operating conditions and maintain its performance and reliability.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures reliable operation even in extreme cold environments, making it suitable for various industrial and automotive applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish increases soldering reliability and provides better resistance against corrosion, ensuring long-term, stable performance.

Terminal Position: DUAL

Having a dual terminal position allows for flexible mounting options, enhancing compatibility with different circuit designs and layouts.

Minimum Breakdown Voltage: 16.5 V

With a minimum breakdown voltage equal to the nominal value, this product offers consistent and reliable protection against voltage spikes.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature ensures efficient solder reflow processes, minimizing the risk of component damage and achieving high assembly yields.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability allows for use in lead-free soldering processes, meeting modern environmental requirements.

Reference Standard: AEC-Q101; IEC-61000-4-2

Compliant with recognized industry standards like AEC-Q101 and IEC-61000-4-2, this product ensures high reliability and compatibility with various applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

With its trans voltage suppressor diode configuration, this product efficiently clamps excessive voltage spikes and transient events, protecting sensitive components.

Technology: AVALANCHE

Utilizing avalanche technology, this device ensures rapid response to transient events and minimizes the potential for damage to connected circuitry.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections, making it suitable for automated assembly processes and reducing the risk of solder joint failures.

No. of Elements: 2

Having two diode elements increases the capability for effective suppression and improves overall performance in handling voltage transients.

Maximum Repetitive Peak Reverse Voltage: 16 V

With a high maximum repetitive peak reverse voltage, this product provides reliable protection against reverse voltage events, ensuring long-term reliability.

Moisture Sensitivity Level (MSL): 1

With an MSL rating of 1, this product exhibits excellent resistance to moisture absorption, enhancing its reliability in humid environments.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that transient events are effectively clamped in one direction, providing targeted protection in specific applications.

Maximum Clamping Voltage: 33.9 V

The high maximum clamping voltage ensures that transient voltages are limited to a safe level, preventing damage to sensitive components.

Diode Element Material: SILICON

The silicon diode element material offers excellent electrical characteristics, such as low forward voltage drop and high temperature stability, ensuring reliable surge protection.

Technical Specifications

Transient Suppression Devices SZESD7002WTT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Minimum Breakdown Voltage:

16.5 V

Nominal Breakdown Voltage:

16.5 V

Maximum Clamping Voltage:

33.9 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZESD7002WTT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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