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SZESD7351HT1G

Onsemi

SZESD7351HT1G by Onsemi

SZESD7351HT1G by Onsemi is a unidirectional avalanche diode with a 5V breakdown voltage and 10V clamping voltage. It is designed for transient suppression applications in automotive electronics, meeting AEC-Q101 and IEC-61000-4-5 standards. With a small outline package style and dual terminals, it operates b/w -55°C to 150°C.

Median Price

$0.093

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,135 parts In-Stock

1+ parts

$0.500

100+ parts

$0.194

1k+ parts

$0.129

10k+ parts

-

2,135

$0.500

$0.194

$0.129

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Arrow

USA . 318,000 parts In-Stock

1+ parts

-

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$0.093

318,000

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$0.093

Verical

USA . 318,000 parts In-Stock

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$0.093

318,000

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$0.093

Farnell

UK . 143,200 parts In-Stock

1+ parts

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$0.067

143,200

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$0.067

Flip Electronics (Authorized)

USA . 75,000 parts In-Stock

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75,000

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Rochester

USA . 54,895 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

54,895

-

$0.092

$0.077

$0.068

EBV Elektronik

Germany . 6,000 parts In-Stock

1+ parts

-

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6,000

-

-

-

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Element14

Singapore . 1,890 parts In-Stock

1+ parts

-

100+ parts

$0.143

1k+ parts

$0.124

10k+ parts

$0.122

1,890

-

$0.143

$0.124

$0.122

Chip1Stop

Japan . 225 parts In-Stock

1+ parts

-

100+ parts

$0.065

1k+ parts

$0.065

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225

-

$0.065

$0.065

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 869 parts In-Stock

1+ parts

$0.071

100+ parts

-

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869

$0.071

-

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TME

Poland . 2,500 parts In-Stock

1+ parts

$0.280

100+ parts

$0.149

1k+ parts

$0.113

10k+ parts

$0.095

2,500

$0.280

$0.149

$0.113

$0.095

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.355

100+ parts

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100

$0.355

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Flip Electronics

USA . 75,000 parts In-Stock

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75,000

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Chip Stock

USA . 68,000 parts In-Stock

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68,000

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Vyrian

USA . 29,171 parts In-Stock

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29,171

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IBS Electronics

USA . 12,000 parts In-Stock

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$0.151

10k+ parts

$0.106

12,000

-

-

$0.151

$0.106

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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$0.347

6,000

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$0.347

Prism Electronics

USA . 9 parts In-Stock

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9

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 31,485 parts In-Stock

1+ parts

$0.044

100+ parts

-

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31,485

$0.044

-

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Semicontronic

India . 30,281 parts In-Stock

1+ parts

$0.044

100+ parts

$0.043

1k+ parts

$0.043

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30,281

$0.044

$0.043

$0.043

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.065

100+ parts

$0.062

1k+ parts

$0.062

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350

$0.065

$0.062

$0.062

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Corohmni

South Africa . 284 parts In-Stock

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$0.065

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284

$0.065

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Corphita

USA . 1,933 parts In-Stock

1+ parts

$0.068

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1,933

$0.068

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Argo Parts USA

USA . 2,391 parts In-Stock

1+ parts

$0.112

100+ parts

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$0.108

2,391

$0.112

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$0.108

Aztec Data Supply Inc.

USA . 1,493 parts In-Stock

1+ parts

$0.150

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1,493

$0.150

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Continental Prestige Electronics

USA . 257,200 parts In-Stock

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$0.091

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257,200

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$0.091

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Lixinc

USA . 15,579 parts In-Stock

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15,579

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SupplyDigital Components

Austria . 6,562 parts In-Stock

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6,562

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Problanco Electronics

Mexico . 3,096 parts In-Stock

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3,096

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A-Z Elektronik GmbH

Germany . 2,904 parts In-Stock

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2,904

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RC Electronics

USA . 2,700 parts In-Stock

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2,700

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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$0.348

1k+ parts

$0.337

10k+ parts

$0.330

2,000

-

$0.348

$0.337

$0.330

Kulean Microsystems

USA . 756 parts In-Stock

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756

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TANS Electronics

Latvia . 663 parts In-Stock

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663

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UHIMA Technologies

Türkiye . 73 parts In-Stock

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73

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Overview

Enhance your electronic devices with the SZESD7351HT1G by Onsemi, a top-tier manufacturer known for its quality and reliability. As a leading Transient Suppression Device, this product offers unparalleled protection against voltage spikes and surges, ensuring the longevity of your equipment. Its advanced technology and superior design make it ideal for a wide range of applications. Trust Onsemi to provide you with the best-in-class solutions for all your transient suppression needs. Experience peace of mind and uninterrupted performance with the SZESD7351HT1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making it a reliable choice for transient suppression devices.

Config: SINGLE

Having a single configuration simplifies installation and maintenance, making this product user-friendly.

Surface Mount: YES

The ability to surface mount allows for easy integration into circuit boards, saving space and improving efficiency.

Nominal Breakdown Voltage: 5 V

With a low nominal breakdown voltage, this device can effectively suppress transient voltage spikes within safe limits.

Package Shape: RECTANGULAR

The rectangular shape offers versatility in placement and mounting options, accommodating different design requirements.

No. of Terminals: 2

Having two terminals ensures secure connections and enhances the device's overall stability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space while maintaining high performance, ideal for compact applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this device can withstand harsh conditions and extended use.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows for reliable performance even in extreme cold environments.

Terminal Finish: MATTE TIN

The matte tin finish provides corrosion resistance and ensures optimal electrical conductivity.

Terminal Position: DUAL

Dual terminal positions offer flexibility in installation and connection, accommodating various circuit designs.

Maximum Power Dissipation: 0.15 W

This device can effectively dissipate power to protect connected components from damage during transient voltage events.

Minimum Breakdown Voltage: 5 V

The minimum breakdown voltage ensures reliable protection against voltage spikes, safeguarding sensitive electronics.

Maximum Time At Peak Reflow Temperature (s): 30

This device can withstand peak reflow temperatures for a set duration, ensuring proper soldering and installation.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature tolerance, this device can endure soldering processes without compromising performance.

Reference Standard: AEC-Q101; IEC-61000-4-5

Compliant with industry standards, this product meets quality and reliability requirements for diverse applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The diode type ensures efficient voltage suppression, protecting connected devices from transient spikes.

Technology: AVALANCHE

The avalanche technology offers fast and effective transient voltage suppression, enhancing overall system protection.

Terminal Form: GULL WING

The gull-wing terminal form simplifies installation and ensures secure connections in various circuit configurations.

Maximum Repetitive Peak Reverse Voltage: 3.3 V

With a low maximum repetitive peak reverse voltage, this device can effectively suppress transient voltages in low-power applications.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures effective suppression of voltage spikes in a single direction, maintaining system integrity.

Maximum Clamping Voltage: 10 V

The maximum clamping voltage limits peak voltages to a safe level, protecting downstream components from damage.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures high-performance transient suppression with excellent reliability.

Technical Specifications

Transient Suppression Devices SZESD7351HT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE, ULTRA LOW CAPACITANCE

Minimum Breakdown Voltage:

5 V

Nominal Breakdown Voltage:

5 V

Maximum Clamping Voltage:

10 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.15 W

Reference Standard:

AEC-Q101; IEC-61000-4-5

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZESD7351HT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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