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SZESD7C3.3DT5G

Onsemi

SZESD7C3.3DT5G by Onsemi

SZESD7C3.3DT5G by Onsemi is a Transient Suppression Device with 2 ELEMENTS in COMMON ANODE config. It has a Max Reverse Current of 1uA and Reverse Test Voltage of 3.3V, making it ideal for protecting circuits from voltage spikes in automotive applications compliant with AEC-Q101 standards.

Median Price

$0.102

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 45 parts In-Stock

1+ parts

$0.102

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45

$0.102

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Chip Stock

USA . 49,000 parts In-Stock

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49,000

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Digiode

USA . 1,697 parts In-Stock

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1,697

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Vyrian

USA . 673 parts In-Stock

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673

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,169 parts In-Stock

1+ parts

$0.010

100+ parts

$0.010

1k+ parts

$0.010

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-

1,169

$0.010

$0.010

$0.010

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Aztec Data Supply Inc.

USA . 360 parts In-Stock

1+ parts

$0.090

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360

$0.090

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Corohmni

South Africa . 440 parts In-Stock

1+ parts

$0.100

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440

$0.100

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Continental Prestige Electronics

USA . 699 parts In-Stock

1+ parts

$0.102

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$0.100

699

$0.102

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$0.100

Argo Parts USA

USA . 651 parts In-Stock

1+ parts

$0.102

100+ parts

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$0.099

651

$0.102

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$0.099

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.102

100+ parts

-

1k+ parts

$0.097

10k+ parts

$0.095

100

$0.102

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$0.097

$0.095

Component Stockers USA

USA . 75,980 parts In-Stock

1+ parts

$0.830

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75,980

$0.830

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Ampacity Inc.

Singapore . 1,047 parts In-Stock

1+ parts

$1.010

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1,047

$1.010

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AZTECH Wire

Italy . 739 parts In-Stock

1+ parts

$16.376

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739

$16.376

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Kulean Microsystems

USA . 7,277 parts In-Stock

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7,277

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Problanco Electronics

Mexico . 7,108 parts In-Stock

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7,108

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TANS Electronics

Latvia . 5,665 parts In-Stock

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5,665

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SupplyDigital Components

Austria . 5,577 parts In-Stock

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5,577

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Corphita

USA . 899 parts In-Stock

1+ parts

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899

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UHIMA Technologies

Türkiye . 116 parts In-Stock

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116

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Overview

Experience superior transient suppression with the SZESD7C3.3DT5G by Onsemi. Crafted with precision and reliability, this device offers unmatched protection for your electronics. Ideal for a wide range of applications, from automotive to industrial settings, this transient suppression device ensures optimal performance and longevity for your devices. Trust in Onsemi's reputation for quality and innovation, and elevate your products with the SZESD7C3.3DT5G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to environmental factors, making the product suitable for various applications.

Config: COMMON ANODE, 2 ELEMENTS

Common anode configuration with 2 elements allows for effective transient suppression and protection against voltage spikes.

Surface Mount: YES

Surface mount capability enables easy and efficient installation on circuit boards, saving space and simplifying assembly.

Maximum Reverse Current: 1 uA

Low reverse current ensures minimal power loss and efficient operation of the device.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy integration into various electronic systems and designs.

Reverse Test Voltage: 3.3 V

High reverse test voltage provides reliable protection against reverse voltage conditions.

No. of Terminals: 3

Having 3 terminals allows for secure and stable connection to the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space in compact electronic devices and systems.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stability and performance even in challenging environments.

Minimum Operating Temperature: -55 °C

Wide operating temperature range makes the device suitable for use in extreme cold conditions.

Terminal Position: DUAL

Dual terminal position provides flexibility in mounting and connectivity options.

Maximum Power Dissipation: 0.24 W

Efficient power dissipation capability protects the device from overheating and ensures long-term reliability.

Minimum Breakdown Voltage: 5 V

High minimum breakdown voltage offers robust protection against voltage surges and spikes.

Reference Standard: AEC-Q101, IEC-61000-4-2

Compliance with industry standards ensures quality, reliability, and compatibility with various electronic systems.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type provides effective suppression of transient voltage spikes, protecting sensitive electronic components.

Maximum Forward Voltage (VF): 1.1 V

Low maximum forward voltage ensures minimal voltage drop across the device, maintaining efficiency in operation.

Technology: AVALANCHE

Avalanche technology enables rapid response to voltage spikes and surges, enhancing protection capabilities.

Terminal Form: FLAT

Flat terminal form ensures stable connection and secure mounting on circuit boards.

No. of Elements: 2

Having 2 elements enhances the transient suppression capability of the device, providing additional protection.

Maximum Repetitive Peak Reverse Voltage: 3.3 V

High maximum repetitive peak reverse voltage ensures reliable performance in repetitive voltage surge conditions.

Polarity: UNIDIRECTIONAL

Unidirectional polarity offers protection in a specific direction, safeguarding against voltage spikes effectively.

Diode Element Material: SILICON

Silicon diode element material provides durability, stability, and efficient transient suppression performance.

Technical Specifications

Transient Suppression Devices SZESD7C3.3DT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Minimum Breakdown Voltage:

5 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PDSO-F3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.24 W

Reference Standard:

AEC-Q101, IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SZESD7C3.3DT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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