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SZESD8472MUT5G

Onsemi

SZESD8472MUT5G by Onsemi

SZESD8472MUT5G by Onsemi is a single transient suppression device with a breakdown voltage of 7V. It features a bidirectional diode type with max clamping voltage of 20V, suitable for applications requiring protection against voltage transients in automotive and industrial environments.

Median Price

$0.070

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 13,168 parts In-Stock

1+ parts

$0.420

100+ parts

$0.161

1k+ parts

$0.095

10k+ parts

$0.083

13,168

$0.420

$0.161

$0.095

$0.083

Rochester

USA . 154,055 parts In-Stock

1+ parts

-

100+ parts

$0.071

1k+ parts

$0.059

10k+ parts

$0.053

154,055

-

$0.071

$0.059

$0.053

Verical

USA . 147,807 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.066

147,807

-

-

-

$0.066

DigiKey

USA . 101,052 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.070

101,052

-

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-

$0.070

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 241 parts In-Stock

1+ parts

$0.056

100+ parts

-

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241

$0.056

-

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Nova Conductors

Japan . 35 parts In-Stock

1+ parts

$0.103

100+ parts

-

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35

$0.103

-

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Flip Electronics

USA . 120,633 parts In-Stock

1+ parts

-

100+ parts

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120,633

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Chip Stock

USA . 76,000 parts In-Stock

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76,000

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Vyrian

USA . 55,401 parts In-Stock

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55,401

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,658 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

-

10k+ parts

-

2,658

$0.040

-

-

-

Semicontronic

India . 56,321 parts In-Stock

1+ parts

$0.050

100+ parts

$0.049

1k+ parts

$0.048

10k+ parts

-

56,321

$0.050

$0.049

$0.048

-

Ampacity Inc.

Singapore . 56,186 parts In-Stock

1+ parts

$0.050

100+ parts

-

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-

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56,186

$0.050

-

-

-

Corphita

USA . 222 parts In-Stock

1+ parts

$0.053

100+ parts

-

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222

$0.053

-

-

-

Corohmni

South Africa . 240 parts In-Stock

1+ parts

$0.059

100+ parts

-

1k+ parts

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240

$0.059

-

-

-

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$0.093

100+ parts

$0.088

1k+ parts

$0.088

10k+ parts

-

1,000

$0.093

$0.088

$0.088

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.101

100+ parts

-

1k+ parts

$0.097

10k+ parts

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50

$0.101

-

$0.097

-

Continental Prestige Electronics

USA . 1,964 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

-

10k+ parts

$0.101

1,964

$0.103

-

-

$0.101

Argo Parts USA

USA . 729 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

-

10k+ parts

$0.100

729

$0.103

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-

$0.100

Eastek

USA . 60,000 parts In-Stock

1+ parts

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60,000

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RC Electronics

USA . 9,000 parts In-Stock

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9,000

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Problanco Electronics

Mexico . 8,300 parts In-Stock

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8,300

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Kulean Microsystems

USA . 5,965 parts In-Stock

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5,965

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Kepictronics

USA . 4,500 parts In-Stock

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4,500

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TANS Electronics

Latvia . 3,425 parts In-Stock

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3,425

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SupplyDigital Components

Austria . 1,645 parts In-Stock

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1,645

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UHIMA Technologies

Türkiye . 52 parts In-Stock

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52

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Overview

Enhance your electronic devices with the SZESD8472MUT5G by Onsemi, a top-of-the-line Transient Suppression Device designed to protect against voltage spikes and surges. Manufactured by industry leader Onsemi, this product offers unparalleled quality and reliability. Ideal for a wide range of applications, this chip carrier device is perfect for safeguarding sensitive components in automotive, industrial, and consumer electronics. With a bidirectional polarity and maximum clamping voltage of 20V, customers can trust that their devices are protected from damaging power fluctuations. Invest in the SZESD8472MUT5G today for peace of mind and optimal performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability in various operating environments.

Config: SINGLE

The single configuration simplifies installation and maintenance, making it ideal for applications with limited space.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Nominal Breakdown Voltage: 7 V

With a nominal breakdown voltage of 7V, this device effectively protects sensitive components from overvoltage events.

Package Shape: RECTANGULAR

The rectangular package shape offers versatility and ease of handling during installation.

No. of Terminals: 2

The two terminals simplify the connection process, making it user-friendly for technicians and engineers.

Package Style (Meter): CHIP CARRIER

The chip carrier style enhances thermal performance and allows for high power dissipation.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this device can withstand harsh environmental conditions.

Minimum Operating Temperature: -55 °C

The wide temperature range ensures reliable operation even in extreme cold temperatures.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The nickel/palladium/gold terminal finish offers excellent corrosion resistance and ensures long-term reliability.

Terminal Position: BOTTOM

The bottom terminal position allows for easy and secure soldering onto PCBs, ensuring a stable connection.

Maximum Power Dissipation: 0.3 W

The high power dissipation capability makes this device suitable for high-energy applications.

Minimum Breakdown Voltage: 7 V

The minimum breakdown voltage of 7V provides reliable protection against voltage spikes and surges.

Maximum Breakdown Voltage: 12 V

With a maximum breakdown voltage of 12V, this device offers an extra margin of protection for sensitive electronics.

Reference Standard: AEC-Q101; IEC-61000-4-2

Compliant with AEC-Q101 and IEC-61000-4-2 standards, this device meets industry requirements for quality and performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a transient voltage suppressor diode ensures efficient clamping of voltage spikes to protect downstream components.

Technology: AVALANCHE

The avalanche technology provides rapid response to overvoltage events, offering reliable protection for sensitive electronics.

Terminal Form: NO LEAD

The no-lead terminal form eliminates the risk of lead contamination and provides a more environmentally friendly solution.

Maximum Repetitive Peak Reverse Voltage: 5.3 V

With a maximum repetitive peak reverse voltage of 5.3V, this device offers consistent protection against reverse polarity events.

Polarity: BIDIRECTIONAL

The bidirectional polarity ensures protection from voltage spikes in both directions, offering comprehensive safeguarding for electronic circuits.

Maximum Clamping Voltage: 20 V

The maximum clamping voltage of 20V limits the voltage across the protected circuit, preventing damage to sensitive components.

Diode Element Material: SILICON

The use of silicon diode element material provides high-performance characteristics, ensuring reliable and efficient transient suppression.

Technical Specifications

Transient Suppression Devices SZESD8472MUT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

Maximum Breakdown Voltage:

12 V

Minimum Breakdown Voltage:

7 V

Nominal Breakdown Voltage:

7 V

Maximum Clamping Voltage:

20 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

5.3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SZESD8472MUT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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