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SZESD5Z5.0T1G

Onsemi

SZESD5Z5.0T1G by Onsemi

SZESD5Z5.0T1G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a 6.2V breakdown voltage and 174W max non-repetitive peak reverse power dissipation. It is designed for transient suppression applications in automotive electronics, meeting AEC-Q101 and IEC-61000-4-2, 4-4 standards.

Median Price

$0.250

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,454 parts In-Stock

1+ parts

$0.250

100+ parts

$0.094

1k+ parts

$0.058

10k+ parts

$0.045

2,454

$0.250

$0.094

$0.058

$0.045

Flip Electronics (Authorized)

USA . 54,000 parts In-Stock

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Flip Electronics

USA . 54,000 parts In-Stock

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54,000

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Chip Stock

USA . 45,000 parts In-Stock

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45,000

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NAC Semi

USA . 42,000 parts In-Stock

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$0.347

42,000

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$0.347

Vyrian

USA . 36,569 parts In-Stock

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36,569

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Pegasus Components GmbH

Germany . 24,000 parts In-Stock

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Digiode

USA . 2,294 parts In-Stock

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Nova Conductors

Japan . 700 parts In-Stock

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700

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Distributors (Availability)

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Ampacity Inc.

Singapore . 36,838 parts In-Stock

1+ parts

$0.072

100+ parts

-

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36,838

$0.072

-

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Semicontronic

India . 36,624 parts In-Stock

1+ parts

$0.072

100+ parts

$0.070

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$0.070

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-

36,624

$0.072

$0.070

$0.070

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Corohmni

South Africa . 226 parts In-Stock

1+ parts

$0.085

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226

$0.085

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.092

100+ parts

$0.087

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$0.087

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10

$0.092

$0.087

$0.087

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Aztec Data Supply Inc.

USA . 4,142 parts In-Stock

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$0.200

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$0.200

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Eastek

USA . 594,000 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Lixinc

USA . 17,775 parts In-Stock

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Problanco Electronics

Mexico . 8,258 parts In-Stock

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SupplyDigital Components

Austria . 8,141 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,121 parts In-Stock

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Kulean Microsystems

USA . 5,317 parts In-Stock

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Argo Parts USA

USA . 4,043 parts In-Stock

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TANS Electronics

Latvia . 2,370 parts In-Stock

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Continental Prestige Electronics

USA . 1,897 parts In-Stock

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Corphita

USA . 916 parts In-Stock

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Robosynatics

Brazil . 500 parts In-Stock

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$0.308

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$0.308

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$0.308

$0.308

Lucentia Tech

USA . 500 parts In-Stock

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$0.308

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$0.308

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$0.308

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$0.308

$0.308

UHIMA Technologies

Türkiye . 92 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Modulus Dynamics

Lithuania . 35 parts In-Stock

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Overview

Experience the superior quality and reliability of the SZESD5Z5.0T1G by Onsemi, a leading manufacturer in the industry. This Transient Suppression Device offers unmatched protection against voltage spikes, ensuring your electronics are safeguarded from damage. Ideal for a wide range of applications, this product provides peace of mind and long-lasting performance. Trust in the value, benefits, and advantages that the SZESD5Z5.0T1G brings to your electronic systems. Upgrade to excellence today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides good insulation and durability, ensuring reliable performance in varying environmental conditions.

Maximum Non Repetitive Peak Reverse Power Dissipation: 174 W

High maximum non repetitive peak reverse power dissipation allows the device to handle sudden spikes in voltage without damage, providing robust protection for sensitive electronics.

Nominal Breakdown Voltage: 6.2 V

The nominal breakdown voltage of 6.2 V ensures effective suppression of overvoltage conditions to safeguard connected devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this device can withstand elevated temperatures without compromising performance, ideal for industrial and automotive applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability, ensuring secure and reliable connections for efficient installation and operation.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode technology allows for fast response times and low clamping voltages, effectively protecting sensitive components from voltage transients.

Technical Specifications

Transient Suppression Devices SZESD5Z5.0T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Minimum Breakdown Voltage:

6.2 V

Nominal Breakdown Voltage:

6.2 V

Maximum Clamping Voltage:

11.6 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

174 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Reference Standard:

AEC-Q101; IEC-61000-4-2, 4-4

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZESD5Z5.0T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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