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NZL6V8AXV3T3G

Onsemi

NZL6V8AXV3T3G by Onsemi

NZL6V8AXV3T3G by Onsemi is a Zener diode with 6.8V nominal reference voltage and 7.14V max breakdown voltage. It has a common anode configuration, 2 elements, and works at a max operating temperature of 150 °C. Ideal for transient suppression in electronic circuits requiring protection against voltage spikes.

Median Price

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Lifecycle Status

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3

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1k+

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Chip Stock

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AZTECH Wire

Italy . 460 parts In-Stock

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Kepictronics

USA . 51,360 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 4,817 parts In-Stock

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TANS Electronics

Latvia . 3,021 parts In-Stock

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Problanco Electronics

Mexico . 2,059 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 879 parts In-Stock

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Overview

Onsemi's NZL6V8AXV3T3G transient suppression device offers reliable protection against voltage spikes, ensuring the longevity and performance of your electronic devices. Manufactured by Onsemi, a trusted name in the industry known for their high-quality products, this common anode, 2-element device is designed for various applications where overvoltage protection is crucial. With a maximum breakdown voltage of 7.14V and a nominal reference voltage of 6.8V, this Zener diode technology provides customers with peace of mind knowing their equipment is safeguarded. Trust Onsemi for superior quality and performance in transient suppression devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the device, ensuring a longer lifespan.

Working Test Current: 5 mA

Allows for efficient operation at low current levels, making it suitable for a wide range of applications.

Surface Mount: YES

Easy to install and saves space on the circuit board, making it convenient for compact designs.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring reliability in various environments.

Maximum Breakdown Voltage: 7.14 V

Offers overvoltage protection by limiting the voltage to a safe level, preventing damage to connected components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Efficiently suppresses voltage transients and protects sensitive electronic devices.

Technical Specifications

Transient Suppression Devices NZL6V8AXV3T3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.14 V

Minimum Breakdown Voltage:

6.46 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Maximum Dynamic Impedance:

15 ohm

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.24 W

Qualification:

Not Qualified

Nominal Reference Voltage:

6.8 V

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

NZL6V8AXV3T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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