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SZESD7104MUTAG

Onsemi

SZESD7104MUTAG by Onsemi

SZESD7104MUTAG by Onsemi is a transient suppression device with common anode configuration, 5 elements, and max reverse current of 1uA. It is used for protecting electronic circuits from voltage spikes in automotive and industrial applications. With a package style of small outline and operating temperature range from -55 to 125°C, it meets AEC-Q101 and IEC-61000-4-2 standards.

Median Price

$1.190

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 540 parts In-Stock

1+ parts

$1.190

100+ parts

$0.482

1k+ parts

$0.338

10k+ parts

$0.292

540

$1.190

$0.482

$0.338

$0.292

DigiKey

USA . 2,993 parts In-Stock

1+ parts

$1.200

100+ parts

$0.492

1k+ parts

$0.345

10k+ parts

-

2,993

$1.200

$0.492

$0.345

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Verical

USA . 33,000 parts In-Stock

1+ parts

-

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$0.233

33,000

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$0.233

Flip Electronics (Authorized)

USA . 6,000 parts In-Stock

1+ parts

-

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6,000

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Distributors (In-Stock)

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Digiode

USA . 2,007 parts In-Stock

1+ parts

$0.656

100+ parts

-

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2,007

$0.656

-

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Flip Electronics

USA . 57,000 parts In-Stock

1+ parts

-

100+ parts

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57,000

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Chip Stock

USA . 28,000 parts In-Stock

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28,000

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Vyrian

USA . 6,259 parts In-Stock

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6,259

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Nova Conductors

Japan . 46 parts In-Stock

1+ parts

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46

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.014

100+ parts

$0.014

1k+ parts

$0.014

10k+ parts

-

20

$0.014

$0.014

$0.014

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Aztec Data Supply Inc.

USA . 507 parts In-Stock

1+ parts

$0.150

100+ parts

-

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507

$0.150

-

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Corohmni

South Africa . 438 parts In-Stock

1+ parts

$0.234

100+ parts

-

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438

$0.234

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Semicontronic

India . 6,126 parts In-Stock

1+ parts

$0.590

100+ parts

$0.575

1k+ parts

$0.572

10k+ parts

-

6,126

$0.590

$0.575

$0.572

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Ampacity Inc.

Singapore . 6,057 parts In-Stock

1+ parts

$0.590

100+ parts

-

1k+ parts

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6,057

$0.590

-

-

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Corphita

USA . 554 parts In-Stock

1+ parts

$0.621

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554

$0.621

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Perfect Parts

USA . 11,377 parts In-Stock

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11,377

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Problanco Electronics

Mexico . 6,490 parts In-Stock

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6,490

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TANS Electronics

Latvia . 3,253 parts In-Stock

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3,253

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Kulean Microsystems

USA . 2,020 parts In-Stock

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2,020

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Continental Prestige Electronics

USA . 1,542 parts In-Stock

1+ parts

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1,542

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SupplyDigital Components

Austria . 1,272 parts In-Stock

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1,272

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GreenTree Electronics

Israel . 1,000 parts In-Stock

1+ parts

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1,000

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Argo Parts USA

USA . 441 parts In-Stock

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441

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UHIMA Technologies

Türkiye . 237 parts In-Stock

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237

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Bastille Electronics

Australia . 89 parts In-Stock

1+ parts

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89

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Overview

Looking for reliable transient suppression devices to protect your electronics? Look no further than the SZESD7104MUTAG by Onsemi. With a reputable manufacturer like Onsemi, you can trust in the quality and durability of this product. Ideal for a variety of applications, these devices offer peace of mind by effectively suppressing voltage spikes and protecting your valuable equipment. Don't compromise on protection - choose the SZESD7104MUTAG for unmatched value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent durability and protection against environmental factors, making it a reliable choice for transient suppression devices.

Config: COMMON ANODE, 5 ELEMENTS

With 5 elements in common anode configuration, this device offers efficient suppression of transient voltage spikes, ensuring reliable circuit protection.

Surface Mount: YES

Being surface mountable allows for easy and space-saving installation on circuit boards, making it ideal for compact electronic devices.

Maximum Reverse Current: 1 uA

The low reverse current of 1 uA ensures minimal power loss and better efficiency in protecting against voltage transients.

Package Shape: RECTANGULAR

The rectangular shape of the package offers easy integration into various circuit designs, contributing to the versatility of this transient suppression device.

No. of Terminals: 10

With 10 terminals, this device provides ample connectivity options for versatile application in different circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this device compact and space-efficient, ideal for applications where board space is limited.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this device is suitable for use in a wide range of operating conditions without compromising performance.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C ensures reliable performance even in extreme cold environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance, enhancing the longevity and reliability of the device.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit board layout and wiring configurations, making it easier to incorporate into different designs.

Minimum Breakdown Voltage: 5.5 V

The minimum breakdown voltage of 5.5 V ensures effective suppression of voltage spikes above this threshold, safeguarding connected components.

Maximum Time At Peak Reflow Temperature (s): 30

This device can withstand a maximum time of 30 seconds at peak reflow temperature, ensuring proper soldering without compromising performance.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this device can endure high-temperature soldering processes, making it suitable for automated assembly.

Reference Standard: AEC-Q101, IEC-61000-4-2

Compliant with industry standards such as AEC-Q101 and IEC-61000-4-2, this device meets stringent quality and performance requirements for reliable transient suppression.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This device features Trans Voltage Suppressor diodes, which are specifically designed for fast response and efficient suppression of voltage transients.

Technology: AVALANCHE

Utilizing avalanche technology, this device offers rapid response to transient events, providing effective protection against voltage spikes.

Terminal Form: NO LEAD

The no-lead terminal form simplifies installation and ensures a secure connection, reducing the risk of solder joint failures.

No. of Elements: 5

With 5 elements, this device can efficiently suppress transient voltage spikes across multiple lines, offering comprehensive circuit protection.

Maximum Repetitive Peak Reverse Voltage: 5 V

The high maximum repetitive peak reverse voltage of 5 V ensures robust protection against voltage transients in various applications.

Polarity: UNIDIRECTIONAL

Featuring unidirectional polarity, this device is optimized for suppressing transient voltage spikes in a specific direction, enhancing its effectiveness in circuit protection.

Maximum Clamping Voltage: 19.5 V

The maximum clamping voltage of 19.5 V limits the voltage spikes to a safe level, preventing damage to sensitive components in the circuit.

Diode Element Material: SILICON

Constructed with silicon diode elements, this device offers reliable performance and high durability, ensuring long-term protection against transient events.

Technical Specifications

Transient Suppression Devices SZESD7104MUTAG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Minimum Breakdown Voltage:

5.5 V

Maximum Clamping Voltage:

19.5 V

Config:

COMMON ANODE, 5 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-N10

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

5

No. of Terminals:

10

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101, IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

5 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZESD7104MUTAG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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